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Catalog Datasheet	MFG & Type	PDF	Document Tags
9R800C Abstract: IPW90R800C3 JESD22 Text: IPW90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPW90R800C3 PG-TO247 9R800C 009-134-A O-247 PG-TO247-3 9R800C IPW90R800C3 JESD22
9R800C Abstract: IPP90R800C3 JESD22 Text: IPP90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPP90R800C3 PG-TO220 9R800C 9R800C IPP90R800C3 JESD22
9R800C Abstract: No abstract text available Text: IPP90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPP90R800C3 PG-TO220 9R800C 9R800C
f41 marking Abstract: No abstract text available Text: IPI90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPI90R800C3 PG-TO262 9R800C f41 marking
9R800C Abstract: IPA90R800C3 JESD22 D41 marking Text: IPA90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPA90R800C3 PG-TO220 9R800C 9R800C IPA90R800C3 JESD22 D41 marking
9R800C Abstract: IPI90R800C3 JESD22 Text: IPI90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPI90R800C3 PG-TO262 9R800C 9R800C IPI90R800C3 JESD22
9R800C Abstract: No abstract text available Text: IPA90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPA90R800C3 PG-TO220 9R800C 9R800C
9R800C Abstract: IPW90R800C3 JESD22 DD-50 D41 marking Text: IPW90R800C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.8 Ω Q g,typ 42 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	IPW90R800C3 PG-TO247 9R800C 9R800C IPW90R800C3 JESD22 DD-50 D41 marking