C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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Untitled
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
10-year
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BD4822
Abstract: No abstract text available
Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized
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bq4822Y
536-bit
BD4822
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A7 SMD TRANSISTOR
Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is
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HS-6664RH
HS-6664RH
HS6664R
A7 SMD TRANSISTOR
SMD A8 Transistor
smd transistor A8
smd transistor A11
SMD Transistor A12
smd transistor a9
A12 SMD TRANSISTOR
smd transistor A7
smd transistor A6
SMD a7 Transistor
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TTE24C
Abstract: No abstract text available
Text: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and
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64K-bit/32K-bit
TTE24C32/TTE24C64
TTE24C32/TTE24C64
32K-bits
64K-bits
TE24C32/TTE24C64
TTE24C
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Untitled
Abstract: No abstract text available
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
27C64
600-mil-wide
CY7C266
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Untitled
Abstract: No abstract text available
Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
600-mil-wide
CY7C266
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27C64
Abstract: CY7C266 R1250 direct replacement
Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit
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CY7C266
CY7C266
600-mil-wide
27C64
R1250
direct replacement
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w16 90
Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
600-mil-wide
CY7C266
w16 90
27C64
R1250
27C64 8k EPROM
MS-020
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27C64
Abstract: CY7C266 R1250 8kx8 eprom pin diagram
Text: 1CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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1CY7C266
CY7C266
600-mil-wide
CY7C266
27C64
R1250
8kx8 eprom pin diagram
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74S471
Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Text: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8
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256x4
512x4
256x8
512x8
7647R
82s23
74S471
mmi 6331
74S287
MMI 6330
74s188 programming
AMD 27S21
MMI 6309
6306 MMI
74S188
74S288 PROGRAMMING
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Untitled
Abstract: No abstract text available
Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package
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bq431OY
bq4310Y
28-pin,
330-mil
4833YPD
bg4310YSH-
bq48SH
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as7c164
Abstract: No abstract text available
Text: H ig h P e rfo rm a n ce m 8KX8 RI AS7C164 A S7C I64L CMOS SRAM oa 8Kx8 CMOS SRAM Common I/O Features • Organization: 8,192 words x 8 bits • High speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time
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AS7C164
28-pin
as7c164
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AS7C164-20PC
Abstract: AS7C164 000DM 7C164-12 7C164-10
Text: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption
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AS7C164
28-pin
AS7C164-20PC
AS7C164
000DM
7C164-12
7C164-10
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Untitled
Abstract: No abstract text available
Text: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM
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PNC10C68
PNC10C68
PS2385
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Untitled
Abstract: No abstract text available
Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged
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CY7C266
CY7C266
600-mil-wide
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C266
Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram
Text: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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CY7C266
27C64
CY7C266
600-mil-wide
C266
P15 Package
R1250
8kx8 eprom pin diagram
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27C64
Abstract: CY7C266 R1250 LP 06 A4 A1 AA
Text: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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CY7C266
27C64
600-mil-wide
R1250
LP 06 A4 A1 AA
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Untitled
Abstract: No abstract text available
Text: Prelim inary bq4823Y TIMEKEEPER Module with 8Kx8 NVSRAM General Description Features ► Integrated u ltra low-power SRAM, real-time clock, power-fail control circuit, and battery >• Real-time clock counts seconds through years in BCD format ► Frequency te st output for real
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bq4823Y
TD4833YPDUM
bq48SHX12
bq48SHX12TR
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INTEL 2764A
Abstract: 2764a-2 i2764a 2764 memory chip 2764A2 2764A1 Z8051
Text: in t e i 2764A ADVANCED 64K 8Kx8 UV ERASABLE PROM - 200 nsec StandardAccess Time — HMOS H*-E Technology ' • Low Power - 6 0 mA Maximum Active " intel‘9ent Identifier Mode — Automated Programming Operations — 20 mA Maximum Standby in d ig e n t Programming™ Algorithm
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536-bit
INTEL 2764A
2764a-2
i2764a
2764 memory chip
2764A2
2764A1
Z8051
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32Kx16
Abstract: Intel EEPROM 32kx8
Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4
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32Kx8
64KX8
32KX16
128KX8
64KX16
32KX32
64KX32
512KX8
256KX16
Intel EEPROM 32kx8
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 4bE D 37bfiSS5 Q Q l b 1^ GEC P L E S S E Y T «PLSB T - * /4 r 2 & - l2 L MARCH 1992 SEMICONDUCTORS PRELIMINARY INFORMATION DS3235 1.1 P11C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM The P11C68 is a fast static RAM 35 and 45 ns , with a
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37bfiSS5
DS3235
P11C68
P11C68
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Untitled
Abstract: No abstract text available
Text: U631 H64 Software Controlled 8Kx8 nvSRAM □ Packages: P D IP 28 300 mil S O P28 (330 mil) Features □ H igh-perform ance C M O S non volatile static RAM 8192 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable A ccess T im es
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Untitled
Abstract: No abstract text available
Text: _ CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • C M O S fo r o p tim u m sp ee d /p o w e r T he C Y 7C 266 is a hig h -p e rfo rm a n ce 8192 w o rd by 8 bit C M O S PRO M . W hen de selected , th e C Y 7C 266 a u to m a tica lly
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CY7C266
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