Untitled
Abstract: No abstract text available
Text: :87-2 :;9: @?E7A <4C5:;>9 A7<4F 8JGUVSJT [ M[n]bcha l_f[s [ 877D mqcn]bcha ][j[\cfcns [n S_m5fi[^ [ D]]il^cha ni nb_ `[ofn ]oll_hn [h^ _f_]nlc][f fc`_ n_mn i` LHF =97<<4:8A VF83 VF93 VF: 0jf_[m_ m_ \_fiq n[\f_ [h^ hin_m91 [ DF4pifn[a_ ^lcpcha cm `_[mc\f_
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Usj5A75
877D1
77WD69
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Untitled
Abstract: No abstract text available
Text: <:9/. @=A=5FGD9 <=;< CBI9D ?5F7<=A; D9?5J :NKZ[XNY b N\o^cdib m`g\t b 897D nrdo^cdib ^\k\]dgdot \o T`n5gj\_ b D^^jm_dib oj oc` a\pgo ^pmm`io \i_ `g`^omd^\g gda` o`no ja LHF =97<<4:8A WF83 WF93 WF: 0kg`\n` n`` ]`gjr o\]g` \i_ ijo`n91 b K`\qt gj\_ pk oj :59;fXD
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7BAF57F
Vtk5A75
877D1
XDF69
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Untitled
Abstract: No abstract text available
Text: SK 25 KQ SEMITOP 1 Antiparallel Thyristor Module SK 25 KQ Preliminary Data Features ! " # $ %&'' " " $
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1-452MN
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sk 25
Abstract: No abstract text available
Text: SK 25 KQ SEMITOP 1 Antiparallel Thyristor Module SK 25 KQ Preliminary Data Features ! " # $ %&'' " " $
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Untitled
Abstract: No abstract text available
Text: SK 25 KQ SEMITOP 1 314 (334+ ( 34 5341 6 07 8 8 ( 7'' %.'' ( 9'' %0'' 2 6 9/ : 1; 0/ ;< '9 1; 0/ ;< %0 %='' %&'' 1; 0/ ;< %& Symbol Conditions Values Units 5341 >% ? , %9': ? 2 6 %'': 0' 8 >% ? , %9': ? 2 6 9/: 07 8 2"@ 6 0/ : ? %'
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1-452MN
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Untitled
Abstract: No abstract text available
Text: SK 25 KQ SEMITOP 1 314 (334+ ( 34 5341 6 07 8 8 ( 7'' %.'' ( 9'' %0'' 2 6 9/ : 1; 0/ ;< '9 1; 0/ ;< %0 %='' %&'' 1; 0/ ;< %& Symbol Conditions Values Units 5341 >% ? , %9': ? 2 6 %'': 0' 8 >% ? , %9': ? 2 6 9/: 07 8 2"@ 6 0/ : ? %'
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Untitled
Abstract: No abstract text available
Text: SK 70 KQ SEMITOP 1 Antiparallel Thyristor Module SK 70 KQ Preliminary Data Features ! " # $ %&'' " " $
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Untitled
Abstract: No abstract text available
Text: SK 70 KQ SEMITOP 1 314 (334+ ( 34 5341 6 70 8 8 ( ;'' %.'' ( 9'' %0'' 2 6 9/ : 1< 7' <= '9 1< 7' <= %0 %7'' %&'' 1< 7' <= %& Symbol Conditions Values Units 5341 >% ? , %9': ? 2 6 %'': /' 8 >% ? , %9': ? 2 6 9/: 70 8 %''' ;''
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Untitled
Abstract: No abstract text available
Text: SK 70 KQ SEMITOP 1 314 (334+ ( 34 5341 6 70 8 8 ( ;'' %.'' ( 9'' %0'' 2 6 9/ : 1< 7' <= '9 1< 7' <= %0 %7'' %&'' 1< 7' <= %& Symbol Conditions Values Units 5341 >% ? , %9': ? 2 6 %'': /' 8 >% ? , %9': ? 2 6 9/: 70 8 %''' ;''
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Semikron Semitop sk 70 kq
Abstract: No abstract text available
Text: SK 70 KQ SEMITOP 1 Antiparallel Thyristor Module SK 70 KQ Preliminary Data Features ! " # $ %&'' " " $
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Untitled
Abstract: No abstract text available
Text: SK 70 KQ SEMITOP 1 Antiparallel Thyristor Module SK 70 KQ Preliminary Data Features ! " # $ %&'' " " $
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1-452MN
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Untitled
Abstract: No abstract text available
Text: SK 25 KQ power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMITOP 1 Antiparallel Thyristor Module SK 25 KQ Preliminary Data
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GES5307
Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
Text: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis
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2N5307,
GES5307,
2N5307
GES5307
92CS-42626
10-Typical
92CS-42A29
2N5308
2N5308A
GES5308
GES5308A
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2D 1002 integrated circuit
Abstract: 6 pin 2D 1002 2d 1002 6 pin LEB100
Text: EL7558BC HI6H perform ance ANAtoG integrated IntegratedAdjustable 8 Amp Synchronous Switcher cmcuns General Description Features EL7558C/EL7558AC pin-compatible Im proved tem perature and voltage ranges 8A continuous load current Precision internal 1% reference
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EL7558BC
