6720005330
Abstract: No abstract text available
Text: I n t ro d u c t i o n — E l e c t ro n i c C i rc u i t P ro t e c t i o n E S X 1 0 - T Electronic circuit protection type ESX10-T is designed to ensure selective disconnection of 24VDC load systems. 24VDC power supplies, which are widely used in industry today, will shut down
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ESX10-T
24VDC
ESX10-T
0A/100A
20A/130A
6720005330
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9926 diode
Abstract: 9926 diode National Semiconductor 99268 F TTL family characteristics SMD codes databook 54ACT 74AC 74AC139 74ACT139 AC139
Text: 54AC 74AC139 54ACT 74ACT139 Dual 1-of-4 Decoder Demultiplexer General Description Features The ’AC ’ACT139 is a high-speed dual 1-of-4 decoder demultiplexer The device has two independent decoders each accepting two inputs and providing four mutually-exclusive active-LOW outputs Each decoder has an activeLOW Enable input which can be used as a data input for a
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74AC139
54ACT
74ACT139
ACT139
20-3A
9926 diode
9926 diode National Semiconductor
99268
F TTL family characteristics
SMD codes databook
74AC
74AC139
74ACT139
AC139
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOT-23 FEATURE z Advanced trench process technology z High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability
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OT-23
CJ9926
OT-23
150otherwise
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9926 transistor
Abstract: 9926 SO-8 code marking s20 TRANSISTOR AO9926 9926 diode
Text: Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO9926 uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in
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AO9926
AO9926
9926 transistor
9926 SO-8
code marking s20 TRANSISTOR
9926 diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOP8 FEATURE z z Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability
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CJ9926
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9926 mosfet
Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻
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FHK9926
OT-26
9926 mosfet
F 9926 MOSFET
FHK9926
sot 26 Dual N-Channel MOSFET
mosfet 9926
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2n3904 application
Abstract: overcharge protection circuit nimh overcharge protection circuit nimh 10 cell 9926 mosfet 9 VOLT HIGH POWER BATTERY 9926 transistor 9926 BATTERY AIC1801 2N3904 bth 100
Text: AN98-BM01EN May 1998 Battery Charging Protection Design Using AIC1801 Jacob Wu Abstract In recent years, the Li-ion battery is getting more and more popular in applications of rechargeable power systems. For cellular phones, one-cell Li-ion battery power system is most widely used. Although
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AN98-BM01EN
AIC1801
AIC1801
2n3904 application
overcharge protection circuit nimh
overcharge protection circuit nimh 10 cell
9926 mosfet
9 VOLT HIGH POWER BATTERY
9926 transistor
9926 BATTERY
2N3904
bth 100
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9926 mosfet
Abstract: SMG9926 F 9926 MOSFET mosfet vgs 5v 5a 9926 BATTERY power mosfet 5a 20v 9926S
Text: SMG9926 5A, 20V,RDS ON 30mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG9926 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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SMG9926
SC-59
SMG9926
01-Jun-2002
9926 mosfet
F 9926 MOSFET
mosfet vgs 5v 5a
9926 BATTERY
power mosfet 5a 20v
9926S
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9926N
Abstract: 9926 SO-8 9926 mosfet AF9926N mosfet 9926 MOSFET SO-8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: AF9926N N-Channel Enhancement Mode Power MOSFET Features General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,
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AF9926N
9926N
9926 SO-8
9926 mosfet
AF9926N
mosfet 9926
MOSFET SO-8
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability.
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LDN9926ET1G
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9926N
Abstract: 9926 mosfet VGS-12V AF9926N
Text: AF9926N N-Channel Enhancement Mode Power MOSFET Features General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,
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AF9926N
9926N
015x45
9926 mosfet
VGS-12V
AF9926N
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9926 mosfet
Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
Text: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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Si9926DY
9926 mosfet
OZ 9926
9926 BATTERY
9926 SO-8
F 9926 MOSFET
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IC OZ 9926
Abstract: st 9926 9926 mosfet OZ 9926
Text: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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Si9926DY
IC OZ 9926
st 9926
9926 mosfet
OZ 9926
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KPL 3009
Abstract: RJ45 CONNECTOR PLUG 10G rj45 Harting Technology Group Catalogue HARTING Device Connectivity buchanan 612 648 ACC MICRO 2089 1042-AASFP snap on tools for electronic Acc 2089 harting F-95972 Paris dsub 9 pole
Text: 98 42 914 0201 HARTING News 2010 People | Power | Partnership HARTING worldwide Transforming customer wishes into concrete solutions The HARTING Technology Group is skilled in the fields of electrical, electronic and optical connection, transmission and networking, as well as in manufacturing, mechatronics and software creation.
