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Microchip Technology Inc APT60GT60JRDQ3 IGBT 600V 105A 379W SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT60GT60JRDQ3	Tube			20	1 - 10 - 100 $31.5035 1000 $31.5035 10000 $31.5035	Buy Now
Newark	APT60GT60JRDQ3	Bulk			20	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NAC	APT60GT60JRDQ3	Tube			20	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT60GT60JRD FG, IGBT-COMBI, 600V, 60A, SOT-227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NAC	APT60GT60JRD	Tube			20	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	APT60GT60JRD				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microsemi Corporation APT60GT60JRD Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 20 V;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	APT60GT60JRD		339			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT60GT60JRD Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT60GT60JRD		Advanced Power Technology	IGBT, Power IGBT, VCG 600 V, VCE 600 V, IC 90 A		Original	PDF
APT60GT60JRD		Advanced Power Technology	Thunderbolt IGBT & FRED 600V 90A		Original	PDF
APT60GT60JRD		Advanced Power Technology	Thunderbolt IGBT		Original	PDF
APT60GT60JRDQ3		Microsemi	Insulated Gate Bipolar Transistor-NPT HIGH Speed		Original	PDF

APT60GT60JRD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT60DQ60 Abstract: APT60GT60JRDQ3 APT60M75L2LL Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast	Original	APT60GT60JRDQ3 100KHz E145592 APT60DQ60 APT60GT60JRDQ3 APT60M75L2LL	PDF
Untitled Abstract: No abstract text available Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast	Original	APT60GT60JRDQ3 100KHz E145592	PDF
60gt60 Abstract: No abstract text available Text: APT60GT60JRD 600V Thunderbolt IGBT 90A E E The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized"	Original	APT60GT60JRD 150KHz APT60GT60JRD 052-6260Rev 60gt60	PDF
60gt60 Abstract: APT60GT60JRD sot-227 weight Text: APT60GT60JRD 600V Thunderbolt IGBT 93A E E The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized"	Original	APT60GT60JRD 150KHz 60gt60 APT60GT60JRD sot-227 weight	PDF
RY 227 Tf 227 10A Abstract: pearson 411 RY 227 APT60GT60JRD diode 350v 60A Tf 227 ry 10A Text: APT60GT60JRD 600V Thunderbolt IGBT & FRED E E The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers	Original	APT60GT60JRD 150KHz APT60GF60JRD OT-227 RY 227 Tf 227 10A pearson 411 RY 227 APT60GT60JRD diode 350v 60A Tf 227 ry 10A	PDF
Untitled Abstract: No abstract text available Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast	Original	APT60GT60JRDQ3 100KHz E145592	PDF
APT60GT60JRD Abstract: No abstract text available Text: APT60GT60JRD 600V Thunderbolt IGBT 90A E E The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized"	Original	APT60GT60JRD 150KHz APT60GT60JRD	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series	PDF

APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF
ELS 496 Abstract: No abstract text available Text: APT60GT60JRD ADVANCED PO W ER Te c h n o l o g y 600V 90A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers	OCR Scan	APT60GT60JRD 150KHz APT60GF60JRD OT-227 ELS 496	PDF