2N7616

Abstract: 2N7616UB IRHLUB770Z4 IRHLUB730Z4 IRHLUB7970Z4
Contextual Info: PD - 95813D 2N7616UB IRHLUB770Z4 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω ID 0.8A IRHLUB730Z4 300K Rads (Si) 0.8A 0.55Ω

IRF3707Z

Abstract: IRF3707ZL IRF3707ZS
Contextual Info: PD - 95812A Applications l High Frequency Synchronous Buck Converters for Computer Processor Power IRF3707Z IRF3707ZS IRF3707ZL HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

B965

Abstract: IRFR2905Z IRFU2905Z
Contextual Info: PD - 95811 IRFR2905Z IRFU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14.5mΩ

95818

Contextual Info: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)

IRHNJ63130

Abstract: IRHNJ67130 4.5v to 100v input regulator
Contextual Info: PD-95816A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67130 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω ID 22A* 22A* SMD-0.5 International Rectifier’s R6TM technology provides

Contextual Info: PD-95816D IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω

80c85

Abstract: IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK
Contextual Info: HS-82C12RH Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan

5962R9581801QJC

Abstract: 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD
Contextual Info: HS-82C12RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

Contextual Info: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides

8212 latch

Abstract: 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 17D06
Contextual Info: HS-82C12RH Semiconductor Radiation Hardened March 1996 8' Bit Input/O utput POU Functional Diagram Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

U160

Abstract: RUE160S
Contextual Info: R Raychem Corporation 300 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PRODUCT: RUE160S DOCUMENT: SCD 23818 PCN: 958175 REV LETTER: C REV DATE: AUGUST 28, 1999 PAGE NO.: 1 OF 1 PolySwitch PTC Devices Resettable Fuse Specification Status:

LG crt monitor service manual

Abstract: LG LCD 2048 1536 lg crt monitor rgb cable IBM motherboard socket 478 rev 1.6 26 pin slim-FDD cable PCM-9581 RS232 8 pin MINI DIN 9 pole start socket-478 motherboard lg crt monitor circuit board USB TO LAN RJ45 Ethernet wiring system layout
Contextual Info: PCM-9581 Intel Pentium M SBC with Audio, VGA, LCD User Manual Copyright This document is copyrighted, 2006. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.

Contextual Info: PD - 95812 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power IRF3707Z IRF3707ZS IRF3707ZL HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

Contextual Info: PD - 95817 IRFL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A

IRHYB593Z30CM

Abstract: IRHYB597Z30CM
Contextual Info: PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYB597Z30CM 100K Rads (Si) 0.048Ω IRHYB593Z30CM 300K Rads (Si) 0.048Ω ID -20A*

IRFL024Z

Contextual Info: PD - 95817 IRFL024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A

nicomatic led

Abstract: ZQX35W-035 ZQG35W-035 ZQW35W-035
Contextual Info: NICOMATIC NORTH AMERICA 165 Veterans Way, Unit 200, Warminster, PA 18974 Tel: 215 444-9580 Fax: (215) 444-9581 email: sales@nicomatic.net Membrane Thin LED Specification Product Specification For Top Emitting Surface Mount LED (1206 Package with 0.35 mm height)

4.5v to 100v input regulator

Contextual Info: PD - 95816 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67130 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) RDS(on) 0.042Ω ID 22A* IRHNJ63130 300K Rads (Si) 0.042Ω 22A* IRHNJ64130 600K Rads (Si)

JANSR2N7587U3

Abstract: IRHNJ67130 JANSR2N7587 JANSF2N7587U3 12V00 JANSR2N758 4.5v to 100v input regulator
Contextual Info: PD-95816C IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω

IRFR2905Z

Abstract: IRFU2905Z
Contextual Info: PD - 95811 IRFR2905Z IRFU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14.5mΩ

2N7616

Abstract: IRHLUBC770Z4 2N7616UBC 2N7616UB IRHLUB770Z4 IRHLUB7970Z4
Contextual Info: PD-95813F 2N7616UB IRHLUB770Z4 2N7616UBC IRHLUBC770Z4 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB and (UBC) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLUB770Z4 IRHLUBC770Z4 100K Rads (Si) 0.68Ω 0.8A IRHLUB7370Z4

Contextual Info: PD - 95811 IRFR2905Z IRFU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14.5mΩ

Contextual Info: PD-95819A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYB597Z30CM 100K Rads (Si) 0.072Ω IRHYB593Z30CM 300K Rads (Si) 0.072Ω ID -20A*

JANSR2N7587

Abstract: JANSR2N7587U3 IRHNJ67130 4.5v to 100v input regulator
Contextual Info: PD-95816D IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω