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    KEC KHB9D0N90NAUP

    N CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA KHB9D0N90NAUP 30
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    9d0n90n

    Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
    Text: SEMICONDUCTOR 9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90NA dI/dt200A/, 9d0n90n KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020

    KHB 9d0n90n

    Abstract: 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc
    Text: SEMICONDUCTOR 9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N90NA above25 0N90NA KHB 9d0n90n 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc