BGA PACKAGE thermal profile powerpc motorola
Abstract: MPE603E7VECD Nippon capacitors freescale 132-CQFP
Text: Freescale Semiconductor, Inc. MPE603E7VEC/D Motorola Order Number 9/97 IN A RY Advance Information IM EC603e Embedded RISC Microprocessor Family: EL PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e
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MPE603E7VEC/D
EC603e
PID7v-EC603e
0007v
EC603e
PID7v-EC603e)
PID6-EC603e)
PID7v-EC603e.
BGA PACKAGE thermal profile powerpc motorola
MPE603E7VECD
Nippon capacitors
freescale 132-CQFP
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Untitled
Abstract: No abstract text available
Text: SECTION 9 NONLINEAR TRANSFORMERS 600 Volt Class K-Factor, Three Phase Harmonics Today Transformers for Non-Linear Loads . 196 Aluminum & Copper, NEMA 3R Features . 198 K Factor 4 Selection Tables . 199
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Untitled
Abstract: No abstract text available
Text: BX1320 IL08 DRUM AND CAPSTAN MOTOR DRIVE CONTROLLER —SIDE VIEW— _ + 1 2 CONT DM IN H IN VEE 3 4 5 CT IN 6 7 8 PWM 9 10 REF OFF OUT1 OUT2 VOLT SET OUT IN GND VCC 11 12 13 OUT3
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BX1320
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Motorola transistors MRF3104
Abstract: MRF3104 MRF3105 MRF3106
Text: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power
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MRF3104
MRF3105
MRF3106
MRF3104
MRF3105
MRF3104/D
Motorola transistors MRF3104
MRF3106
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339 Motorola
Abstract: 128kx8 1MX1 1MX4 motorola 32kx8
Text: Asynchronous CMOS Fast SRAMs 3.3 Volt Supply MCM6306D 32Kx8 . 3-112 5 Volt Supply MCM6205D MCM6206BA MCM6206D MCM6208C MCM6209C MCM6226A MCM6226B 32Kx9 .3-3 32Kx8 . 3-9
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MCM6306D
32Kx8
MCM6226BA
MCM6226BB
MCM6227A
MCM6227B
MCM6229A
MCM6229B
MCM6229BA
MCM6246
339 Motorola
128kx8
1MX1
1MX4
motorola 32kx8
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SMT A06 transistor
Abstract: EC603e OBG 88 Zo transistor h07 G30-88 G38-87 ABB ap 300
Text: MPE603E7VEC/D Motorola Order Number 9/97 Advance Information EC603e Embedded RISC Microprocessor Family: PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e microprocessor, abbreviated as PID7v-EC603e) and a 3.3-volt version (PID 0006 EC603e
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MPE603E7VEC/D
EC603e
PID7v-EC603e
0007v
PID7v-EC603e)
PID6-EC603e)
PID7v-EC603e.
SMT A06 transistor
OBG 88
Zo transistor h07
G30-88
G38-87
ABB ap 300
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Nippon capacitors
Abstract: 617-2455 cn/A/U 237 BG
Text: MPE603E7VEC/D Motorola Order Number 9/97 TM Advance Information EC603e Embedded RISC Microprocessor Family: PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e microprocessor, abbreviated as PID7v-EC603e) and a 3.3-volt version (PID 0006 EC603e
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MPE603E7VEC/D
EC603e
PID7v-EC603e
0007v
PID7v-EC603e)
PID6-EC603e)
PID7v-EC603e.
