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    951 PNP SOT223 Search Results

    951 PNP SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    951 PNP SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC103

    Abstract: MARKING code 951 BDP952 BDP956 Q62702-D1339 Q62702-D1341 Q62702-D1343
    Text: BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952.BDP956 PNP Type Marking Ordering Code Pin Configuration


    Original     		PDF BDP952. BDP956 Q62702-D1339 OT-223 Q62702-D1341 Q62702-D1343 Nov-28-1996 IC103 MARKING code 951 BDP952 BDP956 Q62702-D1339 Q62702-D1341 Q62702-D1343

    TRANSISTOR 955 E

    Abstract: VPS05163 50/TRANSISTOR 955 E
    Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163


    Original     		PDF VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163 50/TRANSISTOR 955 E

    TRANSISTOR 955 E

    Abstract: VPS05163
    Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration


    Original     		PDF VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package


    Original     		PDF VPS05163 OT-223 Sep-30-1999

    VPS05163

    Abstract: No abstract text available
    Text: BDP 952 . BDP 956 PNP Silicon AF Power Transistors  For AF driver and output stages 4  High current gain  Low collector-emitter saturation voltage  Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BDP 952


    Original     		PDF VPS05163 OT-223 Sep-30-1999 VPS05163

    53Z Zetex

    Abstract: X5T955 X5T851 ZX5T851G
    Text: Advanced Products This section provides provisional short form data for the products to be released from the Zetex Miniature Package Power Solutions MPPS™ development plan described on page 4 of this brochure. Provisional short form data is also provided here for a


    Original     		PDF ZX5T849Z* ZX5T851Z* ZX5T949Z* ZX5T951Z* OT223 53Z Zetex X5T955 X5T851 ZX5T851G

    BDP955

    Abstract: BDP951 BDP952 BDP953 BDP956 VPS05163
    Text: BDP951 . BDP955 NPN Silicon AF Power Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration


    Original     		PDF BDP951 BDP955 BDP952 BDP956 OT223 BDP953 VPS05163 BDP955 BDP951 BDP952 BDP953 BDP956 VPS05163

    BDP ST

    Abstract: BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163
    Text: BDP951 . BDP955 NPN Silicon AF Power Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration


    Original     		PDF BDP951 BDP955 BDP952 BDP956 OT223 BDP953 VPS05163 BDP ST BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163

    bdp 11

    Abstract: BCP52-16 BDP951 BDP953 BDP954 E6327 VPS05163 BM sot223 marking code
    Text: BDP951, BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BDP954 PNP 2 1 Pin Configuration VPS05163 Type Marking


    Original     		PDF BDP951, BDP953 BDP954 VPS05163 BDP951 OT223 bdp 11 BCP52-16 BDP951 BDP953 BDP954 E6327 VPS05163 BM sot223 marking code

    FZT957QTA

    Abstract: FZT957
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 AEC-Q101 OT223 J-STD-020 FZT957 DS33191 FZT957QTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191

    FZT951

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -60V IC = -5A high Continuous Collector Current ICM = -15A Peak Pulse Current


    Original     		PDF FZT951 OT223 -140mV FZT851 AEC-Q101 OT223 J-STD-020 FZT951 DS33179

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT958 Green 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -400V IC = -0.5A high Continuous Collector Current ICM = -1.5A Peak Pulse Current


    Original     		PDF FZT958 OT223 -400V -400mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT958 DS36166

    X5T951

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current


    Original     		PDF ZX5T951G OT223 -70mV ZX5T851G AEC-Q101 OT223 J-STD-020 DS33424 X5T951

    npn smd 2a

    Abstract: smd 27E S0T223 T79 SMD BDS949 BDS951 BDS953 BDS955 IEC134 S0T-223
    Text: BDS949/951/953/9S5 Datasheet statu* Product specification date of issue April 1991 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope


    OCR Scan     		PDF BDS949/951/953/9S5 S0T223) BDS950/952/954/956. PINNING-SOT223 BDS949 BDS951 BDS953 BDS955 npn smd 2a smd 27E S0T223 T79 SMD IEC134 S0T-223

    T79 SMD

    Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
    Text: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS949/951/953/9S5 OT223) BDS950/952/954/956. OT223 BDS949 BDS951 BDS953 BDS955 T79 SMD 951 pnp sot223 t7 sot223

    S95 SMD

    Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
    Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF BDS950/952/954/956 OT223) BDS949/951/953/955. OT223 BDS950 BDS952 BDS954 BDS956 S95 SMD s954 s95A BDS95S 1S91

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage II o II o SOT-223 il O II CM SOT-223 3 =E o 1 =B LU 1 =B PD P 955 Q62702-D1343


    OCR Scan     		PDF OT-223 Q62702-D1343 Q62702-D1341 Q62702-D1339 BDP952. BDP956 a535b05 0121D34

    C3317

    Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
    Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223


    OCR Scan     		PDF OT223) BDS949/951/953/955, 7110fl2b BDS950/952/954/956 OT223 BDS950 BDS952 BDS954 BDS956 C3317 S95 SMD 1S91

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general


    OCR Scan     		PDF BDS949/951/953/9S5 S0T223) BDS950/952/954/956. BDS949 BDS951 BDS953 BDS955

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status P r o d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 BDS949/9517953/955 NPN silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors in a miniature SMD envelope


    OCR Scan     		PDF BDS949/9517953/955 OT223 OT223) BDS950/952/954/956. BDS949/951/953/955

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general


    OCR Scan     		PDF BDS950/952/954/956 OT223 OT223) BDS949/951/953/955. BDS950 BDS952 BDS954 BDS956

    B 722 P

    Abstract: BB 722 DC DC BB 722
    Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF BF722 Q62702-F1238 Q62702-F1306 OT-223 B 722 P BB 722 DC DC BB 722

    55n60

    Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
    Text: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE


    OCR Scan     		PDF OT-23 BC807W OT-323 BC817W OT-89 55n60 transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948