IC103
Abstract: MARKING code 951 BDP952 BDP956 Q62702-D1339 Q62702-D1341 Q62702-D1343
Text: BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952.BDP956 PNP Type Marking Ordering Code Pin Configuration
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Original
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BDP952.
BDP956
Q62702-D1339
OT-223
Q62702-D1341
Q62702-D1343
Nov-28-1996
IC103
MARKING code 951
BDP952
BDP956
Q62702-D1339
Q62702-D1341
Q62702-D1343
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PDF
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TRANSISTOR 955 E
Abstract: VPS05163 50/TRANSISTOR 955 E
Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163
|
Original
|
VPS05163
OT-223
Sep-30-1999
TRANSISTOR 955 E
VPS05163
50/TRANSISTOR 955 E
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PDF
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TRANSISTOR 955 E
Abstract: VPS05163
Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration
|
Original
|
VPS05163
OT-223
Sep-30-1999
TRANSISTOR 955 E
VPS05163
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package
|
Original
|
VPS05163
OT-223
Sep-30-1999
|
PDF
|
VPS05163
Abstract: No abstract text available
Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors For AF driver and output stages 4 High current gain Low collector-emitter saturation voltage Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BDP 952
|
Original
|
VPS05163
OT-223
Sep-30-1999
VPS05163
|
PDF
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53Z Zetex
Abstract: X5T955 X5T851 ZX5T851G
Text: Advanced Products This section provides provisional short form data for the products to be released from the Zetex Miniature Package Power Solutions MPPS™ development plan described on page 4 of this brochure. Provisional short form data is also provided here for a
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Original
|
ZX5T849Z*
ZX5T851Z*
ZX5T949Z*
ZX5T951Z*
OT223
53Z Zetex
X5T955
X5T851
ZX5T851G
|
PDF
|
BDP955
Abstract: BDP951 BDP952 BDP953 BDP956 VPS05163
Text: BDP951 . BDP955 NPN Silicon AF Power Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration
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Original
|
BDP951
BDP955
BDP952
BDP956
OT223
BDP953
VPS05163
BDP955
BDP951
BDP952
BDP953
BDP956
VPS05163
|
PDF
|
BDP ST
Abstract: BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163
Text: BDP951 . BDP955 NPN Silicon AF Power Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration
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Original
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BDP951
BDP955
BDP952
BDP956
OT223
BDP953
VPS05163
BDP ST
BDP951
BDP952
BDP953
BDP955
BDP956
VPS05163
|
PDF
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bdp 11
Abstract: BCP52-16 BDP951 BDP953 BDP954 E6327 VPS05163 BM sot223 marking code
Text: BDP951, BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BDP954 PNP 2 1 Pin Configuration VPS05163 Type Marking
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Original
|
BDP951,
BDP953
BDP954
VPS05163
BDP951
OT223
bdp 11
BCP52-16
BDP951
BDP953
BDP954
E6327
VPS05163
BM sot223 marking code
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PDF
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FZT957QTA
Abstract: FZT957
Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current
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Original
|
FZT957
OT223
-300V
-240mV
FZT857
AEC-Q101
OT223
J-STD-020
FZT957
DS33191
FZT957QTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.
|
Original
|
FZT957
OT223
-300V
-240mV
FZT857
J-STD-020
MIL-STD-202,
DS33191
|
PDF
|
FZT951
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -60V IC = -5A high Continuous Collector Current ICM = -15A Peak Pulse Current
|
Original
|
FZT951
OT223
-140mV
FZT851
AEC-Q101
OT223
J-STD-020
FZT951
DS33179
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT958 Green 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -400V IC = -0.5A high Continuous Collector Current ICM = -1.5A Peak Pulse Current
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Original
|
FZT958
OT223
-400V
-400mV
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
FZT958
DS36166
|
PDF
|
X5T951
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current
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Original
|
ZX5T951G
OT223
-70mV
ZX5T851G
AEC-Q101
OT223
J-STD-020
DS33424
X5T951
|
PDF
|
|
|
npn smd 2a
Abstract: smd 27E S0T223 T79 SMD BDS949 BDS951 BDS953 BDS955 IEC134 S0T-223
Text: BDS949/951/953/9S5 Datasheet statu* Product specification date of issue April 1991 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope
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OCR Scan
|
BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
PINNING-SOT223
BDS949
BDS951
BDS953
BDS955
npn smd 2a
smd 27E
S0T223
T79 SMD
IEC134
S0T-223
|
PDF
|
T79 SMD
Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
Text: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general
|
OCR Scan
|
BDS949/951/953/9S5
OT223)
BDS950/952/954/956.
OT223
BDS949
BDS951
BDS953
BDS955
T79 SMD
951 pnp sot223
t7 sot223
|
PDF
|
S95 SMD
Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors
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OCR Scan
|
BDS950/952/954/956
OT223)
BDS949/951/953/955.
OT223
BDS950
BDS952
BDS954
BDS956
S95 SMD
s954
s95A
BDS95S
1S91
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage II o II o SOT-223 il O II CM SOT-223 3 =E o 1 =B LU 1 =B PD P 955 Q62702-D1343
|
OCR Scan
|
OT-223
Q62702-D1343
Q62702-D1341
Q62702-D1339
BDP952.
BDP956
a535b05
0121D34
|
PDF
|
C3317
Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223
|
OCR Scan
|
OT223)
BDS949/951/953/955,
7110fl2b
BDS950/952/954/956
OT223
BDS950
BDS952
BDS954
BDS956
C3317
S95 SMD
1S91
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general
|
OCR Scan
|
BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
BDS949
BDS951
BDS953
BDS955
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status P r o d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 BDS949/9517953/955 NPN silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors in a miniature SMD envelope
|
OCR Scan
|
BDS949/9517953/955
OT223
OT223)
BDS950/952/954/956.
BDS949/951/953/955
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general
|
OCR Scan
|
BDS950/952/954/956
OT223
OT223)
BDS949/951/953/955.
BDS950
BDS952
BDS954
BDS956
|
PDF
|
B 722 P
Abstract: BB 722 DC DC BB 722
Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP
|
OCR Scan
|
BF722
Q62702-F1238
Q62702-F1306
OT-223
B 722 P
BB 722 DC DC
BB 722
|
PDF
|
55n60
Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
Text: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE
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OCR Scan
|
OT-23
BC807W
OT-323
BC817W
OT-89
55n60
transistor Bc 949
transistor BC 56
BDP 71
AF-Transistor
siemens sot223
Transistor bdp 71
4126P
SOT-223 2907
BC 948
|
PDF
|