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MO/2010-04-12/5
KPL 3009
RJ45 CONNECTOR PLUG
10G rj45
Harting Technology Group Catalogue HARTING Device Connectivity
buchanan 612 648
ACC MICRO 2089
1042-AASFP
snap on tools for electronic
Acc 2089
harting F-95972 Paris dsub 9 pole
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sec d 5072 transistor
Abstract: 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906
Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each
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EMC2101
EMC2101
MS-012
sec d 5072 transistor
1250h
2912 TRANSISTOR PNP
D60H
diode 5819
AT24C02B
PWM 555 FAN CONTROL
127C
2N3904
2N3906
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Untitled
Abstract: No abstract text available
Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each
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EMC2101
EMC2101
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Untitled
Abstract: No abstract text available
Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each
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EMC2101
EMC2101
MS-012
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Untitled
Abstract: No abstract text available
Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each
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EMC2101
EMC2101
MS-012
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1250H
Abstract: sec d 5072 transistor 2912 TRANSISTOR PNP 4512 3.3v E40H MA 1360H 2864 EEPROM 3296 Variable Resistor 1k ohm 4560 8 pin 970H
Text: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each
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EMC2101
EMC2101
1250H
sec d 5072 transistor
2912 TRANSISTOR PNP
4512 3.3v
E40H
MA 1360H
2864 EEPROM
3296 Variable Resistor 1k ohm
4560 8 pin
970H
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st 9926
Abstract: JANTXV1N6488
Text: Zener Regulator Diodes Part Number MLL5915D-1 SM BJ5915B 1N6487 1N6487US JAN1N6487 JAN1N6487US JANTX1N6487 JANTX1N6487US JANTXV1N6487 JANTXV1N6487US SMBJ4730 SMBJ4730A 1N5916A 1N5916B 1N5916C 1N5916D MLL5916B MLL5916B-1 MLL5916C MLL5916C-1 MLL5916D MLL5916D-1
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DO-213AA
DO-41
DO-213AB
O-213AA
st 9926
JANTXV1N6488
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diode lt 823
Abstract: R9306 SC236D ERT 3281 c93-02 r9305 ucl82 SAY20 service-mitteilungen ucl 82
Text: SERVICE-MITTEILUNGEN VfB FT I N D U S T R I E V E R T R I E B i RUNDFUNK UND FERNSEHEN radto - te/ev/s/on \ A usgabe Seife 6 1988 1 - 4 M itteilu n g aus dem VEB Fernsehgerätew erk S ta ß fu rt Änderung der V ideostufe b e i a lle n schw arz/w eiß-G eräten
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93o5/E
diode lt 823
R9306
SC236D
ERT 3281
c93-02
r9305
ucl82
SAY20
service-mitteilungen
ucl 82
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Fairchild dtl catalog
Abstract: Fairchild 9960 nixie driver fairchild micrologic MARKING code WMM RF transistor UL903 gi 9644 diode transistor lr 3303 mod 8 counter transistor H SD 965 7L UA726C
Text: Fairchild Semiconductor Data Cataloq 1969 The Fairchild Semiconductor Data Catalog — an all-inclusive volume of product infor mation covering diodes, transistors * 9^ and linear integrated circuits, MSI and LSI devices from the world’s Ingest supplier
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BR-BR-0034-58
Fairchild dtl catalog
Fairchild 9960 nixie driver
fairchild micrologic
MARKING code WMM RF transistor
UL903
gi 9644 diode
transistor lr 3303
mod 8 counter
transistor H SD 965 7L
UA726C
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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FZK101
Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974
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Grou19
CN127-128-638
ZN220-320.
CN131-132-642.
ZN221-321.
CN133-134-644.
ZN248-348.
CN135-136-646
ZN222-322.
CN121-122-682.
FZK101
FZK105
upd101
SNF10
SN76131
TAA700
FZH111
FZJ101
MFC8010
MFC8001
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