BB112
Abstract: am variable capacitance diode 8b112 NA 440
Text: b3E T> m - bbSB^iM D07SSÔM S3S « S I C 3 NAPC/PHILIPS SEMICOND BB112 - SILICON PLANAR VARIABLE CAPACITANCE DIODE T h e B B 1 12 is a single 9 V variable capacitance diode in a plastic encapsulation fo r applicatio n in tu n in g circuits in a.m . receivers. T h e diodes are supplied in m atched sets o f three items.
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D07SSÃ
BB112
BB112
OD-69
am variable capacitance diode
8b112
NA 440
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1N5722
Abstract: TIL604 til24 TIL23 1N5724 1N5726 D974 Phototransistors 1N5722 1N5725 00191
Text: TEXAS INSTR OPTO 25E D • a ci b ] i 7 2 t i D07SS44 5 1N5722 THRU 1N572S N-P-N PLANAR SILICON PHOTOTRANSiSTORS D 9 74 , M A R C H 1 9 7 2 - R E V IS E D A P R IL T9 8 i
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G07SS44
1N5722
1N572S
1972-REVISED
TIL601
TIL604
TIL604
til24
TIL23
1N5724
1N5726
D974
Phototransistors 1N5722
1N5725
00191
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cimr100
Abstract: No abstract text available
Text: LM3080 SflE » £3 National ÆM Semiconductor LS011E4 D07SSb3 m WÊHSŒ NATL SEriICOND LINEAR LM3080 Operational Transconductance Amplifier General Description Features The LM3080 is a programmable transconductance block in tended to fulfill a wide variety of variable gain applications.
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LM3080
LS011E4
D07SSb3
LM3080
cimr100
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3l4 diode
Abstract: No abstract text available
Text: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STD3N25
O-251)
O-252)
O-251
O-252
0068772-B
3l4 diode
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lv14
Abstract: 74lv140 74LV14 74LV14DB 74LV14N 74LV14D 74LV14PW philips pit
Text: Philips Semiconductors Product Specification Hex inverting Schmitt-trigger FEATURES • • • • Optimized fo r Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between Vcc = 2.7 V and Vcc = 3.6 V Typical VOLP output ground bounce < 0.8 V at Vcc = 3.3 V,
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74LV14
74LV14
74HC/HCT14.
711062b
lv14
74lv140
74LV14DB
74LV14N
74LV14D
74LV14PW
philips pit
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Untitled
Abstract: No abstract text available
Text: / T ^ 7 T S G S -T H O M S O N / IM Iim ö [g [llg ( g iM M [ l( g g T D E 1 8 9 7 R T D E 1 8 9 8 R 0.5AHIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA . • . ■ . ■ ■ . ■ ■ ■ 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE
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TDE1897R/TDE1898R
Techn15
0D7SS77
TDE1897R
TDE1898R
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74LVC544
Abstract: 74LVC544D 74LVC544DB 74LVC544PW 75542
Text: Philips Semiconductors Product Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • • • • • • 74LVC544 QUICK REFERENCE DATA GND = 0 V; T^nb = 25 °C; t, = t, < 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V
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74LVC544
74LVC640
74LVC533
74LVC544
711Dfi2t.
74LVC544D
74LVC544DB
74LVC544PW
75542
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LM3900
Abstract: LM3301N power amplifier circuit diagram with ic lm3900 an lm3900 lm2900
Text: bSDllSM Ü07SS4S T73 « N S C 2 LM2900/LM3900/LM3301 SflE D NATL SEMICOND LINEAR gg National Semiconductor 'T - 'T \ - I ° LM2900/LM3900/LM3301 Quad Amplifiers G eneral Description Features The LM2900 series consists of four independent, dual input, Internally compensated amplifiers which were designed
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LM2900/LM3900/LM3301
07SS4S
LM2900
LM2900/LM3900/LM3301
TL/H/7936-46
b501124
D0755b0
LM2900/
LM3900/LM3301
TL/H/7936--
LM3900
LM3301N
power amplifier circuit diagram with ic lm3900
an lm3900
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74LVC652
Abstract: 74LVC652D 74LVC652DB 74LVC652PW
Text: Philips Semiconductors Product Specification O ctal transceiver/reg ister w ith dual enable; 3-state FEATURES • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Flow-through pin-out architecture Inputs accept voltages upto
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74LVC652
74LVC652
711062b
74LVC652D
74LVC652DB
74LVC652PW
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