EL7558C/EL7558AC
P55-compatible
EL7558BC
2D 1002 integrated circuit
6 pin 2D 1002
2d 1002 6 pin
LEB100
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M74LS368AP
Abstract: 20-PIN
Text: MITSUBISHI LSTTLs M 74LS368AP HEX BUS DRIVER W ITH 3-STATE OUTPUT INVERTED DESCRIPTION The M 7 4L S 36 8A P is a semiconductor integrated circuit PIN CONFIGURATION (TOP VIEW) containing 6 buffers w ith 3-state outputs and is provided w ith ou tp ut control
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M74LS368AP
M74LS368AP
16-PIN
20-PIN
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N VB024 \u HIGH VOLTAGE IGNITION COIL DRIVER POWER 1C . . . . . TYPE V CL lc Id VB024 400 V 8A 100 mA PRIMARY COIL CURRENT INTERNALLY SET PRIMARY COIL VOLTAGE INTERNALLY SET AUTOMATIC SHUT-OFF AT MAX CURRENT LOGIC LEVEL COMPATIBLE INPUT
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VB024
VB024
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Untitled
Abstract: No abstract text available
Text: 5 6 4 APPROVED: DATE:_ TITLE: D C CIRCUITS CURRENT SPECIFICATIONS: Material: 2 4-6 8-10 12-24 9A 8A 7A 6A 7A 6A 5A 5A 5A 4A 4A 4A 4A 3A 3A 3A Insulator: Nylon 66, rated UL 94V—2 Insulator color: Natural Contact: Brass, Tin plated Electrical:
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007012
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON ^ 7# K LiCTMBDG S0802xH SENSITIVE GATE SCR FEATURES • It r m s =8A ■ Vdrm =200V to 800V ■ Low Iq t < 200 piA DESCRIPTION The S0802xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
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S0802xH
200mA
S0802xH
T0220
BBJCR33UR7HOW]
12R237
GG7G12C1
007012
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N 5 7 . L6353 R iill ê lS lilL i( g 'iîlS ή ô ! ID @ i SMART DRIVER FOR POWER MOS & IGBT PRODUCT PREVIEW PEAK HIGH OUTPUT CURRENT CAPABIL ITY (+8A WIDE SUPPLY VOLTAGE RANGE (12.5 TO 18V) 0 TO -7.5V NEGATIVE BIAS VOLTAGE SUP
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L6353
100kHz
DIP16
D07fi
7T2T237
D07fi46b
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91Ah
Abstract: No abstract text available
Text: r r z SG S-THO M SO N ^7# S0802xH RfflDOœiHitSiriHiOiDOS SENSITIVE GATE SCR FEATURES • It r m s = 8A ■ V drm = 200V to 800V ■ Low Ig t < 200 jiA DESCRIPTION The S0802xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended tor general purpose
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S0802xH
S0802xH
T0220
91Ah
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74LS368AP
Abstract: No abstract text available
Text: MITSUBISHI LSTTLs M 74LS368AP H E X BUS D R IV E R W IT H 3 -S T A T E O U TPU T IN V E R T E D DESCRIPTION The M 7 4L S 36 8A P is a semiconductor integrated circuit PIN CONFIGURATION (TOP VIEW) containing 6 buffers w ith 3-state outputs and is provided
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74LS368AP
500ns,
b2LHfl27
0013Sbl
14-PIN
16-PIN
20-PIN
74LS368AP
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NJM386BM
Abstract: AH-1.25
Text: - 46 - N J IVI 3 8 6 m ifV M m î •4 ~ i z V : 8a ■ tu fi 0. 3 2 5W : 6 V / 8 Si 0 .5 W : 9 V / l 6 Q • mmi 2o e i e « - « : • mwc, R r iijiW K iîj 2 0 ~ 2 0 0 (g ■thf]t7-b-, Mtí£@»KS N J M IB V+ ^ P d ( T , = 2 5 °C) £ <a 15 V 700
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1N3064
Abstract: UA 324 cn pbl10 jb0 marking
Text: M I L - M - 3 8 5 1 0 / 3 0 8A 2 February 1982 SUPERSEDING M I L - M - 3 8 5 1 0 / 3 0 8 17 30 J a n u a r y 1976 MILITARY SPECIFIC ATIO N M I C R O C I R C U I T S , D I G I T A L , LOW-POWER SCHOTTKY T T L , A R I T H M E T I C LOGI C U NI TS / F U NCTI O N GENERATORS
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MIL-M-38510/308A
MIL-M-38510/308(
MIL-M-38510.
1N3064
UA 324 cn
pbl10
jb0 marking
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cs1m
Abstract: PD78218A 32ksii 5A10P sc75-7 UPD78214 14X14 32KS PD7821 TFK BC
Text: NEC MOS ^.07821 8A A M O S In te g ra te d C irc u it m * = r /\r x 8 t i 'y ^ ^PD 78218A (A )tì, ¡Ü , ¡ÉittìféCPU » L tz 78K/ I v U - X n m & T , /¿PD78214(A) W y ï U H T 'T o V i? □ • To //PD78218A(A) (i, 32K/'<'-f F <7)^7. ? ROM £ 1 0 2 4 ^ '^ h 60 RAM £ F*3M L T l ' Î î o
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8218A
uPD78214
//PD78218A
PD78218A
cs1m
32ksii
5A10P
sc75-7
14X14
32KS
PD7821
TFK BC
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