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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability.	Original	PDF	LDN9926ET1G

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability.

Original

PDF

LDN9926ET1G