sec irf840
Abstract: testing smps circuit Transistor IRF840 500V 8 TO220 CEP840N power supply IRF840 APPLICATION FQI9N50 irf840 CEF840N ssm840p FQP9N50
Text: CEP840N/CEB840N CEI840N/CEF840N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840N 500V 0.85Ω 8A 10V CEB840N 500V 0.85Ω 8A 10V CEI840N 500V 0.85Ω 8A 10V CEF840N 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP840N/CEB840N
CEI840N/CEF840N
CEP840N
CEB840N
CEI840N
CEF840N
O-220
O-263
O-262
O-220F
sec irf840
testing smps circuit
Transistor IRF840 500V 8 TO220
CEP840N
power supply IRF840 APPLICATION
FQI9N50
irf840
CEF840N
ssm840p
FQP9N50
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Untitled
Abstract: No abstract text available
Text: CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP09N7A/CEB09N7A
CEF09N7A
CEP09N7A
CEB09N7A
O-263
O-220
O-220F
O-220/263
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Untitled
Abstract: No abstract text available
Text: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP840L/CEB840L
CEF840L
CEP840L
CEB840L
O-263
O-220
O-220F
O-220/263
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cep840g
Abstract: No abstract text available
Text: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).
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CEP840G/CEB840G
CEF840G
CEP840G
CEB840G
O-263
O-220
O-220F
O-220/263
cep840g
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440
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JANSR2N7400
FSS230R4
R2N74
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSS230R4
JANSR2N7400
igss
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2E12
Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230
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JANSR2N7395
FSL130R4
R2N73
2E12
FSL130R4
JANSR2N7395
Rad Hard in Fairchild for MOSFET
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AMS1508
Abstract: AMS1508CM AMS1508CT
Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response
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AMS1508
500mV
AMS1508
100mV
500mV
O-220
O-220
AMS1508CM
AMS1508CT
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AMS1508
Abstract: AMS1508CM AMS1508CT
Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response
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AMS1508
500mV
AMS1508
100mV
500mV
O-220
O-220
6680B
AMS1508CM
AMS1508CT
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GES5307
Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
Text: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis
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2N5307,
GES5307,
2N5307
GES5307
92CS-42626
10-Typical
92CS-42A29
2N5308
2N5308A
GES5308
GES5308A
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AMS1508
Abstract: AMS1508CM AMS1508CT
Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR RoHS compliant FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response
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AMS1508
500mV
AMS1508
100mV
500mV
O-220
O-220
AMS1508CM
AMS1508CT
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FFP08H60S
Abstract: FFP08H60STU
Text: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08H60S
FFP08H60S
FFP08H60STU
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2SA1327
Abstract: transistor Ic 1A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max.)@IC= -8A ·High DC Current Gain: hFE= 70(Min.)@ IC= -8A APPLICATIONS ·Strobe flash applications.
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2SA1327
2SA1327
transistor Ic 1A
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Untitled
Abstract: No abstract text available
Text: ^ Supertex VN22A in c . N-Channel Enhancement-Mode Vertical DMOS FETs B V dss / R DS ON Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.350 8A VN2206N3 VN2206ND 100 V 0.35H 8A VN2210N3 VN2210ND b v dgs t (max) If Ordering Information
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VN22A
VN2204N3
VN2206N3
VN2210N3
VN2204ND
VN2206ND
VN2210ND
300ms
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FFPF08H60STU
Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08H60S
FFPF08H60S
FFPF08H60STU
F08H60S
HALF WAVE RECTIFIER CIRCUITS high speed
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2N6796
Abstract: TB334
Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor
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2N6796
2N6796
O-205AF
TB334
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IC 0116 DC
Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
Text: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Suitable for switching regulator and motor control High speed switching
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TS13007
TS13007CZ
O-220
IC 0116 DC
ic 0116
ic 4440
0116 ic
TS13007
TS13007CZ
transistor 400V 8A
HIGH CURRENT NPN SILICON TRANSISTOR
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Application of irf840
Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF840
TA17425.
Application of irf840
TRANSISTOR mosfet IRF840
datasheet irf840 mosfet
diode 400V 4A
irf840 equivalent
power supply IRF840 APPLICATION
IRF840 MOSFET
irf840 power supply
transistor irf840
IRF840 and its equivalent
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npn high voltage transistor 500v 8a
Abstract: 2SC4139 si50
Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj
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2SC4139
MT-100
100max
400min
10typ
85typ
Pulse30)
npn high voltage transistor 500v 8a
2SC4139
si50
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2SB1382
Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)
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-120V
-16mA)
2SD2082
-16mA
-120V
-16mA,
2SB1382
transistor 12v 8A
2SD2082
pnp darlington VCE 120V
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2SC4139
Abstract: npn triple diffused transistor 500v 8a
Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj
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2SC4139
MT-100
100max
400min
10typ
85typ
Pulse30)
2SC4139
npn triple diffused transistor 500v 8a
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Application of irf840
Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
Text: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF840
O-220AB
Application of irf840
irf840 power supply
TRANSISTOR mosfet IRF840
datasheet irf840 mosfet
IRF840
TA17425
TB334
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AN7254
Abstract: AN7260 RFP8N20L TB334
Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as
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RFP8N20L
AN7254
AN7260
RFP8N20L
TB334
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IC 0116 DC
Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13007B
O-220
TS13007BCZ
50pcs
IC 0116 DC
NPN Transistor 8A
transistor b 40 Ic-5A datasheet
npn switching transistor Ic 5A
marking A07
marking code IC 4A
transistor npn 2a switching applications
TS13007B
transistor 2a h
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STC08DE150HP
Abstract: mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps
Text: STC08DE150HP Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V
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STC08DE150HP
2002/93/EC
O247-4L
STC08DE150HP
mosfet 1500v
Marking 8A
to247 f
BA157
C08DE150HP
JESD97
mosfet 1500v for smps
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