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    GX32

    Abstract: No abstract text available
    Text: ^EDI EDI7F33IMC m gx32 ELECTRONIC L 6iJ&W5. INC 1Megx32 Flash Module Block Diagrams The EDI7F33IMC and EDI7F2331MC are orga­ nized as m e and two banks of 1 meg x 32 respec­ tively, The modules are based on AMDs AM29F08Q EDI7F33IMGBNC -1 Megx 8 Flash devicein TSOP packages which are


    OCR Scan     		PDF 1Megx32 EDI7F33IMGBNC EDI7F33IMC EDI7F33IMC EDI7F2331MC AM29F08Q 150ns 1Mcgx3280pr AM29F080 EDI7F233IMC90BNC GX32

    AM29F080

    Abstract: SA12 SA13 SA14 SA15 AM29F0808
    Text: PRELIM INARY a Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices d is t in c t iv e c h a r a c t e r is t ic s • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F080 40-pin 44-pin SA12 SA13 SA14 SA15 AM29F0808

    CHINA TV uoc

    Abstract: X886 Am29F08QB AM29F060
    Text: AM D3 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation —- Minimizes system level power requirements ■ Manufactured on 0.35 |jm process technology


    OCR Scan     		PDF Am29F080B Am29F080 -l276-803299 55M-6/98-0 21503D BQQ-57Q-G48 CHINA TV uoc X886 Am29F08QB AM29F060