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    Advanced Power Technology APT35GP120B2DF2

    INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components APT35GP120B2DF2 18
    • 1 $16.5
    • 10 $12.375
    • 100 $12.375
    • 1000 $12.375
    • 10000 $12.375
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    APT35GP120B2DF2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT35GP120B2DF2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT35GP120B2DF2 Unknown High Voltage, 1200V 96A, IGBT N-Type Original PDF

    APT35GP120B2DF2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7407

    Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS
    Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT35GP120B2DF2 IC 7407 IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS

    ic 7407

    Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F
    Text: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT35GP120B2DF2 ic 7407 7407 APT35GP120B2DF2 IC 7407 datasheet 228F

    35GP120

    Abstract: 35GP120B2DF2 35GP120B 35GP120B2
    Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT35GP120B2DF2 35GP120 35GP120B2DF2 35GP120B 35GP120B2

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF