Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    8N50PM Search Results

    SF Impression Pixel

    8N50PM Price and Stock

    IXYS Corporation IXFP8N50PM

    MOSFET N-CH 500V 4.4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP8N50PM Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXTP8N50PM

    MOSFET N-CH 500V 4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP8N50PM Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Integrated Circuits Division IXFP8N50PM

    MOSFET DIS.4.4A 500V N-CH PLUS220FP POLARHV THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFP8N50PM
    • 1 $0.08186
    • 10 $0.08186
    • 100 $0.0671
    • 1000 $0.0671
    • 10000 $0.0671
    		Get Quote

    8N50PM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A Ω ≤ 0.8 ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 8N50PM 405B2

    IXTP8N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 8N50PM 405B2 IXTP8N50PM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 8N50PM 405B2

    8N50PM

    Abstract: 8N50P
    Text: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 8N50PM 405B2 8N50PM 8N50P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2