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    Untitled

    Abstract: No abstract text available
    Text: 123452676 89ABCDEFEED598 123456789A6BC3DEF7989A63A38E311 E31139F3B3FE6FA33A3965789E3A9 98!3BC97B89A6F3B637B63"E35FE3#983B3 


    Original     		PDF 89ABCDEF 123456789A6BC3DEF7 89A63A 139F3B3FE6FA C97B89A6F3B6 37B63 E35FE A683E6 E8E789A63CA F3968E$

    Untitled

    Abstract: No abstract text available
    Text: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD  4C45E57457DC7  234C25D C4E4E  ! " #F56$9 6$9 952%  17E &4C3 F 6'53 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24  #2734544 2B2C2,4


    Original     		PDF 123415678429ABCD58 89ABCDEFD 2D5565 C959C 55DB9A 91ADF9

    Untitled

    Abstract: No abstract text available
    Text: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD  4C45E57457DC7  234C25D C4E4E  ! " #F59$ 9$ $%52&  17E '4C3 F %$53 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24  #2734544 2B2C2,4 13


    Original     		PDF 123415678429ABCD58 89ABCDEFD 9A68E

    B169D

    Abstract: No abstract text available
    Text: 1234567894ABCDEF69 1234567894ABCDEF69 1234567 89ABCDEFD  4C457457DC7  234C25DC4E4E F56!" 6!" 6"" ##52$    17E %4C3F5&'3 A48  7CD45*4DCCBC54B4F565  A7 * 7#+C24 4 x × 2DC9F8F  ,+42C354#+4245234F5-" ./6""


    Original     		PDF 1234567894ABCDEF69 89ABCDEFD 4F591 55165D4 B169D

    Untitled

    Abstract: No abstract text available
    Text: 123415678429ABCD58 123415678429ABCD58 12345467 89ABCDEFD  4C45E57457DC7  234C25DC4E4E ! "F569 69 6#$52%   17E &4C3F 93'A48  7CD45 4DCCBC5 4B4F565  A7") 7*C24 13 x × DC9F8F


    Original     		PDF 123415678429ABCD58 89ABCDEFD 2D5543 A4BCD4EF59

    Untitled

    Abstract: No abstract text available
    Text: 123415678429ABCD58 123415678429ABCD58 12345667 89ABCDEFD  4C45E57457DC7  234C25DC4E4E ! "F5## ## 6$#52%   17E &4C3F 6' 3 A48*  7CD45+4DCCBC5 4B4F565  A7"+ 7,C24 13 x × DC9F8F


    Original     		PDF 123415678429ABCD58 89ABCDEFD E5785 4D454

    Thermistor Semitec 104 JT

    Abstract: BN35-3H103FB-50 coulomb counter
    Text: bq34z100 www.ti.com SLUSAU1 – MAY 2012 Wide Range Fuel Gauge with Impedance Track Technology Check for Samples: bq34z100 FEATURES • • • • 1 2 • • • • • • Supports Li-Ion and LiFePO4 Chemistries Capacity Estimation Using Patented Impedance Track™ Technology for Batteries


    Original     		PDF bq34z100 Thermistor Semitec 104 JT BN35-3H103FB-50 coulomb counter

    3H103

    Abstract: 0x0161 XLED
    Text: bq34z100 www.ti.com SLUSAU1 – MAY 2012 Wide Range Fuel Gauge with Impedance Track Technology Check for Samples: bq34z100 FEATURES • • • • 1 2 • • • • • • Supports Li-Ion and LiFePO4 Chemistries Capacity Estimation Using Patented Impedance Track™ Technology for Batteries


    Original     		PDF bq34z100 3H103 0x0161 XLED

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original     		PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    Untitled

    Abstract: No abstract text available
    Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07


    Original     		PDF HYB18M256320CFX HYE18M256320CFX 256-Mbit 18M256320CFX

    MT46H64M16

    Abstract: 6S55 MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074 MT46H64M16 6S55 MT46H64M16LF

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features


    Original     		PDF 512Mb: MT48H32M16LF­ MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11464-1E MB81EDS516445 MB81EDS516445 64-bit

    atmel rfid reader schematic

    Abstract: FDX-B 11785 crc 125 kHz RFID tag tag SWITCH A233 ATA5558 CRC-16 11785 fdx-b schematic diagram of active rfid tag
    Text: Features • • • • • • • • • Contactless Read/Write Data Transmission Radio Frequency fRF: 100 kHz to 200 kHz User Memory 1024 Bits : 32 Write Protectable 32-bit Blocks of Data Deterministic Anticollision: Detection Rate ~ 20 Tags/s with 40-bit Tag ID, RF/32


    Original     		PDF 32-bit 40-bit RF/32 16-bit 4681C atmel rfid reader schematic FDX-B 11785 crc 125 kHz RFID tag tag SWITCH A233 ATA5558 CRC-16 11785 fdx-b schematic diagram of active rfid tag

    MT46H128M16

    Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball

    circuit diagram of ddr ram

    Abstract: HYB18M1G320BF
    Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00


    Original     		PDF HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram

    atmega128 usart code bootloader example

    Abstract: M8515 ATMEL m8515 What is SPM and LPM atmega128 bootloader M8535 ATMEL M8535 music generate ATMEL M162 atmega128 USART C code examples
    Text: AVR230: DES Bootloader Features • Fits All AVR Microcontrollers with Bootloader Capabilities • Enables Secure Transfer of Compiled Software or Sensitive Data to Any AVR with Bootloader Capabilities 8-bit Microcontroller • Includes Easy To Use, Configurable Example Applications


    Original     		PDF AVR230: ATmega128 16-KB 2541D atmega128 usart code bootloader example M8515 ATMEL m8515 What is SPM and LPM atmega128 bootloader M8535 ATMEL M8535 music generate ATMEL M162 atmega128 USART C code examples

    power generation POWER COMMAND Hmi 211

    Abstract: beijer hmi cables beijer E600 GT10-C30R4-8P pin configuration beijer hmi programming cable pin diagram GT01-C30R4-8P Communication cable pin diagram mitsubishi cab5 pin out GT01-C30R2-9S GT01-C30R4-8P beijer E700
    Text: MITSUBISHI ELECTRIC Global partner. Local friend. FACTORY AUTOMATION HMI Visualisation Tools EUROPEAN BRANCHES EUROPEAN REPRESENTATIVES MITSUBISHI ELECTRIC EUROPE B.V. FRANCE 25,Boulevard des Bouvets F-92741 Nanterre Cedex Phone +33 0 1 / 55 68 55 68 MITSUBISHI ELECTRIC EUROPE B.V.


    Original     		PDF F-92741 D-40880 I-20041 E-08190 UA-02002 ZA-1600 07075-A power generation POWER COMMAND Hmi 211 beijer hmi cables beijer E600 GT10-C30R4-8P pin configuration beijer hmi programming cable pin diagram GT01-C30R4-8P Communication cable pin diagram mitsubishi cab5 pin out GT01-C30R2-9S GT01-C30R4-8P beijer E700

    Q61P-A2

    Abstract: Q38B QX80 mitsubishi qy80 Q312B-E Q61P QJ71C24N-R4 q32cbl-3m QJ71BR11 Q38B-E
    Text: MITSUBISHI ELECTRIC Programmable Logic Controllers MELSEC System Q Technical Catalogue 2004 The MELSEC System Q CPU Modules New Items 2004 Two new high-performance process modules have been added to the existing range of PLC CPU modules, the Q12 P HCPU and Q25(P)HCPU.


    Original     		PDF Q00CPU Q01CPU QX82-S1, Q64RD-G Ni100 QJ71C24N QJ71C24N-R2 136731-F, IL-42160 D-40880 Q61P-A2 Q38B QX80 mitsubishi qy80 Q312B-E Q61P QJ71C24N-R4 q32cbl-3m QJ71BR11 Q38B-E

    ELPIDA lpddr

    Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling

    Untitled

    Abstract: No abstract text available
    Text: ORCA ORLI10G Quad 2.5Gbps, 10Gbps Quad 3.125Gbps, 12.5Gbps Line Interface FPSC August 2004 Data Sheet Introduction The Lattice ORCA Series 4-based ORLI10G FPSC combines a high-speed line interface with a flexible FPGA logic core. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORLI10G consists


    Original     		PDF ORLI10G 10Gbps 125Gbps, ORLI10G OIF-SFI4-01 16-bit ORLI10G-2BMN680I

    Transistor BC 1078

    Abstract: TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN
    Text: TSS400-S1 uPOWER PROGRAMMABLE HIGH-PRECISION SENSOR SIGNAL PROCESSOR SLMS001 -D 407 1, JANUARY 1993 * Onboard Ratiometric Current Source Programmable From 0.15 mA x SV^d/V to 2.4 mA x (SVDD/V) Two Independent Crystal Controlled Timers (32.768 kHz) Internal MOS Oscillator Serves as System


    OCR Scan     		PDF TSS400-S1 SLMS001 -D4071, 12-Bit 56-Segment TSS400 TSS400-S1) D4071, D100Q75 Transistor BC 1078 TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN