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    8904E Search Results

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    8904E Price and Stock

    Diodes Incorporated PAM8904EGPR

    IC PIEZO SOUNDER DRVR 12QFN
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    DigiKey PAM8904EGPR Cut Tape 6,736 1
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    PAM8904EGPR Reel 6,000 3,000
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    PAM8904EGPR Digi-Reel 1
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    Avnet Americas PAM8904EGPR Reel 8 Weeks 3,000
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    Mouser Electronics PAM8904EGPR 3,459
    • 1 $0.8
    • 10 $0.658
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    Newark PAM8904EGPR Cut Tape 3,217 1
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    TME PAM8904EGPR 1
    • 1 $0.776
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    • 100 $0.491
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    Avnet Asia PAM8904EGPR 8 Weeks 3,000
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    Avnet Silica PAM8904EGPR 9,000 10 Weeks 3,000
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    New Advantage Corporation PAM8904EGPR 6,000 1
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    Win Source Electronics PAM8904EGPR 68,800
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    Diodes Incorporated PAM8904EJER

    IC PIEZO SOUNDER DRVR 16UQFN
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    DigiKey PAM8904EJER Reel 3,000 3,000
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    PAM8904EJER Cut Tape 1,595 1
    • 1 $0.87
    • 10 $0.77
    • 100 $0.5903
    • 1000 $0.3733
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    PAM8904EJER Digi-Reel 1
    • 1 $0.87
    • 10 $0.77
    • 100 $0.5903
    • 1000 $0.3733
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    Avnet Americas PAM8904EJER Reel 3,000 8 Weeks 3,000
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    Mouser Electronics PAM8904EJER 9,766
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    • 100 $0.548
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    Newark PAM8904EJER Cut Tape 1
    • 1 $0.981
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    • 100 $0.646
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    TME PAM8904EJER 1
    • 1 $0.839
    • 10 $0.711
    • 100 $0.549
    • 1000 $0.449
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    Avnet Asia PAM8904EJER 8 Weeks 3,000
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    Avnet Silica PAM8904EJER 3,000 10 Weeks 3,000
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    New Advantage Corporation PAM8904EJER 3,000 1
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    Diodes Incorporated PAM8904EGPR-T

    AUDIO HIGH VOLT U-QFN2020-12 T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PAM8904EGPR-T Cut Tape 940 1
    • 1 $0.8
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    • 100 $0.5366
    • 1000 $0.33936
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    PAM8904EGPR-T Reel 3,000
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    PAM8904EGPR-T Digi-Reel 1
    • 1 $0.8
    • 10 $0.7
    • 100 $0.5366
    • 1000 $0.33936
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    Avnet Americas PAM8904EGPR-T Reel 28 Weeks 3,000
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    Mouser Electronics PAM8904EGPR-T
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    Diodes Incorporated PAM8904EJPR

    IC PIEZO SOUNDER DRVR 12UQFN
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    DigiKey PAM8904EJPR Cut Tape
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    PAM8904EJPR Digi-Reel
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    Avnet Americas PAM8904EJPR Reel 28 Weeks 3,000
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    • 10000 $0.32629
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    Mouser Electronics PAM8904EJPR 5,645
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    Newark PAM8904EJPR Cut Tape 1
    • 1 $0.67
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    TME PAM8904EJPR 1
    • 1 $0.788
    • 10 $0.647
    • 100 $0.514
    • 1000 $0.48
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    Chip 1 Exchange PAM8904EJPR 6,507
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    Avnet Silica PAM8904EJPR 30 Weeks 3,000
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    Cirrus Logic WM8904ECS/R

    IC CODEC STEREO ULP 36WCSP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WM8904ECS/R Digi-Reel 1
    • 1 $6.01
    • 10 $5.429
    • 100 $4.4945
    • 1000 $3.40875
    • 10000 $3.40875
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    Mouser Electronics WM8904ECS/R
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    Avnet Silica WM8904ECS/R 22 Weeks 3,500
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    Find more 8904E price and stock on Findchips.com

    8904E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: L0,>:F6BC2<0 >@ED03F070CF-4 L0 >@ED0+B2>C:6>D0'B?D64D65 L0C0062B0.2BB2>DI L0:890 E2<:DI06C:8> L0'62;0'?G6B02@23:<:DI  <0%5/)70)+1)276020F440-&#39;%7-326 24D?BI0ED?=2D:?> 1.*0*6B:6C +6CD020$62CEB6=6>D *:>8<60&ED@ED0#?G0?CD6 .?B<5G:560,C6 #:89D0 >5ECDB:2<


    Original     		PDF F070C D64D65 L0C0062B0 276020F440-' 6CD020 62CEB6 46CC0 6CD60 2D650 6CD60

    Si8904EDB

    Abstract: No abstract text available
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 18-Jul-08

    J-STD-020A

    Abstract: Si8904EDB
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E P/N340 S-50066--Rev. 17-Jan-05 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Mys 99 178

    Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
    Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B


    Original     		PDF AA994896G 2A-M18KS08-WP-C1 1234C 11PFA 14PFA 1001D VAP21001C VAP21004H VAP21015C 2001G Mys 99 178 MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102

    Untitled

    Abstract: No abstract text available
    Text: L0,?:F6BC2=0!?AED03F070CF-4 L @G6B024D@B0@BB64D650 L CAA10(62<0(@G6B042A23:=:DI0@?0CE-0@EDAED L C0062B0.2BB2?DI L !?5:F:5E2=0@EDAED025;ECD>6?D '90#2,'40' .'/43010D11-*%#4*0/3 24D@BI0ED@>2D:@? (B:?D6B02?50%@D@B0B:F6C #:@C<C 1.7(0*6B:6C BAA.0D@0EEA.


    Original     		PDF AED03 F070C BB64D650 CAA10 G6B042A23: C0062B0 EDAED025 /43010D11-* D6B02 62DEB6C02

    Untitled

    Abstract: No abstract text available
    Text: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C


    Original     		PDF BB64D650 L0DBB10 G6B042 L0D0062B0 6CC0D92 28604EBB6 6CD020 62CEB6 46CC0 6CD70

    Untitled

    Abstract: No abstract text available
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 8904E Si8904EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 8904E Si8904EDB-T2-E1 11-Mar-11

    S5006

    Abstract: J-STD-020A Si8904EDB
    Text: 8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 08-Apr-05 S5006 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 8904EDB New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 8904E 63Sn/37Pb S-40934--Rev. 17-May-04

    CSL-870

    Abstract: No abstract text available
    Text: Device Bright Red H Orange (E) Amber (A) Yellow (Y) Green (G) Package Xp = 695 nm Xp = 635 nm Xp = 610 nm Xp = 590 nm Xp = 570 nm Outline Lamp P/N Lamp P/N Lamp P/N Lamp P/N Lamp P/N C SL-H 8807H 7 C SL-H 8807E7 CSL-H 8807A7 CSL-H 8807Y7 C SL-H 8807G 7 Device


    OCR Scan     		PDF 8807H 8807E7 8807A7 8807Y7 8807G CSL-H8808H8 CSL-H8808E8 8808A8 CSL-H8808Y8 CSL-H8808G8 CSL-870