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    8N10 MOSFET Search Results

    8N10 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    8N10 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP8N10

    Abstract: TP8N08 8n10 MTP8N08 8N10 mosfet MTP8N10 tp8n1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8N08 MTP8N10 P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S T M O S PO W ER FETs 8 AM PERES rDS on = 0.5 O H M 80 and 100 V O LTS T h e s e T M O S P o w e r F E T s a r e d e s i g n e d f o r m e d i u m v o lt a g e ,


    OCR Scan     		PDF MTP8N08 MTP8N10 O-220AB TP8N10 TP8N08 8n10 8N10 mosfet MTP8N10 tp8n1

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


    OCR Scan     		PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915

    MPT50N06

    Abstract: 33091 MC33091 MPT50 8N10 mosfet
    Text: MOTOROLA MC33091 SEMICONDUCTOR TECHNICAL DATA Advance Information High Side TMOS Driver HIGH SIDE TMOS DRIVER The MC33091 is a high side TMOS driver designed for use in harsh automotive switching applications w hich require the capability of handling high voltages


    OCR Scan     		PDF MC33091 MC33091 MPT50N06 33091 MPT50 8N10 mosfet

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF