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    9429 Search Results

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    Keystone Electronics Corp 9429

    MACH SCREW BINDING SLOTTED #4-40
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    DigiKey 9429 Bulk 9,995 1
    • 1 $0.15
    • 10 $0.115
    • 100 $0.0868
    • 1000 $0.06625
    • 10000 $0.05534
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    Mouser Electronics 9429 856
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    Newark 9429 Bulk 2,500
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    RS 9429 Bulk 450 1
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    Future Electronics 9429 Bulk 2,500
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    Bisco Industries 9429 87
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    TME 9429 500
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    Sager 9429 2,500
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    Molex 0194290031

    CONN PLUG HSG 12POS 5.84MM
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    DigiKey 0194290031 Tray 2,247 1
    • 1 $3.98
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    Sager 0194290031 864
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    Dialight 5942901013F

    LED CBI 1.6MM GRN SMD RA 13" RL
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    DigiKey 5942901013F Cut Tape 1,784 1
    • 1 $1.56
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    5942901013F Digi-Reel 1,784 1
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    5942901013F Reel 1,600 1,600
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    Newark 5942901013F Bulk 650 1
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    TTI 5942901013F Reel 1,600 1,600
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    Geyer Electronic E K 12.89429

    CRYSTAL, CERAMIC SMD 4 PAD
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    DigiKey 12.89429 Digi-Reel 1,000 1
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    12.89429 Cut Tape 1,000 1
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    • 10 $0.909
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    12.89429 Reel 1,000 1,000
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    Molex 0194290016

    CONN PLUG HSG 16POS 5.84MM
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    DigiKey 0194290016 Tray 778 1
    • 1 $4.74
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    Avnet Americas 0194290016 Bulk 18 Weeks 960
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    Sager 0194290016 960
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    Find more 9429 price and stock on Findchips.com

    9429 Datasheets (4)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    9429 Keystone Electronics Screws, Bolts, Hardware, Fasteners, Accessories, MACH SCREW BINDING SLOTTED 4-40 Original PDF
    94-2989 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 64A D2PAK Original PDF
    942-99999-10583 Fiber Optic Center Single Mode Linear Variable Attenuator Original PDF
    942-99999-10584 Fiber Optic Center Single Mode Linear Variable Attenuator Original PDF

    9429 Datasheets Context Search

    Catalog Datasheet
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    PDF

    MIL-PRF-19500 schottky rectifier

    Abstract: 35CGQ045
    Text: PD -94298A 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated


    Original     		-94298A 35CGQ045 35CGQ045 O-254AA MIL-PRF-19500 MIL-PRF-19500 schottky rectifier PDF

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V PDF

    IRHNJ57133SE

    Abstract: SMD 365A
    Text: PD - 94294 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides


    Original     		IRHNJ57133SE IRHNJ57133SE MIL-STD-750, MlL-STD-750, SMD 365A PDF

    ITT DIODE

    Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
    Text: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K


    Original     		PDF

    IRHNA63160

    Abstract: IRHNA67160
    Text: PD - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω ID 56A* 0.01Ω 56A* SMD-2 International Rectifier’s R6 technology provides


    Original     		4299A IRHNA67160 IRHNA67160 IRHNA63160 90MeV/ contro640A/ MIL-STD-750, MlL-STD-750, IRHNA63160 PDF

    GA100NA60U

    Abstract: ga100na60
    Text: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60U 20kHz 12-Mar-07 GA100NA60U ga100na60 PDF

    LTM-9341

    Abstract: lt 7209 LT 7227 LTD482RC TS550 LTC4727E TS-311A ta7235 LT 7232 LTL-423IN
    Text: ALPHANUMERIC INDEX LBL-9316G . 5-11 LB L -9429G . 5-14 L L S-9308G -


    OCR Scan     		LBL-9316G -9429G S-9308G S-9315G LLS-9407G LTV817M LTV8241 LTM-9341 lt 7209 LT 7227 LTD482RC TS550 LTC4727E TS-311A ta7235 LT 7232 LTL-423IN PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		94295D IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A PDF

    mosfet 1200V 40A

    Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		94295D IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94292 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3205 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3205 55V RDS(on) 0.015Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		O-254AA) IRF5M3205 O-254[ IRHM57163SED IRHM57163SEU MIL-PRF-19500 PDF

    R191737

    Abstract: R191.737.000 CONECTOR
    Text: RAMALL TECHNICAL DATA COAXIAL CONCCTORS ADAPTOR HN M - N F R191.737.000 Issue : 9429 Page 1 Series : ADAPT STO 50 E / 1 DIA 0.906 023 - 1.496-(38) CABLES : CHARACTERISTICS 50 O 0”3 GHz “55/+155 ’C TBO + - X F(GHz)Maxi NOMINAL IMPEDANCE


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance


    Original     		94291B IRF3808 140AV IRF1010 PDF

    9429a

    Abstract: No abstract text available
    Text: A P R O G R A M M A B LE SYNERGY fr e q u e n c y s y n th e s iz e r 25MHz to 400MHz SEMICONDUCTOR CI0Csw 9429a DESCRIPTION FEATURES Improved jitter performance over 9429 25 to 400MHz differential PECL outputs ±25ps peak-to-peak output jitter Minimal frequency over-shoot


    OCR Scan     		25MHz 400MHz) 9429a SY89429 400MHz AN-06) 28-pin SY89429A 9429a PDF

    IRG4IBC30S

    Abstract: No abstract text available
    Text: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30S O-220 IRG4IBC30S PDF

    IRF6216

    Abstract: AN1001 9429
    Text: PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


    Original     		IRF6216 AN1001) -150V IA-48 IRF6216 AN1001 9429 PDF

    IRG4IBC30S

    Abstract: No abstract text available
    Text: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30S O-220 IRG4IBC30S PDF

    IRHNJ57133SE

    Abstract: SMD 365A
    Text: PD - 94294B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides


    Original     		94294B IRHNJ57133SE IRHNJ57133SE MIL-STD-750, MlL-STD-750, SMD 365A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94298 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated


    Original     		35CGQ045 35Apk, 35CGQ045 O-254AA MIL-PRF-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94294A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides


    Original     		4294A IRHNJ57133SE MIL-STD-750, MlL-STD-750, PDF

    IRF 810

    Abstract: AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer
    Text: PD - 94296 IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		IRFR12N25D IRFU12N25D AN1001) AN-994. IRF 810 AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer PDF

    IRF (10A) 55V

    Abstract: IRF5M3205
    Text: PD - 94292A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3205 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3205 55V RDS(on) 0.015Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		4292A O-254AA) IRF5M3205 IRHM57163SED IRHM57163SEU MIL-PRF-19500 IRF (10A) 55V IRF5M3205 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		4296A IRFR12N25D IRFU12N25D AN1001) AN-994. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA100NA60U 20kHz 08-Mar-07 PDF

    mosfet 1200V 40A

    Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
    Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.


    Original     		IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA mosfet 1200V 40A 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A PDF