BPV20F
Abstract: No abstract text available
Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV20F
BPV20F
950nm)
D-74025
20-May-99
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950NM
Abstract: BPV20F
Text: TELEFUNKEN Semiconductors BPV 20 F Silicon PIN Photodiode Description 94 8387 BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV20F
950nm)
D-74025
950NM
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BPV20F
Abstract: No abstract text available
Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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BPV20F
BPV20F
950nm)
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
D-74025
08-Mar-05
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BPV20F
Abstract: No abstract text available
Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV20F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
D-74025
20-Apr-04
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PDF
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BPV20F
Abstract: No abstract text available
Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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Original
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BPV20F
BPV20F
950nm)
D-74025
20-May-99
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters
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Original
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BPV20F
BPV20F
950nm)
D-74025
20-May-99
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV20F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
D-74025
26-Mar-04
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BPV20F
Abstract: No abstract text available
Text: BPV20F Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters l p=950nm .
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BPV20F
BPV20F
950nm)
D-74025
15-Jul-96
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BPV20F
Abstract: No abstract text available
Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .
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BPV20F
BPV20F
08-Apr-05
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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BPW46
Abstract: BPW34 osram
Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW46
BPW34 osram
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TSSP4038
Abstract: No abstract text available
Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2
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VMN-MS6520-1311
TSSP4038
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tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily
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emit4-9337-2920
VSA-SG0041-0512
tept5600 response time
Application NOTES TSAL4400
BPV11F
Photo interrupter application notes
SMD Transistor 1020
"Photo Interrupter" dual transistor
CNY70
cny70 datasheet
TEMT6000
TCND5000
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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BPW34 application note
Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be
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14-Apr-04
BPW34 application note
photodiode application luxmeter
APPLICATION NOTE BpW34
BPW34 osram
BPW20RF
BPW21R osram
phototransistor application lux meter
BPW41N
luxmeter detector
BPW21R
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BPW41 circuit application
Abstract: OSRAM IR emitter
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2002/95/EC.
2011/65/EU.
JS709A
BPW41 circuit application
OSRAM IR emitter
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Untitled
Abstract: No abstract text available
Text: Temic BPV20F S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV 20F is a high speed and high sensitive PIN photo diode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally m atched to G aA s or G aA s/G aA IA s IR em itters
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OCR Scan
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BPV20F
BPV20F
950nm
05mW/cm
15-Jul-96
15-Jul
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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