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    8A SF Search Results

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    8A SF Price and Stock

    Micron Technology Inc MTA18ASF4G72HZ-3G2F1

    MODULE DDR4 SDRAM 32GB 260SODIMM
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    DigiKey MTA18ASF4G72HZ-3G2F1 Tray 100 1
    • 1 $249.5
    • 10 $221.349
    • 100 $205.882
    • 1000 $205.882
    • 10000 $205.882
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    Avnet Americas MTA18ASF4G72HZ-3G2F1 Tray 18 Weeks 100
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    • 100 $213
    • 1000 $192
    • 10000 $186
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    Mouser Electronics MTA18ASF4G72HZ-3G2F1 145
    • 1 $220.29
    • 10 $216.95
    • 100 $208.05
    • 1000 $208.05
    • 10000 $208.05
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    Newark MTA18ASF4G72HZ-3G2F1 Bulk 94 1
    • 1 $229.1
    • 10 $225.63
    • 100 $216.35
    • 1000 $216.35
    • 10000 $216.35
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    Avnet Asia MTA18ASF4G72HZ-3G2F1 12 Weeks 100
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    • 100 $171.05263
    • 1000 $160.49384
    • 10000 $152.94118
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    Avnet Silica MTA18ASF4G72HZ-3G2F1 23 Weeks 100
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    New Advantage Corporation MTA18ASF4G72HZ-3G2F1 4 1
    • 1 $314.2
    • 10 $314.2
    • 100 $314.2
    • 1000 $314.2
    • 10000 $314.2
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    JRH Electronics 806-025-07Z110-8ASF

    Circular connector
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    DigiKey 806-025-07Z110-8ASF 98 1
    • 1 $7345.64
    • 10 $6757.992
    • 100 $6464.166
    • 1000 $6464.166
    • 10000 $6464.166
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    JRH Electronics 806-025-13ZL10-8ASF

    Circular connector
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    DigiKey 806-025-13ZL10-8ASF 98 1
    • 1 $4301.19
    • 10 $3925.91
    • 100 $3871.069
    • 1000 $3871.069
    • 10000 $3871.069
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    Micron Technology Inc MTA18ASF4G72PDZ-3G2F1

    MODULE DDR4 SDRAM 32GB 288RDIMM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTA18ASF4G72PDZ-3G2F1 Tray 98 1
    • 1 $233.42
    • 10 $203.369
    • 100 $197.3595
    • 1000 $197.3595
    • 10000 $197.3595
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    Newark MTA18ASF4G72PDZ-3G2F1 Bulk 6 1
    • 1 $108.34
    • 10 $108.34
    • 100 $108.34
    • 1000 $108.34
    • 10000 $108.34
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    Avnet Asia MTA18ASF4G72PDZ-3G2F1 12 Weeks 100
    • 1 -
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    • 100 $137.27632
    • 1000 $128.80247
    • 10000 $122.74118
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    Avnet Silica MTA18ASF4G72PDZ-3G2F1 15 Weeks 100
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    JRH Electronics 806-021-MT10-8ASF

    Circular connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 806-021-MT10-8ASF 97 1
    • 1 $1508.37
    • 10 $1387.696
    • 100 $1327.3612
    • 1000 $1327.3612
    • 10000 $1327.3612
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    Find more 8A SF price and stock on Findchips.com

    8A SF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group M32C/8A SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER 1. REJ03B0213-0100 Rev.1.00 Apr 01, 2007 Overview 1.1 Features The M32C/8A Group (M32C/8A) is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group (M32C/8A) is housed in 100pin plastic molded LQFP package.


    Original     		PDF M32C/8A M32C/8A) 16/32-BIT REJ03B0213-0100 M32C/80 100pin

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


    Original     		PDF M32C/8A REJ03B0213-0111 M32C/80 144-pin 100-pin 16-Mbyte

    M308A0SGP

    Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
    Text: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


    Original     		PDF M32C/8A REJ03B0213-0110 M32C/80 144-pin 100-pin 16-Mbyte M308A0SGP TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U

    M308A0SGP

    Abstract: M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A
    Text: APPLICATION NOTE M32C/8A Group Program Download Function 1. Abstract This document describes methods of downloading a user program into the internal RAM area in M32C/8A using the program download function and executing the downloaded user program in internal RAM.


    Original     		PDF M32C/8A M308A0SGP M308A3SGP M308A5SGP PLQP0100KB-A 100P6Q-A) PLQP0144KA-A M308A0SGP M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A

    f8gz47

    Abstract: F8JZ47 SF8JZ47 SF8GZ47
    Text: SF8GZ47, SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47, SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V, 600V : VRRM = 400V, 600V Average On−State Current : IT AV = 8A


    Original     		PDF SF8GZ47, SF8JZ47 SF8GZ47 f8gz47 F8JZ47 SF8JZ47 SF8GZ47

    marking code 8A

    Abstract: SF8A400H
    Text: SF8A400H Ultrafast Recovery Rectifier 400V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode


    Original     		PDF SF8A400H O-220F-2L SF8A400H KSD-D6A011-001 marking code 8A

    freewheeling diode application note

    Abstract: SF8A600H
    Text: SF8A600H Ultrafast Recovery Rectifier 600V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode


