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    9 VOLT MOTOR Search Results

    9 VOLT MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation

    9 VOLT MOTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA PACKAGE thermal profile powerpc motorola

    Abstract: MPE603E7VECD Nippon capacitors freescale 132-CQFP
    Text: Freescale Semiconductor, Inc. MPE603E7VEC/D Motorola Order Number 9/97 IN A RY Advance Information IM EC603e Embedded RISC Microprocessor Family: EL PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e


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    PDF MPE603E7VEC/D EC603e PID7v-EC603e 0007v EC603e PID7v-EC603e) PID6-EC603e) PID7v-EC603e. BGA PACKAGE thermal profile powerpc motorola MPE603E7VECD Nippon capacitors freescale 132-CQFP

    Untitled

    Abstract: No abstract text available
    Text: SECTION 9 NONLINEAR TRANSFORMERS 600 Volt Class K-Factor, Three Phase Harmonics Today Transformers for Non-Linear Loads . 196 Aluminum & Copper, NEMA 3R Features . 198 K Factor 4 Selection Tables . 199


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BX1320 IL08 DRUM AND CAPSTAN MOTOR DRIVE CONTROLLER —SIDE VIEW— _ + 1 2 CONT DM IN H IN VEE 3 4 5 CT IN 6 7 8 PWM 9 10 REF OFF OUT1 OUT2 VOLT SET OUT IN GND VCC 11 12 13 OUT3


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    PDF BX1320

    Motorola transistors MRF3104

    Abstract: MRF3104 MRF3105 MRF3106
    Text: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power


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    PDF MRF3104 MRF3105 MRF3106 MRF3104 MRF3105 MRF3104/D Motorola transistors MRF3104 MRF3106

    339 Motorola

    Abstract: 128kx8 1MX1 1MX4 motorola 32kx8
    Text: Asynchronous CMOS Fast SRAMs 3.3 Volt Supply MCM6306D 32Kx8 . 3-112 5 Volt Supply MCM6205D MCM6206BA MCM6206D MCM6208C MCM6209C MCM6226A MCM6226B 32Kx9 .3-3 32Kx8 . 3-9


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    PDF MCM6306D 32Kx8 MCM6226BA MCM6226BB MCM6227A MCM6227B MCM6229A MCM6229B MCM6229BA MCM6246 339 Motorola 128kx8 1MX1 1MX4 motorola 32kx8

    SMT A06 transistor

    Abstract: EC603e OBG 88 Zo transistor h07 G30-88 G38-87 ABB ap 300
    Text: MPE603E7VEC/D Motorola Order Number 9/97 Advance Information EC603e Embedded RISC Microprocessor Family: PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e microprocessor, abbreviated as PID7v-EC603e) and a 3.3-volt version (PID 0006 EC603e


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    PDF MPE603E7VEC/D EC603e PID7v-EC603e 0007v PID7v-EC603e) PID6-EC603e) PID7v-EC603e. SMT A06 transistor OBG 88 Zo transistor h07 G30-88 G38-87 ABB ap 300

    Nippon capacitors

    Abstract: 617-2455 cn/A/U 237 BG
    Text: MPE603E7VEC/D Motorola Order Number 9/97 TM Advance Information EC603e Embedded RISC Microprocessor Family: PID7v-EC603e Hardware Specifications The EC603e is implemented in both a 2.5-volt version (PID 0007v EC603e microprocessor, abbreviated as PID7v-EC603e) and a 3.3-volt version (PID 0006 EC603e


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    PDF MPE603E7VEC/D EC603e PID7v-EC603e 0007v PID7v-EC603e) PID6-EC603e) PID7v-EC603e. Nippon capacitors 617-2455 cn/A/U 237 BG

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC 10 AMP, 6 0 V , 3 PHASE MOSFET BRUSHLESS MOTOR CONTROLLER M .S.KEN N EDY CORP. 4460 8 1 7 0 Thompson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 FEATURES: • • • • • • • • • • 60 Volt Motor Supply Voltage


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    PDF 51343QQ Q0005

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor . . . designed for 24 volt UHF large-signal, comm on-base amplifier applications in indu stria l and com m ercial FM equipm ent operating in the range of 8 0 4-9 60 MHz. • Specified 24 Volt, 900 M Hz Characteristics


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    PDF MRF894

    k 3919 ks 82

    Abstract: k 2101 MOSFET k 3919 RF92 C380 O 7z mosfet IRF9Z20 IRF9Z22 T-39 TLA 1131
    Text: HE D I MflSSMSE aaaflbBO 3 | Data Sheet No. PD-9.461 A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER II«R I T-39-19 HEXFET TRANSISTORS P-CHAIMNEL 5 0 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package IRF9ZSO IR F 9 Z 2 2 Product S u m m ary


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    PDF 0flb30 T-39-19 T0-220AB GS-10V C-384 k 3919 ks 82 k 2101 MOSFET k 3919 RF92 C380 O 7z mosfet IRF9Z20 IRF9Z22 T-39 TLA 1131

    RF92

    Abstract: IRF9Z22 7n20 k 3919 7z mosfet IRF9Z20 T-39
    Text: H E 0 I Mä5S4S2 INTERNATIONAL □□Qöb30 3 | Data Sheet No. PD-9.461A RECTIFIER in t e r n a t io n a l r e c t if ie r I O R T -3 9 -1 9 H E X F E T T R A N S I S T O R IRF9Z20 IRF9ZSS S P-CHAN1MEL 50 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package


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    PDF T-39-19 T0-220AB C-384 RF92 IRF9Z22 7n20 k 3919 7z mosfet IRF9Z20 T-39

    Motorola UHF Power Amplifier Module

    Abstract: MHW812A3 301H W812 LXJ capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M H W 812A 3 The RF Line U H F P ow er A m p lifier . . . designed for 13 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 890 to 915 MHz. • 12 W, 8 9 0 -9 1 5 MHz HIGH GAIN RF POWER


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    PDF EB-107. Motorola UHF Power Amplifier Module MHW812A3 301H W812 LXJ capacitor

    Untitled

    Abstract: No abstract text available
    Text: November 1 9 % PRELIM IN ARY Micro Linear ML6035 5V Spindle Motor Controller and Driver GENERAL DESCRIPTION FEATURES The M L6035 is a 5 volt brushless motor controller and driver. The circuit provides three phase sensorless commutation and speed control. A digital commutation


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    PDF ML6035 L6035 3600rev/m ML6035CH 32-Pin

    transistor bd136

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 -9 7 0 MHz.


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    PDF MRF897 transistor bd136

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED 42 AMP, 200 VOLT 3 PHASE BRIDGE SMART POWER HYBRID IVI.S.KENNEDY CORP. 4320 8 1 7 0 Thom pson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 PRELIMINARY FEATURES: • • • • • • • 2 0 0 V , 4 2 A m p Capability Ultra Low Therm al Resistance - Junction to Case - 0 .3 °C A V


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    PDF MlL-STD-1772 MSK4320 SK4320B

    MRF844

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.


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    PDF MRF844 MRF844

    TRANSISTOR S 838

    Abstract: transistor c 838 TRANSISTOR motorola 838
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF847 . . . designed for 12.5 volt UHF large-signal, com m on-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.


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    PDF MRF847 MRF847 TRANSISTOR S 838 transistor c 838 TRANSISTOR motorola 838

    MRF857S

    Abstract: transistor bd136 MRF857S equivalent 305D-01
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


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    PDF 305D-01, MRF857S transistor bd136 MRF857S equivalent 305D-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 80 0 -9 6 0 MHz.


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    PDF MRF858 MRF858S

    c 2579 power transistor

    Abstract: hf power transistor NPN c 2579 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.


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    PDF MRF899 c 2579 power transistor hf power transistor NPN c 2579 transistor

    mhw 916

    Abstract: max9603 GP 950
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F S ilic o n FE T P o w er A m p lifie r Designed specifically for the European Digital Extended G roup Special Mobile GSM Base Station applications in the 9 2 5 -9 6 0 MHz frequency range. MHW 916 operates from a 26 Volt supply and requires 15.5 dBm of RF input


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    PDF MHW916 mhw 916 max9603 GP 950

    nelco

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistors MRF891 MRF891S . . . designed for 24 volt UHF large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 0-9 60 MHz.


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    PDF --j14 MRF891 RF891S nelco

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1079 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(ON) = 0 .9 5 ii (Typ.)


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    PDF 2SK1079 10OfiA

    N3038

    Abstract: bd136 equivalent transistor bd136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, d ass-A B linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 80 0 -9 7 0 MHz.


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    PDF MRF897R DL110/D) N3038 bd136 equivalent transistor bd136