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    B631K Search Results

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    B631K Price and Stock

    Rochester Electronics LLC 2SB631KF

    PNP SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB631KF Bulk 1,110
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.27
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    OMRON Industrial Automation 3G3DV-B631K-BC01

    VARI FREQ DRIVE 344A 690V LOAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3G3DV-B631K-BC01 Box 1
    • 1 $30950.5
    • 10 $30950.5
    • 100 $30950.5
    • 1000 $30950.5
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    onsemi 2SB631KF

    2SB631 - 100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB631KF 9,098 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
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    SANYO Semiconductor Co Ltd 2SB631KF

    2SB631 - 100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB631KF 16,088 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
    • 10000 $0.221
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    OMRON Industrial Automation 3G3DVB631KBC01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 3G3DVB631KBC01
    • 1 $37652.2
    • 10 $37652.2
    • 100 $37652.2
    • 1000 $37652.2
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    Find more B631K price and stock on Findchips.com

    B631K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    B631K Guangdong Yue Jing High Technology PNP Silicon Transistor Original PDF

    B631K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B631K

    Abstract: kb631k k b631k KTB631K b631ky k b631k y
    Text: SEMICONDUCTOR B631K MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B631K Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name B631K B631K 3 hFE Grade Y O,Y,GR 4 Lot No. 816 98.06.23 Revision No :


    Original     		PDF KTB631K O-126 B631K B631K kb631k k b631k KTB631K b631ky k b631k y

    B631K

    Abstract: No abstract text available
    Text: B631K 广东省粤晶高科股份有限公司 —PNP silicon — •■主要用途：高压开关、功率放大等。 ■■绝对最大额定值（Ta＝25℃） 项 目 符 号 额定值 单 位 集电极—基极电压 VCBO -120 V 集电极—发射极电压


    Original     		PDF B631K -50mA -500mA -50VIE 01mAIE 01mAIC -500mAIB= B631K

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600

    D600K

    Abstract: 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600
    Text: 注文コード No. N 3 4 6 G 2SB631, 631K / 2SD600, 600K N346G 41400 半導体ニューズ No.346E（’ 91 大信号トランジスタ D.B.Vol.1 No.346F）とさしかえてください。 2SB631, 631K 2SD600, 600K 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


    Original     		PDF 2SB631, 2SD600, N346G 2SB631K, D600K B631K, D600K 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


    OCR Scan     		PDF K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan     		PDF EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan     		PDF EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


    OCR Scan     		PDF 1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895

    c2314

    Abstract: c3807 C3502 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127
    Text: S4PfVO X O — 1 2£> O :T0-126ML, *:T0-126LP, Unmarked :T0-126. \ \ Type T r a n s i s t o r s ♦¡D arlington V CEO I \ V C \ (mA) \ 18 2 0 2 5 3 5 4 5 5 0 7 0 6 0 8 0 10 0 12 0 16 0 A1404 A15380 C3598 <39530 200 A1723 C4271 C4660O A1402 C3596 A15360


    OCR Scan     		PDF T0-126ML T0-126LP, T0-126. A1352 A1380 A1406 A14780 A1540O C3416 C3502 c2314 c3807 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127