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    BFT12 Price and Stock

    PFLITSCH GmbH & Co KG BFT-12-12-12-BG

    T-CONNECTOR FOR CORRUGATED PIPES
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    DigiKey BFT-12-12-12-BG Bag 5
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    PFLITSCH GmbH & Co KG BFT-12-12-12-BK

    T-CONNECTOR FOR CORRUGATED PIPES
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    Siemens BFT12000B (ALTERNATE: BFT12000B)

    POWMOD BFT 2000A 1PH 3R 65KAIC ; BFT12000B | Siemens BFT12000B
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    RS BFT12000B (ALTERNATE: BFT12000B) Bulk 2 Weeks 1
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    Siemens BFT12000BU (ALTERNATE: BFT12000BU)

    POWMOD BFT 2000A 1PH 3R 100KAIC ; BFT12000BU | Siemens BFT12000BU
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    RS BFT12000BU (ALTERNATE: BFT12000BU) Bulk 2 Weeks 10
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    Siemens BFT12000B

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    Onlinecomponents.com BFT12000B
    • 1 $19307.75
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    BFT12 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFT12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT12 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFT12 Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BFT12 Siemens NPN SILICON RF BROADBAND TRANSISTOR Scan PDF
    BFT12 Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BFT120M5 Vishay Resistor: Carbon Film: 120M Original PDF
    BFT12M5 Vishay Resistor: Carbon Film: 12M Original PDF

    BFT12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFT-12

    Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
    Text: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for


    OCR Scan     		PDF BFT12 T0-50) Q62702-F390 BFT-12 Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131.D72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC558128BJ/BFT-12 D72-WORD TC558128BJ/BFT 576-bit SOJ32-P-4QO-1 38MAX 32-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


    OCR Scan     		PDF TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    Transistor BFT 44

    Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
    Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the


    OCR Scan     		PDF 23SbOS Q004701 Q62702-F390 Transistor BFT 44 transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047

    SOJ32-P-400-1

    Abstract: TC55V8128BJ
    Text: T O S H IB A TENTATIVE TC55V8128BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V8128BJ/BFT-10 072-WORD TC55V8128BJ/BFT SOJ32-P-4QO-1 32-P-400-0 SOJ32-P-400-1 TC55V8128BJ

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    SOJ44-P-400-1

    Abstract: TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT

    SOJ32-P-400-1

    Abstract: TC558128BJ
    Text: T O S H IB A TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC558128BJ/BFT-12 372-WORD TC558128BJ/BFT 576-bit SQJ32-P-400-1 38MAX 32-P-400-0 SOJ32-P-400-1 TC558128BJ

    f22e

    Abstract: Scans-0010547 din 867 BFT12 Q62702
    Text: B FT12 l\IPI\l-Silizium-HF-Planar-Transistor B F T 1 2 is t ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B3 DIN 41 867 äh n l.T O -50 für allgemeine Verwendung in Verstärkern bis in den GHz-Bereich, z .B . für Breitbandantennenverstärker hoher Ausgangsleistung und Linearität sowie für Os­


    OCR Scan     		PDF BFT12 Q62702â 140mA f22e Scans-0010547 din 867 BFT12 Q62702

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit SOJ32-P-400-1 32-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    TC558128BJ

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit SOJ32-P-400-1 32-P-400-0 67TYP TC558128BJ

    vhdl code for 8-bit BCD adder

    Abstract: No abstract text available
    Text: A dvance Inform ation, version 1.1 ‘v ' v ' : Crosspoint Solutions, Inc. C rosspoint has built the first field-program m able replacem ent for standard m ask-program m able gate arrays, the true F ield P rogram m able G ate A rray FPGA . System designers now have the flexibility and freedom to:


    OCR Scan     		PDF establis20 vhdl code for 8-bit BCD adder

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit TC558128BJ/BFTremain SOJ32-P-400-1 21-36MAX 32-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V328BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V328BJ/BFT is a 262,144-bit high-speed static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed and


    OCR Scan     		PDF TC55V328BJ/BFT-12 768-WORD TC55V328BJ/BFT 144-bit SOJ28-P-300-1 84MAX 28-P-0

    A526

    Abstract: No abstract text available
    Text: TO SH IB A TC55V328BJ/B FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V328BJ/BFT is a 262,144-bit high-speed static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed and


    OCR Scan     		PDF TC55V328BJ/B FT-12 768-WORD TC55V328BJ/BFT 144-bit SOJ28-P-300-1 TC55V328BJ/BFT-12 28-P-0 A526

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to


    OCR Scan     		PDF 023SbOS Q62702-F390

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V8128BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V8128BJ/BFT-10 072-WORD TC55V8128BJ/BFT 32-pfied SOJ32-P-400-1 21-36MAX