Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    90NM SST Search Results

    90NM SST Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    1212VS-90NMED Coilcraft Inc General Purpose Inductor, 0.09uH, 20%, Air-Core, 4745 Visit Coilcraft Inc
    1212VS-90NME Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    1212VS-90NMEB Coilcraft Inc General Purpose Inductor, 0.09uH, 20%, 1 Element, Air-Core, SMD, 4745, CHIP, 4745 Visit Coilcraft Inc

    90NM SST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12v inverter

    Abstract: 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CS101 10-Layer CHIP IPS serdes hsif
    Text: 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors • Advanced lithography and etch technology to achieve 40nm gate length • Low temperature process for shallow junction • Process optimization for high carrier mobility 9Cu/1Al interconnect


    Original     		PDF CS101 10-layer CS101HU WFS-FS-20164-9/2004 12v inverter 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CHIP IPS serdes hsif

    ARM1136JF

    Abstract: samsung serdes Programmable Interrupt Controllers ARM1020E SMART ASIC bga ARM1026EJ ARM920T ARM926EJ ARM940T ARM968E
    Text: ASIC Solutions Advanced technologies and a full range of services to optimize your products Part of Your Design Team Samsung delivers a total solution including 90nm design expertise, an unequalled IP portfolio, high-volume silicon manufacturing, and advanced packaging and testing


    Original     		PDF 300MHz 16-bit 14-bit BRO-06-ASIC-001 ARM1136JF samsung serdes Programmable Interrupt Controllers ARM1020E SMART ASIC bga ARM1026EJ ARM920T ARM926EJ ARM940T ARM968E

    NT5DS32M16CS-5T

    Abstract: NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG
    Text: NT5DS32M16CS NT5DS64M8CS / NT5DS64M8CG NT5DS128M4CS 512Mb DDR SDRAM Feature z DLL aligns DQ and DQS transitions with CK transitions z DDR 512M bit, Die C, based on 90nm design rules z Double data rate architecture: two data transfers per clock cycle


    Original     		PDF NT5DS32M16CS NT5DS64M8CS NT5DS64M8CG NT5DS128M4CS 512Mb NT5DS32M16CS-5T NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG

    Untitled

    Abstract: No abstract text available
    Text: NT5DS128M4CG 512Mb DDR SDRAM C-Die Preliminary Features • • • • • CAS Latency and Frequency CAS Latency 3 Maximum Operating Frequency MHz DDR400 (5T) 200 • DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per


    Original     		PDF NT5DS128M4CG 512Mb DDR400

    DDR400

    Abstract: PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		PDF NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T) DDR400 PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T

    Untitled

    Abstract: No abstract text available
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		PDF NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T)

    Untitled

    Abstract: No abstract text available
    Text: Intel Pentium® M Processor on 90nm Process with 2-MB L2 Cache Datasheet May 2004 Order Number: 302189-001 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF

    180-nm CMOS standard cell library inverter

    Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
    Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents „ „ „ Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006


    Original     		PDF 130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201

    Untitled

    Abstract: No abstract text available
    Text: Mobile Intel Pentium® 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology Datasheet September 2004 Document Number: 302424-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY


    Original     		PDF 90-nm

    mPGA479

    Abstract: manual mpga478b motherboard mPGA478A ITP700 AF23 IERR
    Text: Mobile Intel Pentium® 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology Datasheet January 2005 Document Number: 302424-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY


    Original     		PDF 90-nm mPGA479 manual mpga478b motherboard mPGA478A ITP700 AF23 IERR

    CS200

    Abstract: 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring
    Text: 65nm CMOS Standard Cell Leakage Current Large CS200 ASIC Series Server/ Network Low Power Power Low Lineup Lineup CS200LL CS200A HV-Tr DHV-Tr HS-Tr Mo C Mobile STD-Tr STD-Tr LL-Tr Computing High End Server HighHigh Performance Performance Lineup LineupCS200HP


    Original     		PDF CS200 CS200LL CS200A CS200HP CS200 12-layer 10-bit 33MS/s 1110MS/s 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring

