UE 40 F 6470

Abstract: pid u 13t
Contextual Info: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention

CXK5464AP-25L

Abstract: 51C98-20 51C98-25 CAT71C88-45 CAT71C88-55 CAT71C88-70 CXK5464AP-35L CXK5464AP-301 Hitachi Scans-001
Contextual Info: - 69 6 4 K CMOS x a -, m % tt * < :o TAAC max ns TC a C max (ns) TOE max (ns) TOH min (ns) > TOD max (ns) S t a t i c RAM y m tt TWP tin (ns) TDS win (ns) ( 1 6 3 8 4 x 4) n. TDH win (ns) TWD min (ns) TNR wax (ns) 2 2 P IN m V D D or V C C I DD :v: (mA)

pid u 13t

Contextual Info: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS

PD3024

Abstract: pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability 22-pin 0.300-inch DIP <99C164

Contextual Info: Am99Cl 6 4 /Am99Cl 65 16,384x4 STATIC R /W RANDOM-ACCESS MEMORY ADVANCE INFORMATION • • • • Fast access time - 99C164 - 35/45/5 5/70 ns maximum Am99C165 - 35 /45/5 5/70 ns maximum 1 6 K x4 organization Output Enable 5 control to alleviate bus contention

Contextual Info: ADV MICRO {MEMORY} 'it I 99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the 99C164 and Am99C165, commercial temperature grade. *

pid u 13t

Abstract: AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIM IN ARY D IS T IN C T IV E C H A R A C T E R IS T IC S Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability