2u 62 diode
Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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BD610
BDS11
BDS14
2SD213
2N5006
2N5007
2N5623
2N5624
2SA746
2SA877
2u 62 diode
2SC1115
bd313
KT808BM
sdt7603
2u 87 diode
2u 45 diode
diode 2U 66
bdy19
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DTS517
Abstract: BUV28A
Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15
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SDT7207
SDT7612
2N2229
2N3473
2N2233
2N3477
SDT12201
DTS517
BUV28A
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16R20
Abstract: C166 C166SV2 SAF-XC164N-16F20F SAF-XC164N-16F40F SAF-XC164N-8F40F XC164N XC166 SAF-XC164CS-16F40F BB
Text: Data Sheet, V1.2, Aug. 2006 XC164N-16F/16R XC164N-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.
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XC164N-16F/16R
XC164N-8F/8R
16-Bit
C166SV2
XC164N
XC164N
XC164N,
16R20
C166
SAF-XC164N-16F20F
SAF-XC164N-16F40F
SAF-XC164N-8F40F
XC166
SAF-XC164CS-16F40F BB
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SAF-XC164CS-16F40F
Abstract: SAK-XC164CS-16F20F SAK-XC164CS-16F40F circuit diagram of 4 channel long range RF based INFINEON XC164 C166 C166SV2 XC164CS XC166 16R2
Text: Data Sheet, V2.3, Aug. 2006 XC164CS-16F/16R XC164CS-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.
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XC164CS-16F/16R
XC164CS-8F/8R
16-Bit
C166SV2
XC164CS
XC164CS
XC164CS,
SAF-XC164CS-16F40F
SAK-XC164CS-16F20F
SAK-XC164CS-16F40F
circuit diagram of 4 channel long range RF based
INFINEON XC164
C166
XC166
16R2
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rf channel trap circuit
Abstract: C166 C166SV2 SAF-XC164D-16F20F SAF-XC164D-16F40F SAF-XC164D-8F40F XC164D XC166
Text: Data Sheet, V1.2, Aug. 2006 XC164D-16F/16R XC164D-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.
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XC164D-16F/16R
XC164D-8F/8R
16-Bit
C166SV2
XC164D
XC164D
XC164D,
rf channel trap circuit
C166
SAF-XC164D-16F20F
SAF-XC164D-16F40F
SAF-XC164D-8F40F
XC166
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2SA562
Abstract: transistor 2SA562
Text: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS
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2SA562
30MHz
25min
40min
2SA562
transistor 2SA562
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1N4002 smd type
Abstract: HS-509 1N4002 smd 5962-95694 GDIP1-T16 HS-0548RH HS-0549RH CDIP2-T16 MKT .1K
Text: HS-0548RH, HS-0549RH TM Data Sheet August 2001 Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Overvoltage Protection tle 8R S9R iadle ifn4 nOS ti- The HS-0548RH and HS-0549RH are radiation hardened analog multiplexers with Active Overvoltage Protection and
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HS-0548RH,
HS-0549RH
HS-0548RH
HS-0549RH
1N4002 smd type
HS-509
1N4002 smd
5962-95694
GDIP1-T16
CDIP2-T16
MKT .1K
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PG-TQFP-100-5
Abstract: pwm 62d C166 C166SV2 SAF-XC164S-16F20F SAF-XC164S-16F40F SAF-XC164S-8F40F XC164S XC166 pec 632
Text: Data Sheet, V1.2, Aug. 2006 XC 16 4 S- 1 6 F/ 1 6 R XC164S-8F/8R 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved.
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XC164S-8F/8R
16-Bit
C166SV2
XC164S
XC164S
XC164S,
PG-TQFP-100-5
pwm 62d
C166
SAF-XC164S-16F20F
SAF-XC164S-16F40F
SAF-XC164S-8F40F
XC166
pec 632
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S9018 transistor
Abstract: S9018 S9018* transistor S9018 TO92
Text: M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR NPN FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V|8R)CB0: 25 V ► Junction tem perature range T j.T s tg : ELECTRICAL -5 5 “C to + 150°C CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e
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S9018
400MHz
S9018
S9018 transistor
S9018* transistor
S9018 TO92
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VN2410M
Abstract: VN2410L VN2410
Text: ^Sifconix S S 2 ‘ ~ ìn Gt VN2410 SERIES N-Channel Enhancem ent-M ode MOS Transistors PRODUCT SUMMARY TO-92 PART NUMBER V 8R DSS rDS(ON) (Í1) (V) BOTTOM VIEW <D (A) PACKAGE VN241QL 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 (See Section 7)
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VN2410
VN2410L
VN2410M
O-237
VNDB24
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FUJI ELECTRIC
Abstract: 2SC4538 2SC4538R
Text: S P E C I F I CAT I O DEVICE NAME TYPE NAME BIPOLAR TRANSISTOR 2S C 4 5 3 8R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DA T E DRAWN CHECKED NAME APPROVED Fuji Electric C o jid 1/12 Y 025T-R-004a Ratings
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2SC4538R
025T-R-004a
2SG453SF*
0257-R-Ã
0257-P
-003a
0257-R-003a
0257-R-003a
FUJI ELECTRIC
2SC4538
2SC4538R
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BR101
Abstract: transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331
Text: N AMER PHILIPS/DISCRETE b*ìE D • ^53=131 DDE7&EL 23H BR101 I SILICON CONTROLLED SWITCH The 8R 101 is a planar p-n-p-n switch in a T O -72 metal envelope, intended fo r tim e base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/
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BR101
8R101
BR101
transistor T43
npn transistor
AG TRANSISTOR
n-p-n power transistor planar
transistor c 5331
transistor ag
philips br101
BR101A
Transistor 5331
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ge D45E3
Abstract: D45E3 d45e3 replacement 4cti D41K1 D40C1 D40C2 D40C3 D40C4 D40C5
Text: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 V CEO Min. (V 1 Ccmt. (A l 30 5 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.
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200mA
D40C1
D40C2
D40C3
D40C4
D40C5
D40C7
1I11811
ge D45E3
D45E3
d45e3 replacement
4cti
D41K1
D40C4
D40C5
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D40K1
Abstract: D40KI pnp transistor 800v NPN power transistor 15A amperes D41K1 transistor darlington 800V 10A D40C7 Complementary Darlington Audio Power Amplifier transfor D40C1
Text: SILICON POWER DARLINGTON TRANSISTORS NPN - HIGH GAIN Pt T c = 25°C GE Type W> D40C1 Min. (V 1 Ccmt. (A l 30 5 V CEO 6 .2 5 hp£ 5 V , 200m A M in. M ax. 10,0 00 6 0 ,0 0 0 ft Typical (M H z) Package Type COM M ENTS 8R O M I Pfcwér/Ta • V e ry High Gain: 6 0 k ty p ic a l.
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200mA
D40C1
D40C2
D40C3
D40C4
D40C5
D40C7
1I11811
I38B8I89PII
D40K1
D40KI
pnp transistor 800v
NPN power transistor 15A amperes
D41K1
transistor darlington 800V 10A
D40C7
Complementary Darlington Audio Power Amplifier
transfor
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diode 437 KZ
Abstract: No abstract text available
Text: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — KP*g/tt • A S O ^ /a I ' • Îfeifciïfc k BX m In c lu d in g Free W h e e lin g D io d e _ . .
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1DI3OOZ-14O
diode 437 KZ
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Diode LT 4A 03
Abstract: 600ADC f8cj M106 T151 transistor WT9
Text: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — • Îfeifciïfc k BX m _ OS: <m[ KP*g/tt • A S O ^ /a I ' In c lu d in g Free W h e e lin g D io d e
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1DI3OOZ-14O
E82988
I95t/R89)
Diode LT 4A 03
600ADC
f8cj
M106
T151
transistor WT9
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BCX18R
Abstract: BCX17 BCX17R BCX18 BCX19
Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS BCX17 BCX18 IS S U E 3 - F E B R U A R Y 1996 P A R T M A R K IN G D E T A IL S - BC X17 -T 1 BCX18 -T 2 B C X 1 7R -T 4 B C X 1 8R -T 5 C O M P L E M E N T A R Y T Y P E S - BC X17 - B C X19 B C X 1 8 - BC X20
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BCX17
BCX18
BCX17R
BCX18R
BCX19
BCX18-BCX20
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JESD22-A114-D
Abstract: JESD22-A114D varistor BETA 22-A114D rf POWER BJTs BGA615L7 BGA622L7 TVS diode Application Note AN086 AN103
Text: A pp li c at i on N ot e , R ev . 1 . 0 , J un e 2 00 7 A p p li c a t i o n N o t e N o . 1 0 3 E S D a n d A n t e nn a P r o t ec t i o n u s i n g I n f i n eo n E SD 0 P 8R FL R F & P r o t e c ti o n D e v i c e s Edition 2007-06-27 Published by Infineon Technologies AG
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JESD22-A114D,
JESD22-A114-D
JESD22-A114D
varistor BETA
22-A114D
rf POWER BJTs
BGA615L7
BGA622L7
TVS diode Application Note
AN086
AN103
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -NOVEMBER94_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT v CBO 25 V Collector-Emitter Voltage v CEO 25 V Emitter-Base Voltage V EBO 4 V Continuous Collector Current
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-NOVEMBER94_
100mA#
500mA,
100mA,
100MHz
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2sc3440
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3440 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3440 is a super mini silicon NPN epitaxial type transistor Unitmm OUTLINE DRAWING « +0-5 2-5 -0.3 designed with high collector current, small VcE(sat).
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2SC3440
2SC3440
2SA1365.
180MHz
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LDTC123TWT1G
Abstract: 8R transistor LDTC123T
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC123TWT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC123TWT1G
SC-70
LDTC123TWT1G
8R transistor
LDTC123T
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Untitled
Abstract: No abstract text available
Text: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can
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08-May-01
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8R transistor
Abstract: No abstract text available
Text: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can
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V15X5
8R transistor
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Untitled
Abstract: No abstract text available
Text: 1419 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The ten pin TO-5 package, with a 0.230" pin circle is the most accommodating of the TO-5 series of networks. It has the largest R capacity of the smaller TO series. This network can
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08-Mar-05
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