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    CY7C1170V18 Search Results

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    CY7C1170V18 Price and Stock

    Rochester Electronics LLC CY7C1170V18-400BZXC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1170V18-400BZXC Tray 443 8
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    Infineon Technologies AG CY7C1170V18-400BZC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1170V18-400BZC Tray 136
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    Rochester Electronics LLC CY7C1170V18-400BZC

    IC SRAM 18MBIT PARALLEL 165FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1170V18-400BZC Tray 8
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    Infineon Technologies AG CY7C1170V18-400BZXC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    Cypress Semiconductor CY7C1170V18-400BZC

    DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 '
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    Rochester Electronics CY7C1170V18-400BZC 1,150 1
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    Flip Electronics CY7C1170V18-400BZC 4,776
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    CY7C1170V18 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1170V18 Cypress Semiconductor 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Original PDF
    CY7C1170V18-400BZC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 400MHZ 165FBGA Original PDF
    CY7C1170V18-400BZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 400MHZ 165FBGA Original PDF

    CY7C1170V18 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz to 400 MHz clock for high bandwidth


    Original
    PDF CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit CY7C1166V18, CY7C1177V18, CY7C1168V18, CY7C1170V18 CY7C1166V18)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1168V18 CY7C1170V18 PRELIMINARY 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • • • • 18-Mbit density (1M x 18, 512K x 36) 300 MHz to 400 MHz clock for high bandwidth 2-Word burst for reducing address bus frequency


    Original
    PDF CY7C1168V18 CY7C1170V18 18-Mbit 165-ball

    CY7C1166V18

    Abstract: CY7C1168V18 CY7C1170V18 CY7C1177V18
    Text: CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz to 400 MHz clock for high bandwidth


    Original
    PDF CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 18-Mbit CY7C1177V18, CY7C1170V18 CY7C1166V18 CY7C1168V18 CY7C1177V18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1177V18 CY7C1168V18 CY7C1170V18 PRELIMINARY 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit density (2M x 9, 1M x 18, 512K x 36) • 300 MHz to 400 MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency


    Original
    PDF CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit CY7C1177V18/CY7C1168V18/CY7C1170V18

    CY7C1166V18

    Abstract: CY7C1168V18 CY7C1170V18 CY7C1177V18
    Text: CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz to 400 MHz clock for high bandwidth


    Original
    PDF CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit CY7C1166V18 CY7C1168V18 CY7C1170V18 CY7C1177V18

    3M Touch Systems

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 001-06620 Spec Title: CY7C1166V18/CY7C1177V18/CY7C1168V18/ CY7C1170V18, 18-MBIT DDR-II+ SRAM 2-WORD BURST ARCHITECTURE 2.5 CYCLE READ LATENCY Sunset Owner: Jayasree Nayar (NJY) Replaced by: None CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18


    Original
    PDF CY7C1166V18/CY7C1177V18/CY7C1168V18/ CY7C1170V18, 18-MBIT CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 CY7C1177V18, 3M Touch Systems