945 NPN Search Results

945 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

945 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
honeywell ultrasonic 945 Abstract: DIN VDE-0660 FR26 DIN VDE 0660 honeywell ultrasonic ces 8064 945-L4Y-AD-001 braun ROSA attention 19-30Vdc Text: Ultrasonic Distance Sensor Ultraschall Abstandssensor Capteurs Ultrasoniques 945-F4Y-AD-001/2 945-L4Y-AD-001/2 945-N4Y-AD-001/2 945-S4Y-AD-001/2 ! WARNING ! WARNUNG ! ATTENTION PERSONAL INJURY DO NOT USE these products as safety or emergency stop devices, or in any other	Original	945-F4Y-AD-001/2 945-L4Y-AD-001/2 945-N4Y-AD-001/2 945-S4Y-AD-001/2 honeywell ultrasonic 945 DIN VDE-0660 FR26 DIN VDE 0660 honeywell ultrasonic ces 8064 945-L4Y-AD-001 braun ROSA attention 19-30Vdc	PDF
telefunken IC 121 Abstract: No abstract text available Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure	Original	D-74025 telefunken IC 121	PDF
NPN transistor mhz s-parameter Abstract: transistor c 2316 Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage	Original	D-74025 NPN transistor mhz s-parameter transistor c 2316	PDF
mitsubishi a1sy41 Abstract: APA3312 A1SX41 Text: 945 FIBER SENSORS Sensor & Wire-saving Link System S-LINK Related Information •■General terms and conditions. F-17 LASER SENSORS PHOTOELECTRIC SENSORS Conforming to EMC Directive Excluding some models MICRO PHOTOELECTRIC SENSORS AREA SENSORS	Original		PDF
TRANSISTOR 85050 Abstract: No abstract text available Text: S822T / S822TW / S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • 4 Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz	Original	S822T S822TW S822TRW OT-143 OT-343 OT-343R OT-143 OT-343 TRANSISTOR 85050	PDF
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol	Original	SHD4193 SHD419203 2N3741	PDF
Untitled Abstract: No abstract text available Text: Not for new design, this product will be obsoleted soon S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure	Original	S852T S852TW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 S852TW OT-323	PDF
MCT2201 Abstract: Opto-isolator Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is	Original	MCT2201 MCT2201 1507C 10sec) 260mW 100x1 Opto-isolator	PDF
marking WS2 sot Abstract: S822T Text: S822T/S822TW/S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz Low noise figure High power gain 2 1 3 4 G2 D G1 Applications For low noise and high gain broadband amplifiers at	Original	S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 29-Aug-03 marking WS2 sot	PDF
sot-23 MARKING 636 Abstract: No abstract text available Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC	Original	S852T S852TW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 S852TW OT-323 sot-23 MARKING 636	PDF
S852T Abstract: S852TW Text: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC	Original	S852T S852TW OT-23 2002/95/EC 2002/96/EC OT-323 S852T OT-23 OT-323 S852TW	PDF
ir 035 Abstract: MCT2201 Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is	Original	MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035	PDF
1251 sot-23 Abstract: No abstract text available Text: S852T / S852TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz Low noise figure High power gain 2 Applications SOT-23 3 1 2 For low noise and high gain broadband amplifiers at	Original	S852T S852TW OT-23 OT-323 OT-23 S852TW OT-323 1251 sot-23	PDF
2sc 945 p transistor Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e	OCR Scan	2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC	PDF

m lc 945 Abstract: BDS945 BDS943 BDS947 945 npn 947 smd Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general	OCR Scan	BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd	PDF
T0-92B Abstract: No abstract text available Text: 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. CASE T0-92B <cy I !I • ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO	OCR Scan	2SC945 2SA733. T0-92B 100mA 200mA 250mW BOX69477	PDF
BDS945 Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors	OCR Scan	711002b BDS943/945/947 T-33-0? OT223) BDS944/946/948. BDS943 BDS945 BDS947 m lc 945 J 3305 DDM317S	PDF
Untitled Abstract: No abstract text available Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.	OCR Scan	BD944 BD946 BD948 BD943; CBD944 0Q34552	PDF
BD946 Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134 Text: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948	OCR Scan	BD944 BD946 BD948 BD943; BD944 500mA -lc-250mA BD946 BD948 lc 945 p transistor BD943 IEC134	PDF
honeywell ultrasonic 945 Abstract: 945-L4Y-2D-1CO 945-F4Y-2D-001 945-L4Y-2D-001 945-N4Y-2D-001 945-F4V-2D-001 945-L4Y-2D-1 C 945 npn ultrasonic range meter from Honeywell 2D001 Text: Ultrasonic Sensors Precision 18 mm Diameter, Digital and Analog FEATURES • Background suppression • Sealed to IP65 • Fixed or adjustable setpoint control • Compensated over 0 to 50°C 32 to 122°F • Inhibit/synchronization input 945 Series Digital Sensors	OCR Scan	945-N 910KA 4551B3D honeywell ultrasonic 945 945-L4Y-2D-1CO 945-F4Y-2D-001 945-L4Y-2D-001 945-N4Y-2D-001 945-F4V-2D-001 945-L4Y-2D-1 C 945 npn ultrasonic range meter from Honeywell 2D001	PDF
Untitled Abstract: No abstract text available Text: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general	OCR Scan	BDS943/945/947 OT223 OT223) BDS944/946/948. BDS943 BDS945 BDS947cation D034b3b btS3T31	PDF
DPB806 Abstract: SG 403 Text: @ O PTEK Product Bulletin OPB8O6 July 1996 Slotted Optical Switch Type OPB8O6 1.0*0 28.42 ,eS5 (21.72) .945 (21.46) ^1 ! 2.70)\|— IT T ! .110 (2.79) \| .090 (3.29) ! .210 (5.33) 1 . 190 ( 4.03) 1 \ 1 1 \ A « E C ^ 025 (0.64) - SO. - AWCE • CATKXK	OCR Scan		PDF
b0948 Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948 Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A	OCR Scan	BD944 BD946 BD948 BD943; BD944 BD948. 7Z82139 b0948 B0943 BD943 b0944 b0946 BD946 BD948	PDF
BD946 Abstract: BD948 IN 3319 B Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.	OCR Scan	BD944 BD946 BD948 BD944 T-33-19 BD946 G0M30Ô IN 3319 B	PDF

945 NPN Search Results

945 NPN Result Highlights (5)

945 NPN Datasheets Context Search

honeywell ultrasonic 945

telefunken IC 121

NPN transistor mhz s-parameter

mitsubishi a1sy41

TRANSISTOR 85050

Untitled

Untitled

MCT2201

marking WS2 sot

sot-23 MARKING 636

S852T

ir 035

1251 sot-23

2sc 945 p transistor

m lc 945

T0-92B

BDS945

Untitled

BD946

honeywell ultrasonic 945

Untitled

DPB806

b0948

BD946