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    8A SOT 23 Search Results

    8A SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    8A SOT 23 Price and Stock

    Nexperia PLVA668A,215

    Zener Diodes ZENER SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PLVA668A,215 Reel 9,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.048
    		Buy Now

    Nexperia PLVA2668A,215

    Zener Diodes ZENER SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PLVA2668A,215 Reel 18,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Cissoid S A CXT-741G58A-SOT-23-6

    High Temperature Automotive Configurable Logic Gate, SOT-23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC CXT-741G58A-SOT-23-6 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.52
    		Buy Now

    Cissoid S A CMT-741G58A-SOT-23-6

    High Temperature Industrial Configurable Logic Gate, SOT-23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC CMT-741G58A-SOT-23-6 Reel 10
    • 1 -
    • 10 $50.35
    • 100 $47.83
    • 1000 $47.83
    • 10000 $47.83
    		Buy Now

    8A SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 8A

    Abstract: MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A
    Text: SEMICONDUCTOR MMBZ5226B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8A No. 1 Item Marking Device Mark 8A MMBZ5226B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF MMBZ5226B OT-23 Marking 8A MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A

    ksd 180

    Abstract: STA8550SF STC8050SF STA8550
    Text: STC8050SF Semiconductor NPN Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STA8550SF Ordering Information Type NO. Marking Package Code 8A□ STC8050SF SOT-23F □ :hFE rank


    Original     		PDF STC8050SF STA8550SF OT-23F KSD-T5C004-000 ksd 180 STA8550SF STC8050SF STA8550

    SMMUN2211LT3G

    Abstract: DTC114EM3 SOT323 A8A DTC114EET1G
    Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 DTC114E/D SMMUN2211LT3G DTC114EM3 SOT323 A8A DTC114EET1G

    Untitled

    Abstract: No abstract text available
    Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 DTC114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 DTC114E/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with


    Original     		PDF LDTC114EET1 SC-89 LDTC114EET1

    DTC115EET1G

    Abstract: DTC144EET1G DTC114EET1 DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G
    Text: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF DTC114EET1 SC-75/SOT-416 DTC114EET1/D DTC115EET1G DTC144EET1G DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G

    marking 81J

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds


    Original     		PDF MMBZ5221BLT1 225mW OT-23 236AB) OT-23 marking 81J

    marking 8A sot-23

    Abstract: zener f 24 8b 8Q SOT 23 ZENER DIODES SOT-23 81P MMBZ5228BLT1 MMBZ5260BLT1 equivalent Zener diode MMBZ5232BLT1 Zener Diode SOT-23 marking B J13 ZENER MARKING MMBZ5222BLT1
    Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING


    Original     		PDF MMBZ5221BLT1 225mW OT-23 236AB) OT-23 marking 8A sot-23 zener f 24 8b 8Q SOT 23 ZENER DIODES SOT-23 81P MMBZ5228BLT1 MMBZ5260BLT1 equivalent Zener diode MMBZ5232BLT1 Zener Diode SOT-23 marking B J13 ZENER MARKING MMBZ5222BLT1

    MUN5214T1

    Abstract: MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1

    MUN5214T1

    Abstract: c403c MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 c403c MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G

    ECG circuit diagram

    Abstract: C3216X5R1E106M EEV-FK1E331P MMBT3904-TP 22uF 10v electrolytic smd IR383x IR3831WM 12 lead ecg circuit diagram
    Text: IRDC3831W SupIRBuck TM USER GUIDE FOR IR3831W EVALUATION BOARD DESCRIPTION The IR3831W is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mmx6mm Power QFN package. An output over-current protection function is


    Original     		PDF IRDC3831W IR3831W IR3831W ECG circuit diagram C3216X5R1E106M EEV-FK1E331P MMBT3904-TP 22uF 10v electrolytic smd IR383x IR3831WM 12 lead ecg circuit diagram

    MPL104-0R6IR

    Abstract: ECG circuit diagram Fairchild 902 MMBT3904-TP RC0603FR-100RL EEV-FK1E331P IR383
    Text: IRDC3831 SupIRBuck TM USER GUIDE FOR IR3831 EVALUATION BOARD DESCRIPTION The IR3831 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mmx6mm Power QFN package. Key features offered by the IR3831 include


    Original     		PDF IRDC3831 IR3831 MPL104-0R6IR ECG circuit diagram Fairchild 902 MMBT3904-TP RC0603FR-100RL EEV-FK1E331P IR383

    MPO104-1R0IR

    Abstract: IR3841 EEV-FK1E331P GRM1885C1H222JA01D MMBT3904-TP
    Text: IRDC3841 SupIRBuck TM USER GUIDE FOR IR3841 EVALUATION BOARD DESCRIPTION The IR3841 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mmx6mm Power QFN package. An output over-current protection function is


    Original     		PDF IRDC3841 IR3841 MPO104-1R0IR EEV-FK1E331P GRM1885C1H222JA01D MMBT3904-TP

    Untitled

    Abstract: No abstract text available
    Text: IRDC3841W SupIRBuck TM USER GUIDE FOR IR3841W EVALUATION BOARD DESCRIPTION The IR3841W is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mmx6mm Power QFN package. An output over-current protection function is


    Original     		PDF IRDC3841W IR3841W IR3841W

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23 Features • • • • • • Low Gate Voltage Threshold Vgs(th to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate


    Original     		PDF OT-23 AEC-Q101 LNTR4003NLT1G S-LNTR4003NLT1G

    LNTR4003NLT1G

    Abstract: marking tr8 sot-23 lntr4003 LNTR4003NLT1
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23 LNTR4003NLT1G Features • • • • • 3 Low Gate Voltage Threshold Vgs(th to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching


    Original     		PDF OT-23 LNTR4003NLT1G LNTR4003NLT1G marking tr8 sot-23 lntr4003 LNTR4003NLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT-23 LNTR4003NLT1G Features • • • • • 3 Low Gate Voltage Threshold Vgs(th to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching


    Original     		PDF OT-23 LNTR4003NLT1G

    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


    Original     		PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    LDTC144EE

    Abstract: LDTC114EE
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144EET1 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LDTC144EET1 SC-89 LDTC144EE LDTC114EE

    BC817

    Abstract: BC817-16 BC817-25 BC817-40 EB-500
    Text: DATA SHEET BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 300 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF BC817 500mA 2002/95/EC OT-23, BC817-16 MIL-STD-750, BC817-25 BC817-40 BC817-16 BC817-25 BC817-40 EB-500

    SOT-416

    Abstract: sot416 SOT416 on sot 23 marking code 8a DTC114EET1 DTC114EET1G DTC114YET1 SC-75/SOT-416 DTC124EET1 DTC124EET1G
    Text: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF DTC114EET1 SC-75/SOT-416 SC-75/SOT-416 SOT-416 sot416 SOT416 on sot 23 marking code 8a DTC114EET1G DTC114YET1 DTC124EET1 DTC124EET1G

    Zener sot marking 162

    Abstract: marking 8D SOT 89 marking 81t marking 81J
    Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232


    OCR Scan     		PDF 300mW) MMBZ5225 MMBZS267 TD-236AB OT-23) Zener sot marking 162 marking 8D SOT 89 marking 81t marking 81J

    MMBZ5228B

    Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
    Text: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)


    OCR Scan     		PDF MMBZ52 350mW MMBZ5226B TMPZ5226B MMBZ5227B TMPZ5227B MMBZ5228B TMPZ5228B MMBZ5229B TMPZ5229B TMPZ5234B MMBZ5230B TMPZ5230B MMBZ5232B