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    8MX32 DRAM SIMM Search Results

    8MX32 DRAM SIMM Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    8MX32 DRAM SIMM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HYM532814CM

    Abstract: HY5117404C HYM532814C HYM532814CMG
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin PDF

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin PDF

    HY5117404C

    Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin HYM532814 PDF

    HY5117400C

    Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin dec97 PDF

    HYM532814BM

    Abstract: HY5117404B HYM532814B
    Text: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532814B 8Mx32 8Mx32-bit HY5117404B HYM532814BM HYM532814BMG 72-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: »"HYUNDAI > • H YM 5 3281 4B M -S eries 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.1 uF and 0.01 nF


    OCR Scan     		8Mx32 HYM532814B 8Mx32-bit HY5117404B HYM532814BM HYM532814BMG 72-Pin 256ms DQ0-DQ31) 18-f/-0 PDF

    KMM5328004CSW

    Abstract: KMM5328004CSWG samsung 64mb dram module 72-pin simm
    Text: DRAM MODULE KMM5328004CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328004CSW/CSWG DRAM MODULE KMM5328004CSW/CSWG


    Original     		KMM5328004CSW/CSWG 8Mx32 4Mx16 KMM5328004CSW/CSWG 4Mx16, KMM5328004C 8Mx32bits KMM5328004C KMM5328004CSW KMM5328004CSWG samsung 64mb dram module 72-pin simm PDF

    8mx32 simm 72 pin

    Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
    Text: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.


    Original     		328006ES52T16JD 8Mx32 DS311- 8mx32 simm 72 pin 8Mx32 dram simm 4Mx4 dram simm simm EDO 72pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5328000CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328000CSW/CSWG DRAM MODULE KMM5328000CSW/CSWG


    Original     		KMM5328000CSW/CSWG 8Mx32 4Mx16 KMM5328000CSW/CSWG 4Mx16, KMM5328000C 8Mx32bits 4Mx16bits PDF

    328006-S52T16JD

    Abstract: 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM
    Text: 8M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 328006-S52T16JD 72 Pin 8Mx32 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Fast Page Mode


    Original     		328006-S52T16JD 8Mx32 DS311- 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C


    Original     		M53210804CY0/CT0-C 8Mx32 4Mx16 M53210804CY0/CT0-C 4Mx16, 8Mx32bits 4Mx16bits PDF

    K4E641611C

    Abstract: No abstract text available
    Text: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C


    Original     		M53230804CY0/CT0-C 8Mx32 4Mx16 M53230804CY0/CT0-C 4Mx16, 8Mx32bits K4E641611C PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package G EN ER AL DESCRIPTIO N FEATURES • Part Identification - KMM5328000BK 4096 cycles/64 ms Ref, SOJ, Solder


    OCR Scan     		KMM5328000BK/BKG KMM53281OOBK/BKG KMM53281 8Mx32 KMM5328000BK cycles/64 KMM53280 KMM5328000BKG PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen


    OCR Scan     		KMM53281OOAV/AVG 8Mx32 400mil KMM5328100AV 24-pin 72-pin KMM53201OOAV PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5328004BK/BKG KMM5328104BK/BKG KMM5328104BK/BKG 8Mx32 KMM53280 KMM5328004BK cycles/64ms KMM5328004BKG PDF

    mega 329

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte / KMM53281OOAK/AKG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM53281OOAK/AKG 8Mx32 300mil KMM5328100AK 24-pin 72-pin M5328100AK 110ns 130ns mega 329 PDF

    8Mx32 dram simm

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804BY0/BT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210804BY0/BT0-C Revision History Version 0.0 (Sept., 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53210804BY0/BT0-C 8Mx32 4Mx16 M53210804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm PDF

    KMM5328100AV

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package G EN ERA L D ES C R IPTIO N FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen


    OCR Scan     		KMM53281OOAV/AVG 8Mx32 400mil KMM5328100AV 24-pin 72-pin PDF

    8Mx32 dram simm

    Abstract: 8mx32 simm 72 pin
    Text: DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230804BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53230804BY0/BT0-C 8Mx32 4Mx16 M53230804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm 8mx32 simm 72 pin PDF

    KM44C4000AK

    Abstract: 4Mx4 DRAM
    Text: DRAM MODULE 32 Mega Byte KMM5328000AK/AKG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5328000AK is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328000AK consists of sixteen


    OCR Scan     		KMM5328000AK/AKG 8Mx32 KMM5328000AK 24-pin 72-pin KM44C4000AK 4Mx4 DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES T h e S a m su n g KM M 53280 1 O O B K is a 8M b it x 32 • P a rt Id e n tificatio n


    OCR Scan     		KMM5328000BK/BKG KMM53281OOBK/BKG KMM5328000BK/BKG KMM53281 8Mx32 KMM5328000B KMM5328100BK/BKG 44C4000BK KMM5328100BK/BKG PDF

    8Mx32 dram

    Abstract: Samsung Capacitor sse
    Text: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The


    OCR Scan     		KMM5328000AV/AVG 8Mx32 KMM5328000AV 24-pin 72-pin 5328000AV KMM5320OOOAV 8Mx32 dram Samsung Capacitor sse PDF

    KM44C4104bk

    Abstract: No abstract text available
    Text: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		8Mx32 KMM53280 24-pin 72-pin KMM5328004B KMM5328104BK/BKG KMM5328004BK/BKG KMM5328104BK/BKG KM44C4104bk PDF