Untitled
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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Untitled
Abstract: No abstract text available
Text: 256Mbit MOBILE DDR SDRAM based on 2M x 4Bank x32 I/O Specification of 256Mb 8Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mbit
256Mb
8Mx32bit)
256MBit
32bits)
32bit)
H5MS2622JFR
H5MS2532JFR
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KMM5328000BSW
Abstract: No abstract text available
Text: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328000BSW/BSWG
KMM5328000BSW/BSWG
4Mx16,
KMM5328000B
8Mx32bits
KMM5328000B
4Mx16bits
72-pin
KMM5328000BSW
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Untitled
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
8Mx32bit)
111Preliminary
256Mbit
HY57V563220A
256Mbit
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Untitled
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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PDF
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256MBit
8Mx32bit)
256Mbit
32bits
166MHz
133MHz
105MHz
200us
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hy5s5b2clfp
Abstract: hy5s5b2clfp-6e
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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256MBit
8Mx32bit)
256Mbit
32bits
200us
hy5s5b2clfp
hy5s5b2clfp-6e
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KMM5328000CK
Abstract: KMM5328000CKG KMM5328100CK KMM5328100CKG
Text: KMM5328000CK/CKG KMM5328100CK/CKG DRAM MODULE KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung
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KMM5328000CK/CKG
KMM5328100CK/CKG
KMM5328100CK/CKG
KMM53280
8Mx32bits
24-pin
72-pin
KMM5328000CK
KMM5328000CKG
KMM5328100CK
KMM5328100CKG
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Untitled
Abstract: No abstract text available
Text: M53210800CW0/CB0 M53210810CW0/CB0 DRAM MODULE M53210800CW0/CB0 & M53210810CW0/CB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0C
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M53210800CW0/CB0
M53210810CW0/CB0
M53210810CW0/CB0
M5321080
8Mx32bits
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D
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M53210800DW0/DB0
M53210810DW0/DB0
M53210810DW0/DB0
M5321080
8Mx32bits
24-pin
72-pin
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DIODE SMD K7
Abstract: Socket AM2 Socket 754 "Socket 754" ah2 c49 106 39p ati sb400 VSS63 AC588 2200P-0402 SB450
Text: 5 MSI 4 3 2 1 MS-1036 Ver:0A D D DDR 333/400 AMD K8 Socket 754 GDDR3 8MX32bit*8PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS 34 C DVI DVI_A/D 34 TV OUT RGB NEW CARD PCI-E/USB PCI-E PCIE VGA ATI M26-X 26 North Bridge PCIE 12~14 ATI RX480
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MS-1036
8MX32bit
M26-X
RX480
ET1310
R5C841
1394a
SB450
ENE3910
ALC822
DIODE SMD K7
Socket AM2
Socket 754
"Socket 754"
ah2 c49 106 39p
ati sb400
VSS63
AC588
2200P-0402
SB450
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MDB35
Abstract: smd e2b L43 SMD a89 diode smd Socket AM2 Socket 754 "Socket 754" ah2 c49 106 39p ati sb400 ap c21 100u 39p
Text: 5 MSI 4 3 2 1 MS-1036 Ver:0A D D DDR 333/400 AMD K8 Socket 754 GDDR3 8MX32bit*8PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS 32 C DVI DVI_A/D 32 TV OUT RGB NEW CARD PCI-E/USB PCI-E PCIE VGA ATI M26-X 26 North Bridge PCIE 12~14 ATI RX480
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MS-1036
8MX32bit
M26-X
RX480
ET1310
OZ711MP
1394a
SB450
ENE3910
ALC822
MDB35
smd e2b
L43 SMD
a89 diode smd
Socket AM2
Socket 754
"Socket 754"
ah2 c49 106 39p
ati sb400
ap c21 100u 39p
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KMM5328004BSW
Abstract: KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
KMM5328004BSW
KMM5328004BSWG
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Untitled
Abstract: No abstract text available
Text: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D
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M53230800DW0/DB0
M53230810DW0/DB0
M5323080
8Mx32bits
24-pin
72-pin
M53230800DW0/DB0
M53230810DW0/DB0
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hy5s5b2clfp
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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256MBit
8Mx32bit)
256Mbit
32bits
110mA
Page11)
200us
hy5s5b2clfp
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H55S2622JFR
Abstract: mobile MOTHERBOARD CIRCUIT diagram 3g mobile MOTHERBOARD CIRCUIT diagram H55S2532JFR
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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256MBit
8Mx32bit)
11256Mbit
H55S2622JFR
H55S2532JFR
32bits
200us
mobile MOTHERBOARD CIRCUIT diagram
3g mobile MOTHERBOARD CIRCUIT diagram
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Untitled
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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256Mb
8Mx32bit)
111Preliminary
256Mbit
HY5V52A
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HY5V52AFP
Abstract: HY5V52AFP-h HY5V52ALFP HY5V52A
Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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PDF
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256Mb
8Mx32bit)
256Mbit
HY5V52A
HY5V52AFP
HY5V52AFP-h
HY5V52ALFP
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Untitled
Abstract: No abstract text available
Text: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D
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M53230800DW0/DB0
M53230810DW0/DB0
M53230810DW0/DB0
M5323080
8Mx32bits
24-pin
72-pin
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capacitor taa
Abstract: KMM5328004BSW KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
capacitor taa
KMM5328004BSW
KMM5328004BSWG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M332V804AS/AZ-L KMM332V804AS/AZ-L Fast Page Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V804A
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OCR Scan
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PDF
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M332V804AS/AZ-L
KMM332V804AS/AZ-L
4MX16,
KMM332V804A
8Mx32bits
4Mx16bits
72-pin
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Untitled
Abstract: No abstract text available
Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification
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OCR Scan
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PDF
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KMM53280
8Mx32bits
KMM5328000CK/CKG
KMM53281OOCK/CKG
KMM5328000CK/CKG
KMM53281
5328000CK
cycles/64ms
KMM5328000CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A
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OCR Scan
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PDF
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KMM332F804AS/AZ-L
KMM332F804AS/AZ-L
4MX16,
KMM332F804A
8Mx32bits
4Mx16bits
72-pin
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thermik sensor
Abstract: a17s JC814 MS-1036 C94S TFK U108 aks ti 79 JC878 TFK 148 RB551
Text: A » 1 0 3 6 V e r : 0 A ÙÙ B 3 3 3 /4 0 0 AMÒ K8 Socket 754 Clock Generator 6ÙÙR3 8MX32bit*8PCS 1 5 -1 6 H T D Ù R S O Ù IM M *2 \7 P C IE NEW CARO PCI-E/USB PCI-E 26 North Bridge A JIR X 480 LAN ET13Î0 p c ie 30 9~11 OZ7ÎÎMP CARÙBUS CARÙREAÙER
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OCR Scan
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PDF
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8MX32bit
1394a
LM4871
MS-1036
r2E6d110
r256d110
r256d110
Bj256d110
56d110
or256d110
thermik sensor
a17s
JC814
MS-1036
C94S
TFK U108
aks ti 79
JC878
TFK 148
RB551
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M332V404AS/AZ-L KMM332V404AS/AZ-L Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V404A
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OCR Scan
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PDF
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M332V404AS/AZ-L
KMM332V404AS/AZ-L
4MX16,
KMM332V404A
8Mx32bits
4Mx16bits
72-pin
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