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    d 1830

    Abstract: No abstract text available
    Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original
    PDF 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB d 1830