Nippon capacitors
617-2455
cn/A/U 237 BG
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DSCC 10 AMP, 6 0 V , 3 PHASE MOSFET BRUSHLESS MOTOR CONTROLLER M .S.KEN N EDY CORP. 4460 8 1 7 0 Thompson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 FEATURES: • • • • • • • • • • 60 Volt Motor Supply Voltage
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51343QQ
Q0005
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor . . . designed for 24 volt UHF large-signal, comm on-base amplifier applications in indu stria l and com m ercial FM equipm ent operating in the range of 8 0 4-9 60 MHz. • Specified 24 Volt, 900 M Hz Characteristics
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MRF894
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k 3919 ks 82
Abstract: k 2101 MOSFET k 3919 RF92 C380 O 7z mosfet IRF9Z20 IRF9Z22 T-39 TLA 1131
Text: HE D I MflSSMSE aaaflbBO 3 | Data Sheet No. PD-9.461 A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER II«R I T-39-19 HEXFET TRANSISTORS P-CHAIMNEL 5 0 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package IRF9ZSO IR F 9 Z 2 2 Product S u m m ary
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0flb30
T-39-19
T0-220AB
GS-10V
C-384
k 3919 ks 82
k 2101 MOSFET
k 3919
RF92
C380 O
7z mosfet
IRF9Z20
IRF9Z22
T-39
TLA 1131
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RF92
Abstract: IRF9Z22 7n20 k 3919 7z mosfet IRF9Z20 T-39
Text: H E 0 I Mä5S4S2 INTERNATIONAL □□Qöb30 3 | Data Sheet No. PD-9.461A RECTIFIER in t e r n a t io n a l r e c t if ie r I O R T -3 9 -1 9 H E X F E T T R A N S I S T O R IRF9Z20 IRF9ZSS S P-CHAN1MEL 50 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package
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T-39-19
T0-220AB
C-384
RF92
IRF9Z22
7n20
k 3919
7z mosfet
IRF9Z20
T-39
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Motorola UHF Power Amplifier Module
Abstract: MHW812A3 301H W812 LXJ capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M H W 812A 3 The RF Line U H F P ow er A m p lifier . . . designed for 13 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 890 to 915 MHz. • 12 W, 8 9 0 -9 1 5 MHz HIGH GAIN RF POWER
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EB-107.
Motorola UHF Power Amplifier Module
MHW812A3
301H
W812
LXJ capacitor
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Untitled
Abstract: No abstract text available
Text: November 1 9 % PRELIM IN ARY Micro Linear ML6035 5V Spindle Motor Controller and Driver GENERAL DESCRIPTION FEATURES The M L6035 is a 5 volt brushless motor controller and driver. The circuit provides three phase sensorless commutation and speed control. A digital commutation
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ML6035
L6035
3600rev/m
ML6035CH
32-Pin
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transistor bd136
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 -9 7 0 MHz.
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MRF897
transistor bd136
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED 42 AMP, 200 VOLT 3 PHASE BRIDGE SMART POWER HYBRID IVI.S.KENNEDY CORP. 4320 8 1 7 0 Thom pson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 PRELIMINARY FEATURES: • • • • • • • 2 0 0 V , 4 2 A m p Capability Ultra Low Therm al Resistance - Junction to Case - 0 .3 °C A V
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MlL-STD-1772
MSK4320
SK4320B
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MRF844
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.
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MRF844
MRF844
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TRANSISTOR S 838
Abstract: transistor c 838 TRANSISTOR motorola 838
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF847 . . . designed for 12.5 volt UHF large-signal, com m on-base amplifier applica tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.
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MRF847
MRF847
TRANSISTOR S 838
transistor c 838
TRANSISTOR motorola 838
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MRF857S
Abstract: transistor bd136 MRF857S equivalent 305D-01
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.
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305D-01,
MRF857S
transistor bd136
MRF857S equivalent
305D-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 80 0 -9 6 0 MHz.
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MRF858
MRF858S
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c 2579 power transistor
Abstract: hf power transistor NPN c 2579 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.
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MRF899
c 2579 power transistor
hf power transistor NPN
c 2579 transistor
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mhw 916
Abstract: max9603 GP 950
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F S ilic o n FE T P o w er A m p lifie r Designed specifically for the European Digital Extended G roup Special Mobile GSM Base Station applications in the 9 2 5 -9 6 0 MHz frequency range. MHW 916 operates from a 26 Volt supply and requires 15.5 dBm of RF input
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MHW916
mhw 916
max9603
GP 950
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nelco
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistors MRF891 MRF891S . . . designed for 24 volt UHF large-signal, common-emitter amplifier applica tions in industrial and commercial FM equipment operating in the range of 8 0 0-9 60 MHz.
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--j14
MRF891
RF891S
nelco
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1079 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(ON) = 0 .9 5 ii (Typ.)
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2SK1079
10OfiA
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N3038
Abstract: bd136 equivalent transistor bd136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, d ass-A B linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 80 0 -9 7 0 MHz.
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MRF897R
DL110/D)
N3038
bd136 equivalent
transistor bd136
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