TEA 1511

Abstract: 28C65A CAT28C65A 28C65A-20
Contextual Info: CATALYST SEMICONDUCTOR S3E D • C A T A L Y S T 1.1 bat IS '0001034 5 ■ . S E M IC O N D U C T O R ,IN C . 2231 CALLE DE LUNA, SANTA CLARA, CA 950S4 Telephone: 408 748-7700 CAT28C65A 8Kx 8 BIT CMOS EEPROM DESCRIPTION FEATURES The CAT28C65A is a fast, low power, 5V-only

p68 SMD

Abstract: ICP-01
Contextual Info: PRELIMINARY DATA SHEET ISG1000 5 V CATV MODEM RF RECEIVER stN M m m FEATURES DESCRIPTION AND APPLICATIONS • MCNS COMPLIANT: The ISG1000 is a complete RF receiver designed for use cable modem applications. The receiver integrates a diplex filter, triple conversion receiver and incorporates RF path for exter­

upb556c

Abstract: PB55
Contextual Info: JUN i -7 1991 NEC 150 MHz D IVIDE-BY-16/17 LOW POWER PRESCALER UPB556C DESCRIPTION T he */P B 556C is a V H F tw o-m odulus prescaler intended for use in P L L Digital Tuning Systems in conjunction w ith jjP D 1 7 0 0 series. Advanced bipolar process technology is utilized to realize high frequency operation with

D1641

Abstract: 63D1641 53D1641
Contextual Info: 4 0 9 6 x 4 Diagnostic Registered PROM 53D 1641 63D 1641 Asynchronous Enable Patent Pending Features/Benefits Description • Asynchronous output enable The 53/63D1641 is a 4Kx4 PROM with registered three-state outputs and a shadow register for diagnostic capabilities.

74s409

Abstract: memorias ram SN74S409 DP8409A SM74S409-2 *LS461 74S40 SN74S40
Contextual Info: 256K Dynamic RAM Control le r / Driver SN74S409-2/DP8409A-2 SN74S409/DP8409A F eatu res/ Benefits Ordering Inform ation • All DRAM drive functions on one chip have on-chip hlghcapacitance load drivers specified up to 88 DRAMs • Drives directly all 16K, 64K and 256K DRAMs; capable

MC10H101

Abstract: ECL10KH
Contextual Info: ECL10KH High-Speed Em itter-Coupled Logic Fam ily M C10H101 Quad O R/NO R Gate Ordering Inform ation Features/B enefits • Propagation delay, 1 ns typical PART NUMBER • Power dissipation 25 mW/gate MC10H101 PACKAGE TEMPERATURE J,N,NL 20 Com • Noise margin 150 mV

Contextual Info: CMOS Octal Bus Transceiver < /o f> Y & Features/ Benefits 82C 86 82C 87 Ordering Information • Full 8-bit bidirectional bus interface PART NUMBER PKG TEMP • Low power consumption 82C86C N, J Com • Wide commercial operating supply and temperature range -4.5 V to 5.5 V, -40°C to +85°C

G3202

Abstract: ICP-01
Contextual Info: PRELIMINARY DATA SHEET ISG2000 5 V CATV MODEM RF TRANSCEIVER stN M m m FEATURES DESCRIPTION AND APPLICATIONS • TWO WAY MCNS COMPLIANT: The ISG2000 is a complete RF transceiver designed for use in cable modem applications. The transceiver integrates a diplex

4B2S

Abstract: 72741 k 4110 tip 338 N80E
Contextual Info: PACKAGE DIAGRAM OUTLINES PQFP Continued PACKAGE DIAGRAM OUTLINES PQFP (Continued) REVISIONS DWG § s Y M B □ REV DESCRIPTION DATE 27649 04 REDRAW TO JEDEC FORM AT 01/24/92 APPRO VED P Q 80- JEDEC VARIATION N □ B E -2 LAND PATTERN DIMENSIONS T E L MIN

land pattern PQFP 132

Abstract: PQFP 132 PACKAGE DIMENSION MO-112 N2979 land pattern PQFP 208
Contextual Info: PACKAGE DIAGRAM OUTLINES PQFP Continued PACKAGE DIAGRAM OUTLINES PQFP (Continued) R E V ISIO N S DWG § s Y M B □ REV DESCRIPTION DATE 27649 04 REDRAW TO JEDEC FORMAT 01/24/92 APPROVED P Q 80- JEDEC VARIATION N □ B E -2 LAND PATTERN DIMENSIONS T E L

marking code f4 DIODE

Abstract: DIODE MARKING CODE F4
Contextual Info: HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER PS2832-1 ,-4 PS2833-1 ,-4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE • SOP SMALL OUT-LINE PACKAGE 4, 16-pin SOP, Lead pin pitch is 1.27 mm

Contextual Info: 'W D IVID E-B Y -2 LOW VOLTAGE UPB558G AND LOW POWER PRESCALER_ The UPB558G is a low voltage and low power prescaler for portable TV and radio with television, which divides by 2 for VHF. This device can be operated up to 260 M Hz by utilizing a low voltage 2.0 to 3.5 V supply. It uses a highly

m0-112

Abstract: land pattern PQFP 132 MO-069 tc 4049 MO-112
Contextual Info: PACKAGE DIAGRAM OUTLINES PQFP Continued PACKAGE DIAGRAM OUTLINES PQFP (Continued) R E V ISIO N S DWG § s Y M B □ REV DESCRIPTION DATE 27649 04 REDRAW TO JEDEC FORMAT 01/24/92 APPROVED P Q 80- JEDEC VARIATION N □ B E -2 LAND PATTERN DIMENSIONS T E L

nec microwave

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS FEATURES HIGH OUTPUT POWER: 0 5 W Units in r PACKAGE OUTLINE 99 HIGH LINEAR GAIN: 9 5 dB -5.2i0.3-*j HIGH EFFICIENCY (PAE : 38% - 1 . 0 ± 0.1 N SUPERIOR INTERMODULATION DISTORTION