marking 8J
Abstract: MMBZ5234B 8J sot 23
Text: SEMICONDUCTOR MMBZ5234B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8J No. 1 Item Marking Device Mark 8J MMBZ5234B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5234B
OT-23
marking 8J
MMBZ5234B
8J sot 23
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KIA78L*F
Abstract: 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314
Text: SEMICONDUCTOR KIA78L18F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 J 1 314 2. Marking 2 Item Marking Description Device Mark 8J KIA78L18F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.
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KIA78L18F
OT-89
KIA78L*F
8J marking
marking 8j sot-89
marking 8J
KIA78L18F
sot-89
MARKING SPECIFICATION SOT-89
marking 314
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9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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IPP037N06L3 G
Abstract: No abstract text available
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G 3 Power-Transistor Product Summary Features V 9I . K R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R -@?>2I-' +&, Z R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD
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IPB034N06L3
IPI037N06L3
IPP037N06L3
492C86à
E6DE65
E2C86Eà
IPP037N06L3 G
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PDF
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Untitled
Abstract: No abstract text available
Text: IPB049N06L3 G IPP052N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' ,&/ Z I9 0( 6
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IPB049N06L3
IPP052N06L3
492C86à
E6DE65
E2C86Eà
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PDF
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Untitled
Abstract: No abstract text available
Text: IPB081N06L3 G IPP084N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' 0&) Z I9 -( 6
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IPB081N06L3
IPP084N06L3
492C86à
E6DE65
E2C86Eà
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PDF
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marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
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AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
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TMPZ5231
Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Text: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B
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MMBZ52-SERIES
350mW
MMBZ5226B
TMPZ5226B
MMBZ5227B
TMPZ5227B
MMBZ5228B
TMPZ5228B
MMBZ5229B
TMPZ5229B
TMPZ5231
MMBZ5228B
marking code 8P
MMBZ5227B 8B
TMPZ5232B
MMBZ5226B
MMBZ5227B
MMBZ5229B
MMBZ5230B
MMBZ5231B
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marking 81E
Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Text: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)
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MMBZ52-SERIES
350mW
MMBZ5226B
TMPZ5226B
MMBZ5227B
TMPZ5227B
MMBZ5228B
TMPZ5228B
MMBZ5229B
TMPZ5229B
marking 81E
TMPZ5231
Zener diode 81A
marking 8C
marking 8G
mmbz52
MMBZ5227B 8B
MMBZ5226B
MMBZ5227B
MMBZ5228B
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PDF
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CH00-0250-008
Abstract: raychem tinel-lock ring D38999120
Text: REVISIONS DESCRIPTION L TR I I H11 REVISED PER EC0-11-005139 DATE !APPROVED 129MAR111 HMR IF THIS DOCUMENT IS PRINTED IT BECOMES UNCONTROLLED. CHECK FOR THE LATEST REVISION. CODE 40 TINEL-LOCK ADAPTER NOTESI 1. THIS PRODUCT IS DESIGNED TO TERMINATE A BRAIDED CABLE SHIELD AND
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EC0-11-005139
129MAR111
CH00-0250-008
TXR40
TXR40-3
raychem tinel-lock ring
D38999120
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606G
Abstract: 603G FR601G FR607G diagram fr 310
Text: E SEMICONDUCTOR FR601G -F R 6 0 7 G T A IW A N 6.0 AM PS. G iass Passivated Fast Recovery Rectifiers RoHS R-6 C O M P L IA N C E f .2ÆD¡721 .27i>:$.8j •53* M IN HA. I r F ea tu re s ^ ❖ 4 ^ ■> Low forward voltage drop High current capability High reliability
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OCR Scan
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FR601G
FR607G
1AX25
MIL-STD-202.
16mrn
606G
603G
FR607G
diagram fr 310
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PDF
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ZENER 34b
Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ZENER 34b
zener diode 33B
marking 43b
zener 35b
52B zener
46B zener
Zener diode 81A
MARKING 46B
47B diode
43B diode
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TMPZ5254
Abstract: No abstract text available
Text: NER DIO DE SOT-23/TO -236AB ‘TMPZ’ ZENER DIO DES ELECTRICAL CHARACTERISTICS at T A. = 25°C Zener Voltage Device Min. Nom. Max. Leakage Current Zener Impedance Max @VR Max. ZCT Marking V (V) (V) @'zr (mA) (HA) (V) (Q) @'zr (mA) Pinning Type TMPZ5230
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OCR Scan
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OT-23/TO
-236AB
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5234
TMPZ5236
TMPZ5237
BZX84â
BZX84C5V1
TMPZ5254
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PDF
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OCR Scan
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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PDF
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marking Z2
Abstract: BZX84C5V1 BZX84C5V6
Text: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)
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OCR Scan
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OT-23/TO-236AB
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5234
TMPZ5236
TMPZ5237
TMPZ5239
TMPZ5240
TMPZ5242
marking Z2
BZX84C5V1
BZX84C5V6
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PDF
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MMBZ5228B
Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
Text: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)
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OCR Scan
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MMBZ52
350mW
MMBZ5226B
TMPZ5226B
MMBZ5227B
TMPZ5227B
MMBZ5228B
TMPZ5228B
MMBZ5229B
TMPZ5229B
TMPZ5234B
MMBZ5230B
TMPZ5230B
MMBZ5232B
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PDF
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CMBZ-5240B
Abstract: No abstract text available
Text: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ma-5246B
CMBZ-5247B
CMBZ-5248B
CMBZ-5249B
CMBZ-5250B
CMBZ-5240B
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B
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OCR Scan
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
CMBZ-5255B
CMBZ-5256B
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PDF
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Marking 18A
Abstract: MARKING 8S SOT-23
Text: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C
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OCR Scan
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OT-23
MMBZ5221BLT1
MMBZ5222BLT1
MMBZ5223BLT1
MMBZ5224BLT1
MMBZ5225BLT1
MMBZ5226BLT1
MMBZ5227BLT1
MMBZ5228BLT1
MMBZ5229BLT1
Marking 18A
MARKING 8S SOT-23
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PDF
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PZ5233
Abstract: PZ5252 zca 8j 238BMM PZ5232 PZ5257 zca marking
Text: SPRAGUE/SEMICOND 85 1 4 0 1 9 SPRAGUE. =17 GROUP D aS13ÔSD S E M I C O N D S /ICS 93D 0D03bEÔ 4 03628 SMALL-OUTLINE DIODES T M P Z ’ Zener Diodes ELECTRICAL CHARACTERISTICS a Tfl = 25°C Leakage Current Zener Voltage Device Type I Marking Min. Nom. (V
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OCR Scan
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0D03bEÔ
TMPZ5229
PZ5230
TMPZ5231
PZ5232
PZ5233
PZ5234
PZ5235
PZ5236
PZ5237
PZ5252
zca 8j
238BMM
PZ5257
zca marking
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PDF
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Zener sot marking 162
Abstract: marking 8D SOT 89 marking 81t marking 81J
Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232
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OCR Scan
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300mW)
MMBZ5225
MMBZS267
TD-236AB
OT-23)
Zener sot marking 162
marking 8D SOT 89
marking 81t
marking 81J
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PDF
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Untitled
Abstract: No abstract text available
Text: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B
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OCR Scan
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BZX84C
BZX84
5221B
5223B
5225B
5226B
5228B
5229B
5230B
Z5231B
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PDF
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