ATC800B0R5BT500XT Search Results

ATC800B0R5BT500XT Price and Stock

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Kyocera AVX Components 800B0R5BT500XT Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.5pf Tol .1pf Las Mkg
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	800B0R5BT500XT		443			1 $4.45 10 $3.42 100 $3.26 1000 $1.9 10000 $1.83	Buy Now
TTI	800B0R5BT500XT	Reel			500	1 - 10 - 100 - 1000 $1.88 10000 $1.78	Buy Now

ATC800B0R5BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
SEMICONDUCTOR J598 Abstract: j598 ATC800B0R8BT500XT ATC800B J739 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739	PDF
j598 Abstract: No abstract text available Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 j598	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3	PDF
SEMICONDUCTOR J598 Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT	PDF