CY62136VLL-70ZI

Abstract: CY62136V CY62136V18 CY62136VLL-70BAI TE-05
Contextual Info: CY62136V MoBL CY62136V18 MoBL2™ CYPRESS 1 2 8 K x Features S ta tic R A M put/output pins l/O 0 through l/O-ip; are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis­ abled (OE HIGH), BHE and BLE ^ r e disabled (BHE, BLE

CY62136V

Abstract: CY62136V18
Contextual Info: CY62136V MoBL CY62136V18 MoBL2™ 128K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

CY62135V18

Abstract: CY7C1329 8355F
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

2M X 32 Bits 72-Pin Flash SO-DIMM

Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
Contextual Info: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194