    DDR2 SDRAM

    Abstract: DDR2 TSOP II elpida ELPIDA DDR2 DDR2-400 DDR2-533 DDR2-667 90nm-based 256Mx4 80nm
    Text: DDR2 SDRAM Feature Comparison of DDR2 SDRAM, DDR SDRAM and SDRAM DDR2 SDRAM 200/266/333/400MHz 400/533/667/800Mbps x4/x8/x16 4bits Differential clock 4, 8 Differential data strobe 1.8V SSTL_18 3, 4, 5 clock AL+CL AL+CL -1 0, 1, 2, 3, 4 clock Support Support


    Original     		PDF 200/266/333/400MHz 400/533/667/800Mbps x4/x8/x16 100/133/166/200MHz 200/266/333/400Mbps x4/x8/x16/x32 800Mbps* DDR2-667 DDR2-533 DDR2-400 DDR2 SDRAM DDR2 TSOP II elpida ELPIDA DDR2 DDR2-400 DDR2-533 DDR2-667 90nm-based 256Mx4 80nm

    k225

    Abstract: K-225 NiSi PCI-Express 2.0 CS-300H
    Text: High-Performance Semiconductor Manufacturing Services Engagement Models ASIC Fujitsu’s Mie Factory COT Library IP Design Wafer Process 300mm fabs PT Assembly FT Pure ASIC TGD* ASIC *Tested Good Die COT + Design Service COT w/ Pure COT IP Support ▼ Fujitsu


    Original     		PDF 300mm 10Gbps/lane) SMS-FS-21288-1/2008 k225 K-225 NiSi PCI-Express 2.0 CS-300H

    pressure sensor MATLAB program

    Abstract: actel rad pressure sensor 90nm cmos RTAX250S-1000S
    Text: A passion for performance. Digital and Mixed-Signal custom, semi-custom, off-the-shelf designs with Aeroflex Gaisler IP Guaranteed radiation performance QML-V, QML-Q, military, medical, industrial grades Category 1A Trusted Accreditation We connect the real


    Original     		PDF 0E-10 pressure sensor MATLAB program actel rad pressure sensor 90nm cmos RTAX250S-1000S

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga

    ARM1176JZ-S

    Abstract: ARM1176JZ ARM11 mpcore ETM11 H.264 encoder ethernet tabels Cortex-A8 sublvds ARM11 ARM1136J-S
    Text: Samsung Semiconductor Foundry Design Expertise, Leading-Edge Processes, Comprehensive Service and Capacity Assurance to Enable Rapid Production of Advanced Logic ICs The Best of Both Worlds: IDM and Pure-Play Foundry For fabless semiconductor companies staking their


    Original     		PDF BRO-06-SLSI-002 ARM1176JZ-S ARM1176JZ ARM11 mpcore ETM11 H.264 encoder ethernet tabels Cortex-A8 sublvds ARM11 ARM1136J-S

    samsung serdes

    Abstract: samsung edram samsung ARM11 ARM1176JZ ARM1136J-S ibm edram ARM1176JZ-S K4H560838E-TLB0 sublvds SAMSUNG SRAM
    Text: Samsung Semiconductor Foundry Design Expertise, Leading-Edge Processes, Comprehensive Service and Capacity Assurance to Enable Rapid Production of Advanced Logic ICs The Best of Both Worlds: IDM and Pure-Play Foundry For fabless semiconductor companies staking their


    Original     		PDF BRO-07-SLSI-001 samsung serdes samsung edram samsung ARM11 ARM1176JZ ARM1136J-S ibm edram ARM1176JZ-S K4H560838E-TLB0 sublvds SAMSUNG SRAM

    pressure sensor MATLAB program

    Abstract: CCGA 472 CCGA -CG 472 actel 1020 datasheet fpga radiation mixed signal fpga datasheet RH1020 actel rad pressure sensor 90nm cmos
    Text: A passion for performance. Digital and Mixed-Signal custom, semi-custom and off-the-shelf designs Guaranteed radiation performance QML-V, QML-Q, military, medical, industrial grades We connect the real world to the digital world RadHard ASICs Digital and Mixed-Signal


