9R1K0c
Abstract: IPW90R1K0C3 JESD22 PG-TO247 F33A
Text: IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R1K0C3
PG-TO247
009-134-A
O-247
PG-TO247-3
O-247,
9R1K0c
IPW90R1K0C3
JESD22
PG-TO247
F33A
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9R1K0c
Abstract: IPA90R1K0C3 JESD22 d33 marking c32w
Text: IPA90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA90R1K0C3
PG-TO220
9R1K0c
IPA90R1K0C3
JESD22
d33 marking
c32w
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9R1K0c
Abstract: IPW90R1K0C3 JESD22
Text: IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW90R1K0C3
PG-TO247
9R1K0c
IPW90R1K0C3
JESD22
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9R1K0c
Abstract: G-624 IPP90R1K0C3 JESD22 D33A
Text: IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP90R1K0C3
PG-TO220
9R1K0c
G-624
IPP90R1K0C3
JESD22
D33A
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9R1K0c
Abstract: No abstract text available
Text: IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP90R1K0C3
PG-TO220
9R1K0c
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Untitled
Abstract: No abstract text available
Text: IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPW90R1K0C3
PG-TO247
009-134-A
O-247
PG-TO247-3
O-247,
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9R1K0c
Abstract: No abstract text available
Text: IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPI90R1K0C3
PG-TO262
9R1K0c
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9R1K0c
Abstract: IPI90R1K0C3 JESD22
Text: IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPI90R1K0C3
PG-TO262
9R1K0c
IPI90R1K0C3
JESD22
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