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    8A TRANSISTOR Search Results

    8A TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    8A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sec irf840

    Abstract: testing smps circuit Transistor IRF840 500V 8 TO220 CEP840N power supply IRF840 APPLICATION FQI9N50 irf840 CEF840N ssm840p FQP9N50
    Text: CEP840N/CEB840N CEI840N/CEF840N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840N 500V 0.85Ω 8A 10V CEB840N 500V 0.85Ω 8A 10V CEI840N 500V 0.85Ω 8A 10V CEF840N 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP840N/CEB840N CEI840N/CEF840N CEP840N CEB840N CEI840N CEF840N O-220 O-263 O-262 O-220F sec irf840 testing smps circuit Transistor IRF840 500V 8 TO220 CEP840N power supply IRF840 APPLICATION FQI9N50 irf840 CEF840N ssm840p FQP9N50

    Untitled

    Abstract: No abstract text available
    Text: CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP09N7A/CEB09N7A CEF09N7A CEP09N7A CEB09N7A O-263 O-220 O-220F O-220/263

    Untitled

    Abstract: No abstract text available
    Text: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP840L/CEB840L CEF840L CEP840L CEB840L O-263 O-220 O-220F O-220/263

    cep840g

    Abstract: No abstract text available
    Text: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP840G/CEB840G CEF840G CEP840G CEB840G O-263 O-220 O-220F O-220/263 cep840g

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440


    Original     		PDF JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss

    2E12

    Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230


    Original     		PDF JANSR2N7395 FSL130R4 R2N73 2E12 FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET

    AMS1508

    Abstract: AMS1508CM AMS1508CT
    Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response


    Original     		PDF AMS1508 500mV AMS1508 100mV 500mV O-220 O-220 AMS1508CM AMS1508CT

    AMS1508

    Abstract: AMS1508CM AMS1508CT
    Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response


    Original     		PDF AMS1508 500mV AMS1508 100mV 500mV O-220 O-220 6680B AMS1508CM AMS1508CT

    AMS1508

    Abstract: AMS1508CM AMS1508CT
    Text: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR RoHS compliant FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response


    Original     		PDF AMS1508 500mV AMS1508 100mV 500mV O-220 O-220 AMS1508CM AMS1508CT

    FFP08H60S

    Abstract: FFP08H60STU
    Text: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08H60S FFP08H60S FFP08H60STU

    2SA1327

    Abstract: transistor Ic 1A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max.)@IC= -8A ·High DC Current Gain: hFE= 70(Min.)@ IC= -8A APPLICATIONS ·Strobe flash applications.


    Original     		PDF 2SA1327 2SA1327 transistor Ic 1A

    FFPF08H60STU

    Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
    Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08H60S FFPF08H60S FFPF08H60STU F08H60S HALF WAVE RECTIFIER CIRCUITS high speed

    FFPF08H60S

    Abstract: IF8A F08H60S
    Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08H60S FFPF08H60STU IF8A F08H60S

    2N6796

    Abstract: TB334
    Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor


    Original     		PDF 2N6796 2N6796 O-205AF TB334

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent

    npn high voltage transistor 500v 8a

    Abstract: 2SC4139 si50
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) npn high voltage transistor 500v 8a 2SC4139 si50

    2SB1382

    Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)


    Original     		PDF -120V -16mA) 2SD2082 -16mA -120V -16mA, 2SB1382 transistor 12v 8A 2SD2082 pnp darlington VCE 120V

    2SC4139

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj


    Original     		PDF 2SC4139 MT-100 100max 400min 10typ 85typ Pulse30) 2SC4139 npn triple diffused transistor 500v 8a

    Application of irf840

    Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
    Text: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF840 O-220AB Application of irf840 irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    IC 0116 DC

    Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
    Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13007B O-220 TS13007BCZ 50pcs IC 0116 DC NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B transistor 2a h

    STC08DE150HP

    Abstract: mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps
    Text: STC08DE150HP Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V


    Original     		PDF STC08DE150HP 2002/93/EC O247-4L STC08DE150HP mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps

    GES5307

    Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
    Text: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis­


    OCR Scan     		PDF 2N5307, GES5307, 2N5307 GES5307 92CS-42626 10-Typical 92CS-42A29 2N5308 2N5308A GES5308 GES5308A

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex VN22A in c . N-Channel Enhancement-Mode Vertical DMOS FETs B V dss / R DS ON Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.350 8A VN2206N3 VN2206ND 100 V 0.35H 8A VN2210N3 VN2210ND b v dgs t (max) If Ordering Information


    OCR Scan     		PDF VN22A VN2204N3 VN2206N3 VN2210N3 VN2204ND VN2206ND VN2210ND 300ms