    Original     		PDF SF8A600H O-220F-2L SF8A600H KSD-D0Q025-001 freewheeling diode application note

    SF8j41

    Abstract: SF8G41 SF8G41A SF8J41A
    Text: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 8A


    Original     		PDF SF8G41A SF8J41A SF8G41A SF8j41 SF8G41 SF8J41A

    SF8G41A

    Abstract: SF8J41A
    Text: SF8G41A, SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A, SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 8A


    Original     		PDF SF8G41A, SF8J41A SF8G41A SF8G41A SF8J41A

    F8JZ47

    Abstract: f8gz47 f8gz47 symbol SF8JZ47 SF8GZ47
    Text: SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 8A


    Original     		PDF SF8GZ47 SF8JZ47 SF8GZ47 400transportation F8JZ47 f8gz47 f8gz47 symbol SF8JZ47

    TOSHIBA Thyristor

    Abstract: SF8G48 SF8J48 USF8G48 USF8J48
    Text: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48,SF8J48,USF8G48,USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM=400,600V Repetitive Peak Reverse Voltage : VRRM=400,600V Average On-State Current : IT AV =8A


    Original     		PDF SF8G48 SF8J48 USF8G48 USF8J48 SF8G48 SF8J48 TOSHIBA Thyristor USF8J48

    SF8L60

    Abstract: No abstract text available
    Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting


    Original     		PDF SF8L60 FTO-220 trr70ns SF8L60

    TOSHIBA Thyristor

    Abstract: SF8G48 SF8J48 USF8G48 USF8J48
    Text: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage: VDRM=400V,600V Repetitive Peak Reverse Voltage: VRRM=400V,600V Average On-State Current: IT AV =8A


    Original     		PDF SF8G48 SF8J48 USF8G48 USF8J48 SF8G48, SF8J48, USF8G48, SF8J48 TOSHIBA Thyristor USF8J48

    SF8L60

    Abstract: No abstract text available
    Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting


    Original     		PDF SF8L60 FTO-220 trr70ns TorqL60 SF8L60

    Untitled

    Abstract: No abstract text available
    Text: 128M Synchronous DRAM SDRAM Rev. 0.60E Oct. '98 Prelim inary MITSUBISHI LSIs 1 M2V28S20TP-7,-8A,-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 (4-BANK X 8,388,608-W O RDX 4-BIT) (4-BANK X 4,194,304-W O RDX (4 -b a n k x 2 ,097,1 5 2 - w o r d x 8-BIT)


    OCR Scan     		PDF M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 M2V28S20TP 608-word M2V28S30TP 304-word M2V28S40TP 152-word 16-bit.

    Untitled

    Abstract: No abstract text available
    Text: ALPHA SEMICONDUCTOR 1Accllcncc in Analog Power Products AS2880 8A Low DropOut Voltage Regulator Adjustable &Fixed 3.3V FEATURES • • • • • • • Adjustable Output Down to 1.2V or Fixed 3.3V Output Current of 8A Low Dropout Voltage Extremely Tight Load and Line Regulation


    OCR Scan     		PDF AS2880 O-220 LT1083/LT1584 Inte1468

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir

    irf840

    Abstract: IRF841
    Text: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF840, IRF841, IRF842, IRF843 irf840 IRF841

    IRF521

    Abstract: IRF520 irf523 F521 irf522
    Text: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF520, IRF521, IRF522, IRF523 TA09594 RF521, IRF521 IRF520 irf523 F521 irf522

    irf440

    Abstract: No abstract text available
    Text: h a IRF440, IRF441, //ÎF 4 4 2 IRF443 r r i s semi conduct or 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF440, IRF441, IRF443 irf440

    Untitled

    Abstract: No abstract text available
    Text: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT)


    OCR Scan     		PDF M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD 16-BIT) 2V28S20TP M2V28S30TP

    B47PP

    Abstract: 6F20 8A SF
    Text: Diodes Internationa! IQ R Rectifier VfM @ JtX Part Number VRR* V >FAV@t C (A) (C) IfSM 'F(AV) 50 Hi (V) (A) 60Hz RQK(DC) (A) (°C/W) Notes Fax on Demand Number Cose Outline Key Standard Recovery B-47PP 8A F05N PP 8A F1N PP 50 50 150 1.45 600 628 0.6 100


    OCR Scan     		PDF B-47PP 200X6 200K6 200X0 DO-203AA 6F120 202Uf* 2O20f2u2Uf' 200S-1 200X4 B47PP 6F20 8A SF

    4052C

    Abstract: 3062C 4102Z 1042c 8A3021 sot-89+Marking+8A
    Text: 8A RoHS*tJ£nap Standard Toggle Switch • « « - - ■ F e a tu re s - aAZ$>?-Fh7J\sZ'ry3Llisfä'Mt “8 ” v'J-XcD+T'


    OCR Scan     		PDF 1011--Z 1011C 1021--Z 1041C 1051--Z 1051C 4052C 3062C 4102Z 1042c 8A3021 sot-89+Marking+8A

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,


    OCR Scan     		PDF RFD8P06LESM, RFP8P06LE 0-300i2 1-800-4-HARRIS