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    U8439-1

    Abstract: AUS703 NAU-8 namics underfill ABF-GX3 Ablestik underfill DCL5 X23-7772-4 DCL4 X23-7772
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1006-03 DATE: 23-Jul-2010 Product Affected: MEANS OF DISTINGUISHING CHANGED DEVICES: 35.0mm x 35.0mm x 3.42mm FCBGA-1156 (RoHS & Standard)


    Original     		PDF A1006-03 23-Jul-2010 FCBGA-1156 FCBGA-900 23-Oct-2010 89HPES16T16ZABL 89HPES16T16ZABR 89HPES22T16ZABL 89HPES22T16ZABLI U8439-1 AUS703 NAU-8 namics underfill ABF-GX3 Ablestik underfill DCL5 X23-7772-4 DCL4 X23-7772

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    microsemi TVS

    Abstract: MicroNote
    Text: MicroNote Series 118 by Mel Clark and Kent Walters, Microsemi Scottsdale TVS/Chip Product Overview Microsemi’s offerings of TVS chip size products include: TVS/Chip Passivated TVS/Chip types of: a planar, b) mesa and c) bidirectional mesa are illustrated


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    duraseal

    Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
    Text: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and


    Original     		PDF 200oC duraseal SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide

    bt 1696

    Abstract: 12x12 bga thermal resistance 35x35 bga BGA 23X23 BGA 27X27 pitch TsoP 20 Package XILINX xilinx CS144 thermal resistance CF1144 BGA thermal resistance 6x8 smt a1 transistor
    Text: Xilinx Advanced Packaging Electronic packages are the interconnect housings for semiconductor devices. They provide electrical interconnections between the IC and the board, and they efficiently remove the heat generated by the device. Device feature sizes are


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    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    X23-7772-4

    Abstract: U8439-1 DCL5 AUS703 namics underfill X23-7772 NAU-8 ABF-GX3 namics U8439-1 X2377
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0904-03 DATE: 22-May-2009 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: 19mm x 19mm FCBGA-324 (RoHS) Refer to Attachment II for the affected part numbers


    Original     		PDF A0904-03 22-May-2009 FCBGA-324 22-Aug-2009 JESD22-A104 JESD22-A118 JESD22-A103 JESD22-A113. 80KSW0001AR X23-7772-4 U8439-1 DCL5 AUS703 namics underfill X23-7772 NAU-8 ABF-GX3 namics U8439-1 X2377

    Thin Film Resistors SiCr

    Abstract: SiCr thin film TI SAC305 hfss 80Au-20Sn 3 to 10 GHz bandpass filter sac305 thermal conductivity 184394 ansoft SAC305 reflow bga
    Text: AT C / / A V X T H I N F I L M TECHNOLOGIES Engineered Thin Film Solutions TA B L E O F C O N T E N T S Introduction to ATC // AVX Thin Film Technologies .1 - 2


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    90Pb10Sn

    Abstract: FODB10X 5SN3 AN-3011 FODB100 95Pb-5 62Sn36Pb2Ag 95Pb5Sn
    Text: www.fairchildsemi.com Application Note AN-3011 Surface Mounting Technology Assembly Guidelines for Fairchild’s Microcouplers Ball Grid Array Optocoupler technology, consisting of a light source and a photosensitive detector surrounded by a transparent light


    Original     		PDF AN-3011 FODB100 AN3006009 90Pb10Sn FODB10X 5SN3 AN-3011 95Pb-5 62Sn36Pb2Ag 95Pb5Sn

    underfill

    Abstract: cte table flip chip substrate ansys darveaux with or without underfill FR4 substrate height and thickness cte table bga cte table 63Sn37Pb application for bt 151 FR4 substrate
    Text: Reliability Study of High-Pin-Count Flip-Chip BGA Yuan Li, John Xie, Tarun Verma and Vincent Wang Altera Corp. 101 Innovation Drive, San Jose, CA 95134 ysli@altera.com Abstract A family of 1.0-mm pitch full-array flip-chip BGAs were developed. These packages vary from 27 to 45 mm in package


    Original     		PDF 12x10-6 17x10-6 6x10-6 underfill cte table flip chip substrate ansys darveaux with or without underfill FR4 substrate height and thickness cte table bga cte table 63Sn37Pb application for bt 151 FR4 substrate