CY62136VLL-70ZXI

Abstract: CY62136V CY62136VLL
Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not

CY62136VLL

Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

Contextual Info: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C • High speed: 55 ns and 70 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features

Contextual Info: CY62136V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected

CY62136VN

Contextual Info: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when

fbga 12 x 12 thermal resistance

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05087 Spec Title: CY62136V MOBL R 2-MBIT (128K X 16) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62136V MoBL 2-Mbit (128K x 16) Static RAM This is ideal for providing More Battery Life (MoBL®) in

CY62136V

Abstract: CY62136VLL-55ZI
Contextual Info: 1 CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62136V

Abstract: CY62136VLL-55ZI BA48 CY62136VLL-70ZI
Contextual Info: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

CY62136VN

Contextual Info: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when

Contextual Info: CY62136FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136V, CY62136CV30/CV33, CY62136EV30 • Ultra-low standby power — Typical standby current: 0.5 µA

CY62136VLL-70ZI

Abstract: CY62136V CY62136V18 CY62136VLL-70BAI TE-05
Contextual Info: CY62136V MoBL CY62136V18 MoBL2™ CYPRESS 1 2 8 K x Features S ta tic R A M put/output pins l/O 0 through l/O-ip; are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis­ abled (OE HIGH), BHE and BLE ^ r e disabled (BHE, BLE

AN1064

Abstract: CY62136VN
Contextual Info: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected

CY62137V

Abstract: CY62138V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor

Contextual Info: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

Contextual Info: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description [1] Features • Very high speed: 45 ns • Temperature ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62136V, CY62136CV30/CV33, and

CY62136V

Abstract: CY62136V18
Contextual Info: CY62136V MoBL CY62136V18 MoBL2™ 128K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

CY62136V

Abstract: CY62136VLL-55ZI CY62136
Contextual Info: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62136V

Abstract: CY62136V-70BAI CY62136V-70ZI
Contextual Info: CYPRESS PRELIMINARY CY62136V MoBL 12 8 K x Features 16 S ta tic R A M disabled B H E , BLE HIG H , o r during a w rite operation (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w ac tiv e, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fea tu res

CY62136V

Abstract: CY62136CV30
Contextual Info: 36CV30 CY62136CV30 MoBL 2M 128K x 16 Static RAM Features • • • • • • • • • High Speed: 55 ns and 70 ns availability Voltage range: 2.7V–3.3V Pin Compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz

Contextual Info: CYPRESS PRELIMINARY CY62136V MoBL 1 2 8 K x 1 6 S ta tic R A M Features disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fe a tu re s

CY62136V

Abstract: CY62136VLL
Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not

CY62135V18

Abstract: CY7C1329 8355F
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.

CY62136V

Abstract: CY62136VLL
Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not