germanium power devices corporation
Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms
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GPDOS00004
MIL-45208
MIL-S-19500
MIL-S-19500.
MIL-STD-883,
germanium power devices corporation
GM8HS
InGaas PIN photodiode, 1550 NEP
Germanium power
diode germanium catalog
GM7VHR
gep800
ingaas apd photodetector
GM2HS
GM10HS
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GM10HS
Abstract: GM10HSCS GM6VHR GM7HS GM8HS GEP600 GEP800 GPD GM10BNC GEP700 GM2HS
Text: Small & Large Area pn, pin detectors Two-color detectors GPD OPTOELECTRONICS CORP. Germanium Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available • Filtered Windows for High Power Available • Standard and Custom Packages/Submounts
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MIL-I-45208.
GR-468-CORE)
MIL-STD-883
GM10HS
GM10HSCS
GM6VHR
GM7HS
GM8HS
GEP600
GEP800
GPD GM10BNC
GEP700
GM2HS
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Untitled
Abstract: No abstract text available
Text: GAP 500 GAP1000 GAP2000 GAP3000 □ Electrical Characteristics @ 25 °C GAP500 Active Diameter GAP 1000 GAP2000 GAP3000 mm 0.5 1.0 2.0 3.0 Responsivity @ 850nm 0.10 0.20 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)
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GAP1000
GAP2000
GAP3000
GAP500
GAP2000
850nm
1300nm
1550nm
MIL-45208
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Untitled
Abstract: No abstract text available
Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available GPD Optoelectronics Corp. GPDO S00007 Introduction/Glossary of Jerms G Introduction
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S00007
MIL-l-45208.
GR-468-CORE,
MIL-STD-883
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pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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BGA628L7
Abstract: No abstract text available
Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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BGA628L7
BGA628L7
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BGA628L7
Abstract: XPOSYS 628L C166 JESD22-A114 NF50
Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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BGA628L7
BGA628L7
XPOSYS
628L
C166
JESD22-A114
NF50
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CX111
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA V oltage Controlled M ultivibrator M C I 658 T h e M C 1658 is a vo lta g e -co n tro lle d m ultivib rato r w hich provides appropriate level shifting to prod u ce an o utp ut co m pa tib le w ith M E C L III and M EC L 10,000 logic levels. F requency control is accom plished
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16-Lead
MC1658
DL122
CX111
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Untitled
Abstract: No abstract text available
Text: Ge PHOTODETECTOR Specifications at Room Temperature TYPE ACTIVE DIA. mm GM2 GM2HS 0.5sq GM2VHS GM2VHR SHUNT RESISTANCE @ V r = 10 mv KG MIN TYP. 30 100 250 550 60 150 350 900 REVERSE VOLTAGE V . FOR TEST VOLTS 2.0 1.0 0.7 0.5 10 3 0.5 0.5 15 27 5 1 55 200
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50Qload
GEP600
GEP700
GEP800
55/na
110pf
D00DlaE4
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tba 450
Abstract: dc46a GUNN DIODE plessey
Text: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B
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DB3031
17dBmf
1-18GHz
tba 450
dc46a
GUNN DIODE plessey
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MC1658
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC1658 Voltage Controlled Multivibrator The MC1658 is a voltage–controlled multivibrator which provides appropriate level shifting to produce an output compatible with MECL III and MECL 10,000 logic levels. Frequency control is accomplished
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MC1658
MC1658
12DAMBAR
BR1334
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MC1658
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Voltage Controlled Multivibrator MC1658 The MC1658 is a voltage–controlled multivibrator which provides appropriate level shifting to produce an output compatible with MECL III and MECL 10,000 logic levels. Frequency control is accomplished
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MC1658
MC1658
13garding
BR1334
MC1658/D*
MC1658/D
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Untitled
Abstract: No abstract text available
Text: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP720F
BFP720F:
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mc1658
Abstract: No abstract text available
Text: MOTOROLA MC1658 Voltage Controlled Multivibrator VOLTAGE CONTROLLED MULTIVIBRATOR Pinout: 16–Lead Package Top View NC NC CX2 INF BIAS CX1 NC NC 16 15 14 13 12 11 10 9 L SUFFIX 16–LEAD CERAMIC PACKAGE CASE 620–10 Not Recommended for New Designs 1 2
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MC1658
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Untitled
Abstract: No abstract text available
Text: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP740FESD
BFP740FESD:
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Untitled
Abstract: No abstract text available
Text: BFP720FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP720FESD
BFP720FESD:
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Untitled
Abstract: No abstract text available
Text: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
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Untitled
Abstract: No abstract text available
Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP640FESD
BFP640FESD:
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MARKING CODE T7s
Abstract: MARKINGCODET7s
Text: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP740ESD
OT343
OT343-PO
OT343-FP
BFP740ESD:
OT323-TP
MARKING CODE T7s
MARKINGCODET7s
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Untitled
Abstract: No abstract text available
Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
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PDF
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keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
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SP1658
Abstract: SP1658BC plessey SP1658 plessey plessey capacitor SP-1658
Text: 1SE D PLESSEY SEMICONDUCTORS • 7E E0 51 3 0G1037Ö 0 éÊkSem PLESSEY iconductors, SP1658BC VOLTAGE-CONTROLLED MULTIVIBRATOR CONFORMS TO MIL-STD-883C CLASS B The SP1658 is a voltage-controlled multivibrator which provides appropriate level shifting to produce an output
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7EE0513
0G1037Ã
SP1658BC
MIL-STD-883C
SP1658
T-90-20
20-PIN
SP1658BC
plessey SP1658
plessey
plessey capacitor
SP-1658
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