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    AN6081

    Abstract: No abstract text available
    Text: Migration to 90 nm 5V Async SRAMs AN6081 Abstract This application note is to help users of Cypress 5V asynchronous SRAMs Fast Async and Micropower SRAMs product family migrate from existing technology to the latest 90 nm technology. Introduction Cypress started qualifying its state-of-the-art 90 nm technology asynchronous SRAMs in early 2006. These products,


    Original     		PDF AN6081 AN6081

    ispClock5406

    Abstract: AN6081 SG-710ECK ispClock5400 SG-71 ispCLOCK5406D
    Text: Driving SERDES Devices with the ispClock5400D Differential Clock Buffer October 2009 Application Note AN6081 Introduction In this application note we focus on how the ispClock 5406D and a low-cost CMOS oscillator can be utilized to drive the reference clock for SERDES-based applications. SERDES applications require accurate and low-jitter


    Original     		PDF ispClock5400D AN6081 ispClockTM5406D ispClock5406D 1-800-LATTICE ispClock5406 AN6081 SG-710ECK ispClock5400 SG-71

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features • Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D 32-pin 400-Mil CY7C1009D 300-Mil

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    Untitled

    Abstract: No abstract text available
    Text: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62138F CY62138V

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE


    Original     		PDF CY62146E I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011CV33-10BAJXET Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C1011CV33-10BAJXET Automotive Qualified Y Min. Operating Voltage V


    Original     		PDF CY7C1011CV33-10BAJXET AN6081 90-nm CY7C1011CV33-10BAJXET

    Untitled

    Abstract: No abstract text available
    Text: CY7C10212CV33-12BAXET Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C10212CV33-12BAXET Automotive Qualified Y Min. Operating Voltage V


    Original     		PDF CY7C10212CV33-12BAXET 10Last AN6081 90-nm PIN135200 CY7C10212CV33-12BAXET

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    Untitled

    Abstract: No abstract text available
    Text: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A


    Original     		PDF CY62157ESL 44-pin I/O15)

    81134A

    Abstract: an-596 hyperlynx 60810 AN608 Touchstone Semiconductor
    Text: AN 608: HST Jitter and BER Estimator Tool for Stratix IV GX and GT Devices July 2010 AN-608-1.0 The high-speed communication link design toolkit HST jitter and bit error rate (BER) estimator tool is a statistical behavior model-based simulation tool that estimates the


    Original     		PDF AN-608-1 81134A an-596 hyperlynx 60810 AN608 Touchstone Semiconductor

    HW-USBN-2A Schematic

    Abstract: D1N4448 smd diode 95e jtag cable lattice Schematic hw-dln-3c ispCLOCK5406D HW-USBN-2A AN6081 R17 SMA HW-usb smd 4n
    Text:  ispClock5400D Evaluation Board User’s Guide December 2009 Revision: EB50_01.1  ispClock5400D Evaluation Board User’s Guide Lattice Semiconductor Introduction Thank you for choosing the Lattice Semiconductor ispClock device family! This guide describes how to start using the ispClock5400D Evaluation Board, an easy-to-use platform for evaluating and designing with the ispClock5406D in-system-programmable differential clock distribution device. The evaluation board can be used stand-alone to review the performance and in-system programmability of the


    Original     		PDF ispClock5400D ispClock5406D EVQ-QXT03W OT-23 MMBT2369A OT-223 HW-USBN-2A Schematic D1N4448 smd diode 95e jtag cable lattice Schematic hw-dln-3c HW-USBN-2A AN6081 R17 SMA HW-usb smd 4n

    Untitled

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original     		PDF CY62167E 16-Mbit I/O15) 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C1049D 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable


    Original     		PDF CY7C1049D CY7C1049B

    cy7c1019d

    Abstract: No abstract text available
    Text: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description The CY7C1019D [1] is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW


    Original     		PDF CY7C1019D CY7C1019B cy7c1019d

    Untitled

    Abstract: No abstract text available
    Text: CY62136ESL MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62136ESL I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011CV33-10BAJXE Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C1011CV33-10BAJXE Automotive Qualified Y Min. Operating Voltage V


    Original     		PDF CY7C1011CV33-10BAJXE AN6081 90-nm CY7C1011CV33-10BAJXE

    Untitled

    Abstract: No abstract text available
    Text:  CY7C199D-25SXE Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C199D-25SXE Automotive Qualified Y Min. Operating Voltage V


    Original     		PDF CY7C199D-25SXE 100-BLY AN6081 90-nm CY7C199D-25SXE

    D1N4448

    Abstract: jtag cable lattice Schematic hw-dln-3c schematic ispDOWNLOAD Cable lattice hw-dln-3c HW-DLN-3C HW-USBN-2A Schematic HW-USBN-2A AN6081 circuit ispDOWNLOAD Cable lattice hw-dln-3c FzT649TA ispDOWNLOAD Cable lattice hw-dln-3c
    Text:  ispClock5400D Evaluation Board User’s Guide July 2010 Revision: EB50_01.2  ispClock5400D Evaluation Board User’s Guide Lattice Semiconductor Introduction Thank you for choosing the Lattice Semiconductor ispClock device family! This guide describes how to start using the ispClock5400D Evaluation Board, an easy-to-use platform for evaluating and designing with the ispClock5406D in-system-programmable differential clock distribution device. The evaluation board can be used stand-alone to review the performance and in-system programmability of the


    Original     		PDF ispClock5400D ispClock5406D EVQ-QXT03W OT-23 MMBT2369A OT-223 D1N4448 jtag cable lattice Schematic hw-dln-3c schematic ispDOWNLOAD Cable lattice hw-dln-3c HW-DLN-3C HW-USBN-2A Schematic HW-USBN-2A AN6081 circuit ispDOWNLOAD Cable lattice hw-dln-3c FzT649TA ispDOWNLOAD Cable lattice hw-dln-3c

    Untitled

    Abstract: No abstract text available
    Text: CY7C199D 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features Functional Description • Temperature range ❐ –40 °C to 85 °C The CY7C199D is a high performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is


    Original     		PDF CY7C199D 256-Kbit CY7C199D CY7C199C

    Untitled

    Abstract: No abstract text available
    Text: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features • Very high speed: 45 ns ❐ Wide voltage range: 4.5 V–5.5 V applications. The device also has an automatic power down feature that significantly reduces power consumption. Placing


    Original     		PDF CY62158E

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (I/O0


    Original     		PDF CY62126ESL I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157E MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are


    Original     		PDF CY62157E I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description The CY7C1019D [1] is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW


    Original     		PDF CY7C1019D CY7C1019B