12v to 240v PWM inverter circuit
Abstract: 240v n-channel depletion mosfet HV9120 4k resistor 50w "SMPS Controller" 12v to 240v inverter HV9120NG-G P-Channel Depletion Mosfet datasheet HV9120NG HV9120P
Text: HV9120 High-Voltage, Current-Mode PWM Controller Features ► ► ► ► ► ► A unique input circuit allows the 9120 to self-start directly from a high voltage input, and subsequently take the power to operate from one of the outputs of the converter it is
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HV9120
DSFP-HV9120
A120308
12v to 240v PWM inverter circuit
240v n-channel depletion mosfet
HV9120
4k resistor 50w
"SMPS Controller"
12v to 240v inverter
HV9120NG-G
P-Channel Depletion Mosfet datasheet
HV9120NG
HV9120P
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4.7uF 400V capacitor
Abstract: capacitor 0.47uf 400v 100n ceramic capacitor 100V R11M2 capacitor c5 0.47uf 400v 100V schottky diode capacitor 0.1uf 400v resistor 1M 1uF 400V capacitor C9 0.1uf 200v
Text: +13.5V to +16.5V VIN C5 4.7uF 25V 1 R1 1M 2 C1 0.47uF 8 SYNC 16 C2 39nF 3 R3 150k R4 300kHz 33k 4 5 Vin 16.67 15.05 13.33 D1 10MQ 100N D2 CMR1U EXT -04 P1 4 7 2 IRFR 1,12 8,10 9120 9,11 C8 0.6 Ohm 3,5 0.1uF T1 R6 200V 6 1:2 13 100 Lpri=48.8uH CS VP1-0190
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300kHz)
VP1-0190
330uH
1008PS
-334M
-180V
470pF
MAX1847
TMK325BJ475MN
4.7uF 400V capacitor
capacitor 0.47uf 400v
100n ceramic capacitor 100V
R11M2
capacitor c5 0.47uf 400v
100V schottky diode
capacitor 0.1uf 400v
resistor 1M
1uF 400V capacitor
C9 0.1uf 200v
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Untitled
Abstract: No abstract text available
Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance High Speed Switching BVDSS 300V RDS ON 66m ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of
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AP80N30W
AP80N30
O-220
100ms
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Untitled
Abstract: No abstract text available
Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of
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AP80N30W
AP80N30
O-220
100us
100ms
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80N30W
Abstract: 80N30
Text: Advanced Power Electronics Corp. AP80N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 66mΩ ID 36A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP80N30W-HF-3
AP80N30W-HF-3
AP80N30
80N30W
80N30W
80N30
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80N30W
Abstract: AP80N30W
Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 88A S Description AP80N30 from APEC provide the designer with the best combination of fast
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AP80N30W
AP80N30
O-220
80N30W
80N30W
AP80N30W
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AON6403L
Abstract: FR 9120 aon6403
Text: AON6403L P-Channel Power Transistor General Description Product Summary The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON6403L
AON6403L
FR 9120
aon6403
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AON6403
Abstract: No abstract text available
Text: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON6403
AON6403
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Untitled
Abstract: No abstract text available
Text: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON6403
AON6403
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1rfd9120
Abstract: IRFD9120 00LQ
Text: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =
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IRFD9120
-100v
0-60Q
150KQ
1rfd9120
00LQ
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HV9111
Abstract: hv9120pj
Text: H V9110 in O m HV9111 H V 9120 Preliminary High-Voltage Switchmode Controllers Ordering Information_ Feedback + V IN Min Max 10V Voltage 120 V 10V 120 V ±1% ±10% Package Options Package Pins Plastic DIP Ceramic DIP 14 HV9110P
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V9110
HV9111
HV9110P
HV9111P
HV9110C
HV9111C
HV9110PJ
HV9111PJ
HV9120P
HV9120C
HV9111
hv9120pj
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Untitled
Abstract: No abstract text available
Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H
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IRFF9120,
IRFF9121,
IRFF9122
IRFF9123
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IRF9240
Abstract: IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132
Text: TH On SON / D I S T R I B U T O R SflE D TCSK Power MOSFETs Rugged-Series Power MOSFETs — P-Channel P aci ag e — • M axim u r n R a tin g s bvdss (V 60 100 150 20 0 <d s (A) r DS(O N) O HM S e AS (m i) 0.6 0.8 2.5 3 3.5 4 5 5.5 6 6.5 10 12 19 15 25
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O-204
O-205
T0-220
O-247
irfd9113
irfd9123
irf9513
irf9511
irff9123
irff9121
IRF9240
IRF9143
IRF9513
IRF9632
irf9243
2n6804
IRF9241
IRF9511
IRFD9110
IRF9132
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STF6045DV
Abstract: BD405 transistor b 1185 BD 149 transistor
Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL
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DG30SDb
STF6045DF
STF6045DV
O-240)
PC-029«
STF6045DV
BD405
transistor b 1185
BD 149 transistor
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IRFD9123
Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Text: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:
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IRFD9120
IRFD9123
92CS-43262
IRFD9120
IRFD9123
92CS-43279
MOSFET IRFd9120
44202
FR 9120
irfd
92QS-44168
92GS-4420Z
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1rfd9120
Abstract: No abstract text available
Text: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI
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IRFD9120
IRFD9123
JRFD9120,
1rfd9120
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IRF9120
Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET
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IRF9120/912110122/9123
IRFP9120/9121
IRF9520/9521
D0054DE
IRF/IRFP9120,
IRF9520
IRF/IRFP9121,
IRF9521
IRF/IRFP9122,
IRF9522
IRF9120
IRFP9120
IRF9120 mosfet
IRF9121
IRF 9520
IRF 9120
IRF912213
IRF 9122
IRFP9121
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axc differential amplifier
Abstract: SI9120 an708 BUZ78
Text: Tem ic SÌ9120 Semiconductors Universal Input Switchmode Controller Features • 10- to 450-V Input Range • Current-Mode Control • 125-mA Output Drive • Internal Start-Up Circuit • Internal Oscillator 1 MHz • SHUTDOWN and RESET Description The SÌ9120 is a BiC/DMOS integrated circNQTAGuit
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125-mA
450-VDC)
500-pF
IRF820,
BUZ78
BUZ80.
AN707
AN708
S-54622--
10-Nov-97
axc differential amplifier
SI9120 an708
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IRF09120
Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP
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T-37-25
IRFD9120
IRFD91S3
C-169
IRFD9120,
IRFD9123
C-170
IRF09120
RFD9120
IRFD9120 N CHANNEL
fd9120
MOSFET IRFd9120
Power MOSFET in a HEXDIP package
IRFD 9120
tc 9123
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Untitled
Abstract: No abstract text available
Text: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n
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003QSC
TSD20N1
TSD20N100V
TSD20N100F/V
O-240)
PC-029«
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schematic diagram UPS
Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS
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TSD180N1
TSD180N1OV
TSD180N10F/V
C045S0
T-91-20
O-240)
schematic diagram UPS
TSD180N10V
k 815 MOSFET
smps&ups
TSD180N10F
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TSD40N50DV
Abstract: aval d 317 transistor
Text: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH
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TSD40N50DF
TSD40N50DV
O-240)
PC-029«
TSD40N50DV
aval
d 317 transistor
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SD 1496 transistor
Abstract: TSD2M350F
Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE
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QG3D534
TSD2M350F
TSD2M350V
TSD2M350F/V
T-91-20
O-240)
PC-029«
SD 1496 transistor
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Untitled
Abstract: No abstract text available
Text: 3ÜE D r r j Ä 7# “Y~fi m 712q237 OOBObgg M • " ~ p CTM<? S G S -T H O M S O N WlE ô [lLieïïE(ô)B!]DOS B Y T 2 3 0 P l(V ) - 1 2 0 0 S-THÖMS0N FAST RECOVERY RECTIFIER DIODE ■ VERY HIGH REVERSE VOLTAGE CAPABILI TY ■ VERY LOW REVERSE RECOVERY TIME
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712q237
PC-029Â
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