512k x 8 chip block diagram
Abstract: 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM
Text: 2M x 32 SRAM MODULE SYS322000ZK-015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000ZK is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin ZIP package, organised as 2M x 32. The module
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SYS322000ZK-015/020/025
SYS322000ZK
64Mbit
SYS322000ZKI-15
512k x 8 chip block diagram
512K x 8 bit sram 32 pin
2M x 32 chip block diagram
512k x 8 SRAM
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Untitled
Abstract: No abstract text available
Text: 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 0191 2590997 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM
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SYS322000LKXA
64Mbit
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SOJ40
Abstract: msm514265c
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0027-17-41
MSM514265C/CSL
MSM514265C/CSL
144-Word
16-Bit
MSM514265C/CSLCMOS262
41CMOS
40SOJ44/40TSOP
5128ms512128msSL
40400milSOJ
SOJ40
msm514265c
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935m
Abstract: SM98-PS-U25A-H
Text: Pump Laser Modules KeyFeatures 850mW operating power Epoxy free design inside the Butterfly module for long term Reliability Extended temperature range -5°C to 75°C Fiber Bragg Grating (FBG) stabilized with PM pigtail RoHS 6/6 Applications High output power Low noise
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850mW
935mW
980nm
14-pin
850mW.
incorp00
850mW
935m
SM98-PS-U25A-H
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SOJ40
Abstract: No abstract text available
Text: J2G0027-17-41 作成：1998年 1月 MSM514265C/CSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM514265C/CSL 262,144-Wordx16-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM514265C/CSLはCMOSプロセス技術を用いた262,144ワ−ド×16ビット構成のダイナミックランダ
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J2G0027-17-41
MSM514265C/CSL
MSM514265C/CSL
144-Word
16-Bit
MSM514265C/CSLCMOS262
41CMOS
40SOJ44/40TSOP
5128ms512128msSL
40400milSOJ
SOJ40
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64mbit 72-pin simm
Abstract: 72-pin simm 2m x 32 SRAM SIMM
Text: hmp 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 0191 2590997 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM
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SYS322000LKXA
32bit
935mW
64Mbit
AI-15
64mbit 72-pin simm
72-pin simm
2m x 32 SRAM SIMM
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SM98-PS-U25A-H
Abstract: No abstract text available
Text: Pump Laser Modules KeyFeatures 850mW operating power Extended temperature range -5°C to 75°C Fiber Bragg Grating (FBG) stabilized with PM pigtail RoHS 6/6 compliant Applications High output power Low noise Erbium-doped Fiber Amplifier (EDFA) Next Generation EDFAs
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850mW
935mW
980nm
14-pin
850mW.
back00
850mW
SM98-PS-U25A-H
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512k x 8 chip block diagram
Abstract: TSOP II 54 64mbit 72-pin simm
Text: 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM
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SYS322000LKXA
64Mbit
512k x 8 chip block diagram
TSOP II 54
64mbit 72-pin simm
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HY514260B
Abstract: hy514260bjc HY514260
Text: HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514260B
256Kx16,
16-bit
16-bits
256Kx16
HY514260B
hy514260bjc
HY514260
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SOJ40
Abstract: msm514260c
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0026-17-41
MSM514260C/CSL
MSM514260C/CSL
144-Word
16-Bit
MSM514260C/CSLCMOS262
41CMOS
40SOJ44/40TSOP
5128ms512128msSL
40400milSOJ
SOJ40
msm514260c
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SOJ40
Abstract: No abstract text available
Text: J2G0026-17-41 作成：1998年 1月 MSM514260C/CSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM514260C/CSL 262,144-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM514260C/CSLはCMOSプロセス技術を用いた262,144ワ−ド×16ビット構成のダイナミックランダ
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J2G0026-17-41
MSM514260C/CSL
MSM514260C/CSL
144-Word
16-Bit
MSM514260C/CSLCMOS262
41CMOS
40SOJ44/40TSOP
5128ms512128msSL
40400milSOJ
SOJ40
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514260B
256KX16,
16-bit
16-bits
256Kx16
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CXK581020AJ
Abstract: CXK581020AJ-25 32PIN CXK581020AJ-20 CXK58102QAJ scu32
Text: SONY CXK581020AJ 131072-words x 8-bits High Speed CMOS Static RAM Description The CXK581020AJ is a high speed CM O S static 32 pin S O J Plastic RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply. The CXK581020AJ is suitable for use in high
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131072-words
CXK581020AJ
20ns/25ns
CXK581020AJ-20
CXK581020AJ-25
990mW
32PIN
CXK58102QAJ
scu32
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.
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MSM514280
144-Word
18-Bit
MSM514280/SL
18-bit
cycles/128ms
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schottky CST
Abstract: tc5117805
Text: TOSHIBA TC5117805CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117805CJ/CFT/CST is an EDO (hyper page) dynamic RAM organized as 2,097,152 words by 8 bits.
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TC5117805CJ/CFT/CST-50
152-WORD
TC5117805CJ/CFT/CST
28-pin
TC5117805CJ/CFT/CST-24
SOJ28
schottky CST
tc5117805
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GMM79256NS-70/80/10
Abstract: No abstract text available
Text: GoldStar GMM79256NS-70/80/10 262,144 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO, LTD. Description Features The GMM79256NS is a 256K x9 bits Dynamic RAM Module, mounted 2 pieces of 1M bit DRAM GM71C4256ASJ, 256K x4 sealed in 20 pin SOJ package and a 256K bit DRAM (GM71C256A, 2 5 6 K x l) in 18 pin PLCC package. The
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GMM79256NS-70/80/10
GMM79256NS
GM71C4256ASJ,
GM71C256A,
GM71C4256ASJ
GMM79256NS
GMM79256NS-70/80/10
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Untitled
Abstract: No abstract text available
Text: mosaic 2M x 32 SRAM MODULE semiconductor, inc. SYS322000ZK-015/020/025 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 1.2 : April 1999 Fax No: (619) 674 2230 Description Features The SYS322000ZK is a plastic 64Mbit Static
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SYS322000ZK-015/020/025
SYS322000ZK
64Mbit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
428000A32-60
428000A32-70
cycles/32
72-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
110ns
428000A32-60
428000A32-70â
b457525
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514260b
Abstract: 514260 M5M51426 msm514260b
Text: O K I Sem iconductor MSM514 2 6 0 B /B S L 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M 5M 514260B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514260B/BSL is OKI's CMOS silicon gate process
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MSM514260B/BSL
144-Word
16-Bit
M5M514260B/BSL
MSM514260B/BSL
128ms
514260b
514260
M5M51426
msm514260b
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CXK581020A
Abstract: CXK581020AJ-25 SCU032-P-C400-A
Text: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.
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81020A
131072-words
CXK581020AJ
20ns/25ns
CXK581Q20AJ-20
CXK581020AJ-25
CXK581020AJ-20
990mW
CXK581020A
SCU032-P-C400-A
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514280
Abstract: ZIP40-P-475
Text: O K I Semiconductor M S M 5 1 4 2 8 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.
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MSM514280/SL_
144-Word
18-Bit
MSM514280/SL
128ms
514280
ZIP40-P-475
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Untitled
Abstract: No abstract text available
Text: »flYUNDA» > - • HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60
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HY514260B
256Kx16,
16-bit
16-bits
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