9R500C
Abstract: 9R500 IPW90R500C3 JESD22
Text: IPW90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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9r500c
Abstract: 9R500 IPP90R500C3 JESD22
Text: IPP90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP90R500C3
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9r500c
Abstract: No abstract text available
Text: IPP90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Abstract: No abstract text available
Text: IPW90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R500C3
PG-TO247
9R500C
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9R500C
Abstract: 9R500 IPA90R500C3 JESD22 f66a
Text: IPA90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA90R500C3
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9R500C
9R500C
9R500
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f66a
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9R500C
Abstract: 9r500 IPW90R500C3 JESD22
Text: IPW90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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9r500c
Abstract: 9R500
Text: IPI90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI90R500C3
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9R500
Abstract: 9r500c
Text: IPA90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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9R500C
Abstract: 9R500 IPI90R500C3 JESD22
Text: IPI90R500C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 0.5 Ω Q g,typ 68 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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