A6T Diode
Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Text: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF
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95513C
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
AN-994.
IRFR/U3710Z
A6T Diode
diode A6t
Diode GP 641
a6t gd
IRFR3710ZPBF
a6t 69
marking a6t
IRFU3710Z
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Untitled
Abstract: No abstract text available
Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500
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33N50
O-264
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MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
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125OC
Abstract: IXTK33N50
Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data TO-264 AA Symbol Test conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous
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33N50
O-264
125OC
IXTK33N50
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IXTK33N50
Abstract: No abstract text available
Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V
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OCR Scan
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33N50
O-264AA
33N50
IXTK33N50
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