    Original     		PDF 25-year pressure sensor MATLAB program CCGA 472 CCGA -CG 472 actel 1020 datasheet fpga radiation mixed signal fpga datasheet RH1020 actel rad pressure sensor 90nm cmos

    VCO 100mhz

    Abstract: CRC-16 CRC-32 pci express lcrc CRC-16 and CRC-32 Ethernet LFSC115 LFSC15
    Text: E x t r e m e P e r f o r m a n c e P r o g r a m m a b l e S y s t e m - ON - A - C h i p LatticeSC FPGA Family Innovation, Integration, and PURESPEED The LatticeSC™ System Chip family of FPGAs combines a high-performance FPGA fabric, 3.8Gbps SERDES and PCS,


    Original     		PDF I0181F VCO 100mhz CRC-16 CRC-32 pci express lcrc CRC-16 and CRC-32 Ethernet LFSC115 LFSC15

    CCGA 472

    Abstract: pressure sensor MATLAB program CCGA -CG 472 rtax250 fpga radiation mixed signal fpga datasheet RH1280 RH1020
    Text: A passion for performance. Digital and Mixed-Signal custom, semi-custom, off-the-shelf designs Guaranteed radiation performance QML-V, QML-Q, military, medical, industrial grades Category 1A Trusted Accreditation We connect the real world to the digital world


    Original     		PDF 25-year CCGA 472 pressure sensor MATLAB program CCGA -CG 472 rtax250 fpga radiation mixed signal fpga datasheet RH1280 RH1020

    221-166

    Abstract: System On Chip XP2-17
    Text: Third Generation Non-Volatile FPGAs Enable System on Chip Functionality A Lattice Semiconductor White Paper June 2007 Lattice Semiconductor 5555 Northeast Moore Ct. Hillsboro, Oregon 97124 USA Telephone: 503 268-8000 www.latticesemi.com 1 Third Generation Non-volatile FPGAs Enable System on Chip Functionality


    Original     		PDF

    CEI-6G-LR

    Abstract: SSTL-18
    Text: A D V E R T O R I A L DesignPerspective Transceivers With Integrity. What is the Stratix II GX device family? The 90-nm Stratix II GX family is Altera’s third generation of FPGAs with embedded transceivers. Integrating up to 20 serializer/ deserializer SERDES -based transceivers,


    Original     		PDF 90-nm SSTL-18 CEI-6G-LR

    ep2c50f484

    Abstract: EP2C20F256 EP2C8F256 EP2C35F672 EP2C8F256 package TSMC 90nm sram EP2C5 pin table EP2C5F256 EP2C20F484 Cyclone II EP2C35
    Text: 1. Introduction CII51001-3.1 Introduction Following the immensely successful first-generation Cyclone device family, Altera® Cyclone II FPGAs extend the low-cost FPGA density range to 68,416 logic elements LEs and provide up to 622 usable I/O pins and up to 1.1 Mbits of embedded memory. Cyclone II FPGAs are


    Original     		PDF CII51001-3 300-mm 90-nm ep2c50f484 EP2C20F256 EP2C8F256 EP2C35F672 EP2C8F256 package TSMC 90nm sram EP2C5 pin table EP2C5F256 EP2C20F484 Cyclone II EP2C35

    TC58NVG2D4BFT00

    Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
    Text: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2004年5月号 5 VOLUME 142 四日市工場で最先端の NAND型フラッシュメモリ製造棟の建設を開始 .4 今月の新製品情報 4ギガビットNAND型フラッシュメモリ .2


    Original     		PDF 03-3457-3405FAX. TC58NVG2D4BFT00/TH58NVG3D4BFT00 TC58DVG14B1FT00 TC58NVG2D4BFT00 TH58NVG3D4BFT00 600s/ TC58NVG2D4BFT00 TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D SSTL18 th58nvg TMP86FS49UG