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    9840 DIODE Search Results

    9840 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    9840 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mrf555

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


    Original     		PDF MRF553 BFR91 BFR90 MRF545 MRF544 MRF553 mrf555

    2N5179

    Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


    Original     		PDF MRF553 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1316 2N5179 MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip

    2n2857

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


    Original     		PDF MRF553 2n2857

    bead

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


    Original     		PDF MRF553 bead

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original     		PDF MRF553 MRF553G

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original     		PDF MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553

    200 watt hf mosfet

    Abstract: 100 watt hf mosfet 400 watt hf mosfet MS4300 1N5925A 80 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4300 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4300 MS4300 1N5925A MSC0878 200 watt hf mosfet 100 watt hf mosfet 400 watt hf mosfet 80 watt hf mosfet

    MS4550

    Abstract: 200 watt hf mosfet 100 watt hf mosfet C8c3 1N5925A
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4550 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 175 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4550 MS4550 1N5925A MSC0895 200 watt hf mosfet 100 watt hf mosfet C8c3

    9840 diode

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED Module PSMD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSMD 75E/02 PSMD 75E/04 PSMD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt


    Original     		PDF 75E/02 75E/04 75E/06 15nce 9840 diode

    9840 diode

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED Module PSND 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSND 75E/02 PSND 75E/04 PSND 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt


    Original     		PDF 75E/02 75E/04 75E/06 15nce 9840 diode

    9840 diode

    Abstract: fred module
    Text: Fast Recovery Epitaxial Diode FRED Module PSKD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 75E/02 PSKD 75E/04 PSKD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt


    Original     		PDF 75E/02 75E/04 75E/06 15nce 9840 diode fred module

    TH 382

    Abstract: fast diode SOT-227 APT50M50JFLL
    Text: APT50M50JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT50M50JFLL OT-227 TH 382 fast diode SOT-227 APT50M50JFLL

    I2102

    Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
    Text: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate


    Original     		PDF I2102 20ETS. CH-8152 I2102 20ETS 20ETS08 20ETS12 20ETS16 SMD-220

    g10 smd transistor

    Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
    Text: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used


    Original     		PDF 20ETS. Alu-163 CH-8152 g10 smd transistor SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S

    smd diode 708

    Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
    Text: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate


    Original     		PDF 20ETS. CH-8152 smd diode 708 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220

    Untitled

    Abstract: No abstract text available
    Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4300 MSC0878

    200 watt hf mosfet

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4300 MSC0878 200 watt hf mosfet

    80 watt hf mosfet

    Abstract: 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz


    OCR Scan     		PDF MS4300 S4300 MSC0878 80 watt hf mosfet 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor

    Untitled

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz


    OCR Scan     		PDF MS4550 MS4550 MSC0895

    Untitled

    Abstract: No abstract text available
    Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz


    OCR Scan     		PDF MS4550 MSC0895

    5 watt hf mosfet

    Abstract: No abstract text available
    Text: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS


    OCR Scan     		PDF MS4550 MS4550 MSC0895 5 watt hf mosfet

    SP6313US

    Abstract: 1N4S35 9842 1N5988B
    Text: Zener Regulator Diodes M/crasgn/ - Part Number Microsemi Division Mil Data Power W ' Spec Sheet ID Package Outline Typo B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-213AA DO-213AA DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA


    OCR Scan     		PDF DO-35 DO-213AA SP6313US 1N4S35 9842 1N5988B

    CH-8152

    Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
    Text: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used


    OCR Scan     		PDF 40EPS 40EPS. O-247AC CH-8152 40EPS08 40EPS12 40EPS16 60788 ScansUX33

    Untitled

    Abstract: No abstract text available
    Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays


    OCR Scan     		PDF