1N4148
Abstract: diode din 4148 1N4148.1N4448 1N4448 1N914 1N914B 1N4148 diode 1N4148TR
Text: 1N4148.1N4448 Vishay Semiconductors Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation
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1N4148
1N4448
1N4148
1N914
1N914B
100mA
diode din 4148
1N4148.1N4448
1N4448
1N914
1N914B
1N4148 diode
1N4148TR
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Untitled
Abstract: No abstract text available
Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148
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1N4148
1N4448
1N4148
1N914
1N914B
100mA
1N4148â
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1N4148.1N4448
Abstract: 1N4148.TR 1N4148TA vishay 1N4148.1n4448 fast recovery diode 54
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148-TAP
1N4148.1N4448
1N4148.TR
1N4148TA
vishay 1N4148.1n4448
fast recovery diode 54
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BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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BAY80
01-Apr-99
D-74025
BAY80
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1N4148.1N4448
Abstract: din 4148 1N4148 1N4448 1N914 1N914B
Text: 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage
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1N4148
1N4448
1N4148
1N914
1N914B
D-74025
12-Dec-94
1N4148.1N4448
din 4148
1N4448
1N914
1N914B
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1N4148.1N4448
Abstract: 1N4148.TR 1N4148TA
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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Original
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148-TAP
1N4148.1N4448
1N4148.TR
1N4148TA
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PDF
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BAY135
Abstract: BAY13
Text: BAY135 TELEFUNKEN Semiconductors Silicon Planar Diode Features D Very low reverse current Applications Protection circuits, delay circuits 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Symbol Value Unit Peak reverse voltage, non repetitive
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BAY135
D-74025
BAY135
BAY13
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1N4151
Abstract: 1n4151 VISHAY
Text: 1N4151 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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1N4151
01-Apr-99
D-74025
1N4151
1n4151 VISHAY
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BAS33
Abstract: BAS34
Text: BAS33.BAS34 Vishay Telefunken Silicon Planar Diodes Features D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage
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BAS33
BAS34
BAS33
01-Apr-99
D-74025
BAS34
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diode din 4148
Abstract: vishay 1N4148 1N4148.1N4448 1N4148 1N4448 1N914 1N914B
Text: 1N4148.1N4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage
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Original
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1N4148
1N4448
1N4148
1N914
1N914B
D-74025
01-Apr-99
diode din 4148
vishay 1N4148
1N4148.1N4448
1N4448
1N914
1N914B
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BAW76
Abstract: No abstract text available
Text: BAW76 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BAW76
01-Apr-99
D-74025
BAW76
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PDF
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BAW75
Abstract: No abstract text available
Text: BAW75 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BAW75
01-Apr-99
D-74025
BAW75
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PDF
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Telefunken
Abstract: 9154 1N4154 telefunken 1n4154
Text: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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1N4154
01-Apr-99
D-74025
Telefunken
9154
1N4154
telefunken 1n4154
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BAY80
Abstract: No abstract text available
Text: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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BAY80
12-Dec-94
D-74025
BAY80
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PDF
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BAW76
Abstract: No abstract text available
Text: BAW76 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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BAW76
D-74025
12-Dec-94
BAW76
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PDF
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BAT86S
Abstract: No abstract text available
Text: BAT86S Vishay Semiconductors Small Signal Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Order Instruction Type
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BAT86S
BAT86S
20mprove
D-74025
12-Feb-01
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1N4148.1N4448
Abstract: 1N4148.TR
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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Original
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148-TAP
1N4148.1N4448
1N4148.TR
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PDF
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1N4150
Abstract: No abstract text available
Text: 1N4150 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings
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1N4150
TLx25
D-74025
1N4150
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1N4148 equivalent
Abstract: 1N4148.1N4448 1N914 1N914B 1N4148 1N4448 diode din 4148 din 4148
Text: 1N4148.1N4448 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage
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Original
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1N4148
1N4448
1N4148
1N914
1N914B
TLx25
D-74025
1N4148 equivalent
1N4148.1N4448
1N914
1N914B
1N4448
diode din 4148
din 4148
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SD103A
Abstract: SD103B SD103C
Text: SD103A–SD103C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications 94 9367 HF–Detector Protection circuit
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SD103A
SD103C
SD103A
IF20mA
SD103B
SD103B
SD103C
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Untitled
Abstract: No abstract text available
Text: SD101A / 101B / 101C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 94 9367 HF-Detector
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SD101A
DO-35
SD101B
SD101C
D-74025
10-Mar-04
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT85S VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Mechanical Data
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BAT85S
DO-35
BAT85S
BAT85S-TAP
BAT85S-TR
D-74025
31-Mar-04
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PDF
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vishay 1N4148
Abstract: 1N4148.TR 1N4148.1N4448 1N4148 silicon diodes 1N4148 vishay 1N4148 1N4148-TAP 1N4148-TR 1N4448 1N4448-TAP
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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Original
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148
1N4148-TAP
1N4148-TR
vishay 1N4148
1N4148.TR
1N4148.1N4448
1N4148 silicon diodes
1N4148 vishay
1N4148-TR
1N4448-TAP
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PDF
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1N4148 telefunken
Abstract: No abstract text available
Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148
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1N4148
1N4448
1N4148
1N914
1N914B
1N4448
100mA
1N4148 telefunken
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