Untitled
Abstract: No abstract text available
Text: ADS5271 SBAS313 − JUNE 2004 8-Channel, 12-Bit, 50MSPS ADC with Serial LVDS Interface The device is available in a PowerPAD TQFP-80 package and is specified over a −40°C to +85°C operating range. LCLKN PLL IN5P IN5N The ADS5271 is a high-performance, 50MSPS, 8-channel,
|
Original
|
ADS5271
SBAS313
12-Bit,
50MSPS
12-Bit
936mW
10MHz
TQFP-80
|
PDF
|
ADS527x
Abstract: ADS5270 ADS5271 ADS5272
Text: ADS5270 ADS5271 ADS5272 SBAS293 − JANUARY 2004 8-Channel, 12-Bit, 40/50/65MSPS ADC with Serialized LVDS Interface FEATURES The ADS527x provide internal references, or can optionally be driven with external references. Best performance can be achieved through the internal reference mode.
|
Original
|
ADS5270
ADS5271
ADS5272
SBAS293
12-Bit,
40/50/65MSPS
ADS527x
40MSPS
ADS5270)
ADS5270
ADS5271
ADS5272
|
PDF
|
HS6664RH programming
Abstract: HS9-6664RH CDFP3-F28 D-10 HS1-6664RH HS-6664RH HS-6664 hs1-6664
Text: HS-6664RH Radiation Hardened 8K x 8 CMOS PROM September 1995 Features Pinouts • 1.2 Micron Radiation Hardened Bulk CMOS 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW 5 • Total Dose 3 x 10 RAD Si • Transient Output Upset >5 x 108 RAD (Si)/s
|
Original
|
HS-6664RH
MIL-STD-1835,
CDIP2-T28
HS6664RH programming
HS9-6664RH
CDFP3-F28
D-10
HS1-6664RH
HS-6664RH
HS-6664
hs1-6664
|
PDF
|
CDFP3-F28
Abstract: D-10 HS1-6664RH HS-6664RH HS9-6664RH HS-6664RH Application Note
Text: HS-6664RH S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM September 1995 Features Pinouts • 1.2 Micron Radiation Hardened Bulk CMOS 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW 5 • Total Dose 3 x 10 RAD Si • Transient Output Upset >5 x 108 RAD (Si)/s
|
Original
|
HS-6664RH
MIL-STD-1835,
CDIP2-T28
HS-6664RH
CDFP3-F28
D-10
HS1-6664RH
HS9-6664RH
HS-6664RH Application Note
|
PDF
|
MSC23V23258D
Abstract: MSC23V23258D-60BS4 MSC23V23258D-70BS4
Text: This version: Apr. 13. 1999 Semiconductor MSC23V23258D-xxBS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V23258D-xxBS4 is a 2,097,152-word x 32-bit CMOS dynamic random access memory module which is composed of four 16Mb 1Mx16 DRAMs in TSOP packages mounted with four decoupling capacitors. This is an
|
Original
|
MSC23V23258D-xxBS4
152-word
32-bit
MSC23V23258D-xxBS4
1Mx16)
100-pin
MSC23V23258D
MSC23V23258D-60BS4
MSC23V23258D-70BS4
|
PDF
|
EE-229
Abstract: ADSP-BF531 ADSP-BF532 ADSP-BF533 DYN400 DYN600
Text: Engineer-to-Engineer Note a EE-229 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at dsptools.support@analog.com Or visit our on-line resources http://www.analog.com/ee-notes and http://www.analog.com/processors
|
Original
|
EE-229
ADSP-BF533
ADSP-BF531/ADSP-BF532/ADSP-BF533
EE-229)
EE-228)
EE-229
ADSP-BF531
ADSP-BF532
DYN400
DYN600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a HS-6664RH HARRIS SEMICONDUCTOR PRELIMINARY Radiation Hardened 8K x 8 CMOS PROM January 1994 Features Pinouts 1.2 Micron Radiation Hardened Bulk CMOS Total Dose 3 x 10s RAD Si Transient Output Upset >1 x 10 RAD (Siys Single Event Upset < 1 x 10*1° Errors/Bit-Day
|
OCR Scan
|
HS-6664RH
15mA/MHz
HS-6664RH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fS Ì HS-6664RH H A F R F R IS S E M I C O N D U C T O R Radiation Hardened 8K X 8 CMOS PROM September 1995 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 105 RAD Si
|
OCR Scan
|
HS-6664RH
MIL-STD-1835,
CDIP2-T28
130B371
D0t34ba
HS-6664RH
00b34b^
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day
|
OCR Scan
|
r1992
HS-65647RH
100mA
313x291
|
PDF
|
Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10C494-15 65536-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10C494 it fully decoded 65536 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is organized
|
OCR Scan
|
MBM10C494-15
65536-BIT
MBM10C494
28-pin
28-LEAD
DIP-28C-A06)
28016S
|
PDF
|
MH25609AJ-85
Abstract: No abstract text available
Text: M IT S U B IS H I LSIs MH25609AJ-85, -10,-12/ MH25609AJ A-85,-10,-12 M O D E 2 6 2 1 4 4 -W O R D B Y 9 - B IT D Y N A M IC R A M DESCRIPTIO N PIN C O N F IG U R A T IO N TOP VIE W The M H25609AJ, AJA is 262144 word x 9 bit dynamic RAM and consists of two industry standard 256K x 4
|
OCR Scan
|
MH25609AJ-85,
MH25609AJ
262144-WORD
MH25609AJ,
MH25609AJA
12/MH25609AJA-85,
MH25609AJ-85
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 wor/js by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.
|
OCR Scan
|
MC-42S1000LAD32S
32-BIT
42S18160L)
0Q557bl
b427S25
|
PDF
|
TIS25
Abstract: No abstract text available
Text: MITSUBISHI LSIs b 2 4 T ñ 2 S QOl.Sûia a M H 2 5 6 0 9 A J- 8 5 ,- 1 0 ,- 1 2 / M H 2 5 6 0 9 A J A -8 5 ,- 1 0 ,-1 2 PAGE MODE 2 6 2 1 4 4 -W O R D BY 9 -B IT DYNAMIC RAM MIT SUB ISHI DESCRIPTION T-46-23-17 RAM and consists of tw o industry standard 256K x 4
|
OCR Scan
|
MH25609AJ,
T-46-23-17
la144-WORD
TIS25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HS-6664RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM August 1994 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10s RAD Si
|
OCR Scan
|
HS-6664RH
MIL-STD-1835,
CDIP2-T28
HS-6664RH
M3G2271
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: H A R R HS-65647RH I S S E M I C O N D U C T O R Radiation Hardened 8K x 8 SO S CM O S Static RAM December 1992 Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 1 0 s RAD SI - Transient Upset >1 x 1011 RAD (Siys _ ROW
|
OCR Scan
|
HS-65647RH
128X512
100mA
HS-65643RH
297x310x21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 worjds by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.
|
OCR Scan
|
MC-42S1000LAD32S
32-BIT
42S18160L)
42S1000LAD32S-\\\\\\\\\
|
PDF
|