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    BC337 Price and Stock

    Rochester Electronics LLC BC337-40ZL1G

    TRANS NPN 45V 0.8A TO92
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    DigiKey BC337-40ZL1G Bulk 555,480 3,806
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    Rochester Electronics LLC BC33716TA

    TRANS NPN 45V 0.8A TO92-3
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    DigiKey BC33716TA Bulk 79,449 7,416
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    Rochester Electronics LLC BC33716BU

    SMALL SIGNAL BIPOLAR TRANSISTOR,
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    DigiKey BC33716BU Bulk 72,109 7,474
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    onsemi BC33725TA

    TRANS NPN 45V 0.8A TO92-3
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    DigiKey BC33725TA Cut Tape 23,995 1
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    BC33725TA Ammo Pack 22,000 2,000
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    Avnet Americas BC33725TA Bulk 15 Weeks, 2 Days 1
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    BC33725TA Ammo Pack 5
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    Mouser Electronics BC33725TA 20,267
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    Verical BC33725TA 25,038 212
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    BC33725TA 20,000 2,000
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    Arrow Electronics BC33725TA 222,000 10 Weeks 2,000
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    BC33725TA 25,038 36 Weeks 1
    • 1 $0.21
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    BC33725TA Cut Strips 11,656 10 Weeks 1
    • 1 $0.2177
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    Newark BC33725TA Cut Tape 5,250 1
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    BC33725TA Cut Tape 7 1
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    TME BC33725TA 2,432 1
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    Ameya Holding Limited BC33725TA 8,000
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    Avnet Asia BC33725TA 10 Weeks 18,000
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    Avnet Silica BC33725TA 18,000 11 Weeks 2,000
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    Chip1Stop BC33725TA Cut Tape 3,335
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    EBV Elektronik BC33725TA 12 Weeks 2,000
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    Master Electronics BC33725TA 20,000
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    New Advantage Corporation BC33725TA 26,000 1
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    Rochester Electronics LLC BC33725

    TRANS NPN 45V 0.8A TO92-3
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    DigiKey BC33725 Bulk 22,810 4,438
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    BC337 Datasheets (386)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC337 Diotec Si-Epitaxial PlanarTransistors Original PDF
    BC337 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    BC337 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC337 Fairchild Semiconductor Switching and Amplifier Applications Original PDF
    BC337 Fairchild Semiconductor NPN general purpose transistor Original PDF
    BC337 General Semiconductor General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin Original PDF
    BC337 General Semiconductor Small Signal Transistors (NPN) Original PDF
    BC337 Korea Electronics TRANS GP BJT NPN 45V 0.8A 3TO-92 Original PDF
    BC337 NXP Semiconductors BC337 - 45 V, 500 mA NPN general-purpose transistors - Complement: BC327 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 45 V Original PDF
    BC337 On Semiconductor Amplifier Transistors NPN Silicon Original PDF
    BC337 On Semiconductor Amplifier Transistor NPN Original PDF
    BC337 On Semiconductor Amplifier Transistor NPN Original PDF
    BC337 Philips Semiconductors NPN general purpose transistor Original PDF
    BC337 Philips Semiconductors Small-signal Transistors Original PDF
    BC337 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC337 Siemens NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Original PDF
    BC337 Siemens Cross Reference Guide 1998 Original PDF
    BC337 Sinyork Mini size of Discrete semiconductor elements Original PDF
    BC337 Various Russian Datasheets Transistor Original PDF
    BC337 Vishay Semiconductors Small Signal Transistors (NPN) Original PDF
    ...

