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    NTE484

    Abstract: No abstract text available
    Text: NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration


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    PDF NTE484 947MHz NTE484 800MHz 836MHz

    D915C

    Abstract: No abstract text available
    Text: STANDARD SPECIFICATIONS Condition 902MHz - 928MHz 902MHz - 928MHz 10MHz to 800MHz 800MHz to 845MHz 845MHz to 880MHz 947MHz to 992MHz 992MHz to 1020MHz 1020MHz to 1200MHz - Parameter Center Frequency MHz : Insertion Loss (dB): Passband Ripple (dB): Attenuation (dB):


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    PDF 902MHz 928MHz 10MHz 800MHz 800MHz 845MHz 845MHz 880MHz D915C

    MAX2623

    Abstract: MAX2623 equivalent MAX262 MAX2622 MAX2622EUA MAX2623EUA MAX2624 MAX2624EUA
    Text: 19-1528; Rev 0; 8/99 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO Monolithic Voltage-Controlled Oscillators Features ♦ Fully Monolithic ♦ Guaranteed Performance ♦ Wide Choice of Frequencies 855MHz to 881MHz MAX2622 885MHz to 950MHz (MAX2623) 947MHz to 998MHz (MAX2624)


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    PDF 855MHz 881MHz MAX2622) 885MHz 950MHz MAX2623) 947MHz 998MHz MAX2624) MAX2622/MAX2623/MAX2624 MAX2623 MAX2623 equivalent MAX262 MAX2622 MAX2622EUA MAX2623EUA MAX2624 MAX2624EUA

    MQE9

    Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


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    PDF HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors

    TQ9203

    Abstract: No abstract text available
    Text: WIRELESS COMMUNICATIONS DIVISION TQ9203 VDD DATA SHEET Mixer IF out Mixer LO In Mixer RF In LNA IN0 Select Low-Current Cellular Band Downconverter IC LNA out LNA IN1 GND Features LO Tune §+5-V single supply §Internal buffer amplifier on mixer LO port Product Description


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    PDF TQ9203 TQ9203 10dBm

    LNA SOT23-6

    Abstract: No abstract text available
    Text: Maxim Solutions for 3.5GHz Wireless Local Loop MAX2683/MAX2684 MAX2680/MAX2681/MAX2682/MAX2690 3.4GHz to 3.8GHz RF Frequency Range Logic-Enabled LO Frequency Doubler +6.7dB Gain MAX2683 +1.0dB Gain (MAX2684) Adjustable IIP3 +7dBm to +11dBm (MAX2683) Adjustable IIP3 +8dBm to +12dBm (MAX2684)


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    PDF MAX2683/MAX2684 MAX2683) MAX2684) 11dBm 12dBm 16-pin MAX2645 MAX2680/MAX2681/MAX2682/MAX2690 LNA SOT23-6

    MAX262

    Abstract: MAX2622 MAX2622EUA MAX2623 MAX2623EUA MAX2624 MAX2624EUA MAX2623 equivalent blocking oscillator applications
    Text: 19-1528; Rev 1; 5/00 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO Monolithic Voltage-Controlled Oscillators Features ♦ Fully Monolithic ♦ Guaranteed Performance ♦ On-Chip 50Ω Output Match ♦ Wide Choice of Frequencies 855MHz to 881MHz MAX2622


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    PDF 855MHz 881MHz MAX2622) 885MHz 950MHz MAX2623) 947MHz 998MHz MAX2624) 866MHz MAX262 MAX2622 MAX2622EUA MAX2623 MAX2623EUA MAX2624 MAX2624EUA MAX2623 equivalent blocking oscillator applications

    HD155121F

    Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


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    PDF HD155121F ADE-207-265A HD155121F 48-pin Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5

    Untitled

    Abstract: No abstract text available
    Text: 19-1528; Rev 1; 5/00 NUAL KIT MA ATION EET H S A EVALU T WS DA FOLLO Monolithic Voltage-Controlled Oscillators Features ♦ Fully Monolithic The inductor and varactor elements of the tank circuits are integrated on-chip, greatly simplifying application of


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    PDF 855MHz 881MHz MAX2622) 885MHz 950MHz MAX2623) 947MHz 998MHz MAX2624) MAX2622/MAX2623/MAX2624

    DIODE C249

    Abstract: transistor c246 implementation of qpsk modulator and demodulator SSB Modulator application note VCO 1ghz circuit diagram of philips USB satellite receiver signal constellation diagram transistor c243 SA602 Double Balanced Mixer and Oscillator cos110
    Text: RF COMMUNICATIONS PRODUCTS AN1892 SA900 I/Q transmit modulator for 1GHz applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA900 I/Q transmit modulator for 1GHz applications AN1892 Author: Wing S. Djen INTRODUCTION


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    PDF AN1892 SA900 SA900 929836-01-36-ND 51F2456 SA900-30021 DIODE C249 transistor c246 implementation of qpsk modulator and demodulator SSB Modulator application note VCO 1ghz circuit diagram of philips USB satellite receiver signal constellation diagram transistor c243 SA602 Double Balanced Mixer and Oscillator cos110

    MB15A16

    Abstract: MB15S02 MB15S02PFV SSOP-16 tcxo 13MHz 1khz oscillator
    Text: DS04-21338-1E DATA SHEET ASSP IF Band PLL Frequency Synthesizer MB15S02 • DESCRIPTION RY The Fujitsu MB15S02 is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency synthesizer with pulse swallow operation. The reference divider and comparison divider have fixed divide ratios, so that


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    PDF DS04-21338-1E MB15S02 MB15S02 MB15A16 SSOP-16) digitPT-8P-M03) FPT-8P-M03) F08005S-1C-2 MB15A16 MB15S02PFV SSOP-16 tcxo 13MHz 1khz oscillator

    Hitachi DSA002743

    Abstract: Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


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    PDF HD155121F ADE-207-265 HD155121F 48-pin Hitachi DSA002743 Nippon capacitors

    mb87006

    Abstract: TRANSISTOR B0413 transistor bf 175
    Text: Introduction and Quick Selection Guide Prescalers CMOS Phase—Locked Loops PLLs Super PLLs (Single Chip PLLs/Prescalers) Super Analog RF Devices BiCMOS LSI RF Integrated Circuits Piezoelectric Devices/SAW Filters Power Management Switches Application Notes and Articles


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