    BC337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC


    Original
    PDF BC327, BC327A, BC328 BC337, BC337A, BC338 C-120

    BC337A

    Abstract: No abstract text available
    Text: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BC337A 800mA. BC337A

    BC307

    Abstract: BC327 BC328 BC338 BC327 W 75
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original
    PDF BC327/328 BC337/BC338 BC327 BC328 BC307 BC327 BC328 BC338 BC327 W 75

    equivalent for BC327

    Abstract: BC327 BC328 BC338 bc337 m 337a
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier


    Original
    PDF BC327/A BC328 BC337/A BC338 338Rev 290606D C-120 equivalent for BC327 BC327 bc337 m 337a

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 BC337-16 TN3019A

    bc337

    Abstract: equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER
    Text: SEMICONDUCTOR BC337 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC337 2. Marking 4 Item Marking Description Device Name BC337 BC337 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.


    Original
    PDF BC337 bc337 equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


    Original
    PDF BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25

    bc327

    Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
    Text: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC327-25 BC327-25 BC327-40 BC327-40 SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPES ARE BC337-25 AND BC337-40 RESPECTIVELY


    Original
    PDF BC327-25 BC327-40 BC337-25 BC337-40 bc327 BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25

    BC337 NPN transistor datasheet

    Abstract: bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 QW-R201-039 OF TRANSISTOR BC337
    Text: UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original
    PDF BC337/338 BC327/328 BC337 BC338 100mA 300mA 500mA, QW-R201-039 BC337 NPN transistor datasheet bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 OF TRANSISTOR BC337

    BC337

    Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES


    Original
    PDF M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING AND AMPLIFIER APPLICATIONS •Suitable for AF-Driver stages and low power output stages ·Complement to BC337 ABSOLUTE MAXIMUM RATINGS TO-92 TA=25 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES -50 V Collector-Emitter Voltage VCEO


    Original
    PDF BC337 -10mA -100mA -30mA -500mA -50mA -300mA -10mA

    BC338-16

    Abstract: BC337 BC337 B 011
    Text: MCC Features • • • BC337-16/25/40 BC338-16/25/40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338)


    Original
    PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC338-16 BC337 B 011

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1


    Original
    PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR(NPN ) BC338,-16,-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.8 A Collector-base voltage


    Original
    PDF BC337ï BC338ï BC337 BC338 100MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original
    PDF BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038

    BC337L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G


    Original
    PDF BC337/BC338 BC327/328 BC337L/BC338L BC337G/BC338G BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K BC337L-x-T92-B BC337L-x-T92-K BC337L

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.


    Original
    PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337

    BC337-40

    Abstract: BC337-25 BC33740 BC337-40 t d bc33725 bc337 BC327-40 BC337-40 TO92 BC327-25 BC337-25-AP
    Text: BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN


    Original
    PDF BC337-25 BC337-40 BC337-25 BC337-25-AP BC337-40 BC337-40-AP BC33740 BC337-40 t d bc33725 bc337 BC327-40 BC337-40 TO92 BC327-25 BC337-25-AP

    Untitled

    Abstract: No abstract text available
    Text: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan
    PDF O-92F BC327, BC328 BC337, BC338 BC327 BC328 6251BW

    BC331

    Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
    Text: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.


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    PDF BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337 BC331 BC331 transistor transistor BC331 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327

    Untitled

    Abstract: No abstract text available
    Text: SynSEMi T O -92 Plastic Encapsulate Transistors SYMSEMI SEMICONDUCTOR BC3 37, -16, -25,-40 n p n transistor BC3 38, -16, -25,-40 FEATURES Power dissipation PCM : 0.625 W (Tamb=25 °C) Collector current Icm • 0.8 A Collector base voltage V cbo : BC337


    OCR Scan
    PDF BC337 BC338 270TYP 050TYP

    BC33B

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC337-25 BC337-40 BC337A Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min *c PD (W) (A) @Tc=25°c 50 45 5 0.625 0.5 50 60 45 60 5 5 0.625 0.5


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    PDF BC413B BC414 BC414B BC445A BC447 BC447A BC447B BC449 O-92-1 BC413 BC33B

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


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    PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    BC338

    Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
    Text: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.


    OCR Scan
    PDF DDE7530 BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337A BC337 BC327 BC337-16 DDE7532